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Results: 1-9 |
Results: 9

Authors: NEUMANN R EBERT M GABEL B GULSDORFF J KRANNICH H LAUTERBACH C WIEDL K
Citation: R. Neumann et al., PREJUDICE BETWEEN BAVARIANS AND NORTH GERMANS - APPLYING A NEW METHODFOR ASSESSING EVALUATIVE ASSOCIATION WITHIN PREJUDICE, Zeitschrift fur experimentelle Psychologie, 45(2), 1998, pp. 99-108

Authors: ENGEMANN C HORMES J CLADE J JANSEN M LAUTERBACH C HARTMANN E
Citation: C. Engemann et al., X-RAY-ABSORPTION NEAR-EDGE SPECTROSCOPY (XANES) AT THE PHOSPHORUS K-EDGE OF TRIORGANOPHOSPHINESELENIDES, Journal de physique. IV, 7(C2), 1997, pp. 539-540

Authors: GUNTHER C HARTMANN E LAUTERBACH C HORMES J
Citation: C. Gunther et al., X-RAY-EMISSION FROM CHEMICALLY BOUND ATOMS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 109, 1996, pp. 42-46

Authors: CYRENER J LAUTERBACH C BURGER K
Citation: J. Cyrener et al., AN EFFICIENT SYNTHESIS OF ETHYL 4-AROYL-5-TRIFLUOROMETHYLPYRAZOLE 3-CARBOXYLATES, Journal of fluorine chemistry, 78(1), 1996, pp. 55-58

Authors: ROMER D LAUTERBACH C HOFFMANN L WALTER JW HUBER H EBBINGHAUS G
Citation: D. Romer et al., 700-MB S MONOLITHICALLY INTEGRATED 4-CHANNEL RECEIVER ARRAY OEIC USING ION-IMPLANTED INGAAS JFET TECHNOLOGY/, IEEE photonics technology letters, 7(5), 1995, pp. 543-545

Authors: LAUTERBACH C
Citation: C. Lauterbach, ZINC DIFFUSION IN INP FROM SPIN-ON FILMS OF VARIOUS ZINC CONCENTRATIONS, Semiconductor science and technology, 10(4), 1995, pp. 500-503

Authors: WOLLERSHEIM HJ EMLING H GREIN H KULESSA R SIMON RS FLEISCHMANN C DEBOER J HAUBER E LAUTERBACH C SCHANDERA C BUTLER PA CZOSNYKA T
Citation: Hj. Wollersheim et al., COULOMB-EXCITATION OF RA-226, Nuclear physics. A, 556(2), 1993, pp. 261-280

Authors: BAUER JG LAUTERBACH C ROMER D EMEIS N HOFFMANN L EBBINGHAUS G
Citation: Jg. Bauer et al., MONOLITHIC INTEGRATION OF A WAVE-GUIDE INGAAS INP PIN PHOTODIODE WITHA LOCALLY ION-IMPLANTED JFET FOR RECEIVER OEIC APPLICATIONS/, IEE proceedings. Part J, Optoelectronics, 140(1), 1993, pp. 66-70

Authors: WALTER JW LAUTERBACH C ROMER D MULLER J EBBINGHAUS G
Citation: Jw. Walter et al., FULLY ION-IMPLANTED INP INGAAS HETEROJUNCTION FET FABRICATION IN A PHOTODIODE LAYER STRUCTURE FOR MONOLITHIC INTEGRATION/, Electronics Letters, 29(18), 1993, pp. 1599-1600
Risultati: 1-9 |