Citation: Le. Larson, HIGH-SPEED SI SIGE TECHNOLOGY FOR NEXT-GENERATION WIRELESS SYSTEM APPLICATIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1541-1548
Citation: Le. Larson, RADIO-FREQUENCY INTEGRATED-CIRCUIT TECHNOLOGY FOR LOW-POWER WIRELESS COMMUNICATIONS, IEEE personal communications, 5(3), 1998, pp. 11-19
Citation: Le. Larson, INTEGRATED-CIRCUIT TECHNOLOGY OPTIONS FOR RFICS - PRESENT STATUS AND FUTURE-DIRECTIONS, IEEE journal of solid-state circuits, 33(3), 1998, pp. 387-399
Citation: Le. Larson, LATEX ALLERGY - HOW A PROTECTIVE MATERIAL THREATENS SOME OF ITS USERS(VOL 29, PG 278, 1998), Laboratory medicine, 29(6), 1998, pp. 330-330
Authors:
BAINES KH
MICKELSON ME
LARSON LE
FERGUSON DW
Citation: Kh. Baines et al., THE ABUNDANCES OF METHANE AND ORTHO PARA HYDROGEN ON URANUS AND NEPTUNE - IMPLICATIONS OF NEW LABORATORY 4-0 H-2 QUADRUPOLE LINE PARAMETERS/, Icarus, 114(2), 1995, pp. 328-340
Authors:
ROSENBAUM SE
KORMANYOS BK
JELLOIAN LM
MATLOUBIAN M
BROWN AS
LARSON LE
NGUYEN LD
THOMPSON MA
KATEHI LPB
REBEIZ GM
Citation: Se. Rosenbaum et al., 155-GHZ AND 213-GHZ ALINAS GAINAS/INP HEMT MMIC OSCILLATORS/, IEEE transactions on microwave theory and techniques, 43(4), 1995, pp. 927-932
Citation: K. Kaviani et al., REALIZATION OF DOPED-CHANNEL MISFETS WITH HIGH BREAKDOWN VOLTAGE IN ALGAAS INGAAS BASED MATERIAL SYSTEM/, Electronics Letters, 30(8), 1994, pp. 669-670
Authors:
FERGUSON DW
RAO KN
MICKELSON ME
LARSON LE
Citation: Dw. Ferguson et al., AN EXPERIMENTAL-STUDY OF THE 4-0 AND 5-0 QUADRUPOLE VIBRATION-ROTATION BANDS OF H-2 IN THE VISIBLE, Journal of molecular spectroscopy, 160(2), 1993, pp. 315-325
Authors:
MATLOUBIAN M
JELLOIAN LM
BROWN AS
NGUYEN LD
LARSON LE
DELANEY MJ
THOMPSON MA
RHODES RA
PENCE JE
Citation: M. Matloubian et al., V-BAND HIGH-EFFICIENCY HIGH-POWER ALINAS GAINAS/INP HEMTS/, IEEE transactions on microwave theory and techniques, 41(12), 1993, pp. 2206-2210
Authors:
BROWN JJ
BROWN AS
ROSENBAUM SE
SCHMITZ AS
MATLOUBIAN M
LARSON LE
MELENDES MA
THOMPSON MA
Citation: Jj. Brown et al., IIIA-3 STUDY OF THE DEPENDENCE OF GA0.47IN0.53 AS ALXIN1-XAS POWER HEMT BREAKDOWN VOLTAGE ON SCHOTTKY LAYER DESIGN AND DEVICE LAYOUT/, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2111-2112
Authors:
LARSON LE
MATLOUBIAN MM
BROWN JJ
BROWN AS
RHODES R
CRAMPTON D
THOMPSON M
Citation: Le. Larson et al., ALINAS GAINAS ON INP HEMTS FOR LOW-POWER SUPPLY VOLTAGE OPERATION OF HIGH POWER-ADDED EFFICIENCY MICROWAVE-AMPLIFIERS/, Electronics Letters, 29(15), 1993, pp. 1324-1326