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Results: 1-25/85
Authors:
LEE YS
LIN HY
LEI TF
HUANG TY
CHANG TC
CHANG CY
Citation: Ys. Lee et al., COMPARISON OF N-2 AND NH3 PLASMA PASSIVATION EFFECTS ON POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, JPN J A P 1, 37(7), 1998, pp. 3900-3903
Authors:
LAI CS
CHAO TS
LEI TF
LEE CL
HUANG TY
CHANG CY
Citation: Cs. Lai et al., IMPROVEMENT OF RELIABILITY OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH N2O NITRIDED GATE OXIDE AND N2O POLYSILICON GATE REOXIDATION, JPN J A P 1, 37(10), 1998, pp. 5507-5509
Authors:
CHU CH
HO KJ
HUANG CT
SHVU SH
LEI TF
Citation: Ch. Chu et al., CONTROLLING THE DIFFUSION OF IMPLANTED BORON IN SI AND SILICIDE BY MULTIPLE IMPLANTS, Materials chemistry and physics, 54(1-3), 1998, pp. 60-66
Authors:
LEI TF
CHENG JY
SHIAU SY
CHAO TS
LAI CS
Citation: Tf. Lei et al., CHARACTERIZATION OF POLYSILICON OXIDES THERMALLY GROWN AND DEPOSITED ON THE POLISHED POLYSILICON FILMS, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 912-917
Authors:
LIN YH
LEE CL
LEI TF
Citation: Yh. Lin et al., CORRELATION OF STRESS-INDUCED LEAKAGE CURRENT WITH GENERATED POSITIVETRAPPED CHARGES FOR ULTRATHIN GATE OXIDE, I.E.E.E. transactions on electron devices, 45(2), 1998, pp. 567-570
Authors:
CHAO TS
KUO CP
LEI TF
CHEN TP
HUANG TY
CHANG CY
Citation: Ts. Chao et al., SUPPRESSION OF BORON PENETRATION IN P(-B DIFFUSION SOURCE() POLYSILICON GATE USING SI), Electronics Letters, 34(1), 1998, pp. 128-129
Authors:
LIN YM
LEI TF
Citation: Ym. Lin et Tf. Lei, THE CHARACTERISTICS OF POLYSILICON OXIDE GROWN ON AMORPHOUS-SILICON DEPOSITED FROM DISILANE, JPN J A P 1, 36(8), 1997, pp. 5040-5043
Authors:
LIN HY
CHANG CY
LEI TF
CHENG JY
TSENG HC
CHEN LP
Citation: Hy. Lin et al., CHARACTERIZATION OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS FABRICATED BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION AND CHEMICAL-MECHANICAL POLISHING, JPN J A P 1, 36(7A), 1997, pp. 4278-4282
Authors:
LIOU BW
LEE CL
LEI TF
WU YH
Citation: Bw. Liou et al., HYDROGEN AND OXYGEN PLASMA EFFECTS ON POLYCRYSTALLINE SILICON THIN-FILMS OF VARIOUS THICKNESSES, JPN J A P 1, 36(6A), 1997, pp. 3389-3395
Authors:
CHENG JY
LEI TF
CHAO TS
Citation: Jy. Cheng et al., A NOVEL SHALLOW TRENCH ISOLATION TECHNIQUE, JPN J A P 1, 36(3B), 1997, pp. 1319-1324
Authors:
CHAO TS
CHIEN CH
HAO CP
LIAW MC
CHU CH
CHANG CY
LEI TF
SUN WT
HSU CH
Citation: Ts. Chao et al., SUPPRESSION OF BORON PENETRATION IN P-POLY-SI GATE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR USING NITROGEN IMPLANTATION(), JPN J A P 1, 36(3B), 1997, pp. 1364-1367
Authors:
YANG HM
LEI TF
Citation: Hm. Yang et Tf. Lei, THE DC CIRCUIT MODEL OF A MOS MAGNETIC SENSOR, Sensors and actuators. A, Physical, 58(2), 1997, pp. 125-127
Authors:
LEI TF
CHENG JY
SHIAU SY
CHAO TS
LAI CS
Citation: Tf. Lei et al., IMPROVEMENT OF POLYSILICON OXIDE BY GROWING ON POLISHED POLYSILICON FILM, IEEE electron device letters, 18(6), 1997, pp. 270-271
Authors:
LIN YH
LEE CL
LEI TF
Citation: Yh. Lin et al., MONITORING TRAPPED CHARGE GENERATION FOR GATE OXIDE UNDER STRESS, I.E.E.E. transactions on electron devices, 44(9), 1997, pp. 1441-1446
Authors:
HUANG CT
LEI TF
Citation: Ct. Huang et Tf. Lei, IMPACT OF GE IMPLANTATION ON THE ELECTRICAL CHARACTERISTICS OF TISI2 P(+) N SHALLOW JUNCTIONS WITH AN ALPHA-SI (OR A POLY-SI) BUFFER LAYER/, I.E.E.E. transactions on electron devices, 44(4), 1997, pp. 601-606
Authors:
WU SL
CHEN CY
LIN TY
LEE CL
LEI TF
LIANG MS
Citation: Sl. Wu et al., INVESTIGATION OF THE POLARITY ASYMMETRY ON THE ELECTRICAL CHARACTERISTICS OF THIN POLYOXIDES GROWN ON N+ POLYSILICON, I.E.E.E. transactions on electron devices, 44(1), 1997, pp. 153-159
Authors:
YANG HM
LEI TF
HUANG YC
LEE CL
Citation: Hm. Yang et al., MOS MAGNETIC CURRENT SENSOR-BASED ON STANDARD CMOS PROCESS, Electronics Letters, 33(7), 1997, pp. 601-602
Authors:
YANG WL
LIN CJ
CHAO TS
LIU DG
LEI TF
Citation: Wl. Yang et al., SUPPRESSION OF BORON PENETRATION BY USING INDUCTIVE-COUPLING-NITROGEN-PLASMA IN STACKED AMORPHOUS POLYSILICON GATE STRUCTURE/, Electronics Letters, 33(13), 1997, pp. 1139-1140
Authors:
LIN YM
JANG SM
YU CH
LEI TF
Citation: Ym. Lin et al., IMPROVEMENT OF WATER-RELATED HOT-CARRIER RELIABILITY BY OPTIMIZING THE PLASMA-ENHANCED TETRA-ETHOXYSILANE DEPOSITION PROCESS, Journal of the Electrochemical Society, 144(8), 1997, pp. 2898-2903
Authors:
LIN YM
JANG SM
YU CH
LEI TF
CHEN JY
Citation: Ym. Lin et al., PLASMA CHARGING DAMAGE AND WATER-RELATED HOT-CARRIER RELIABILITY IN THE DEPOSITION OF PLASMA-ENHANCED TETRAETHYLORTHOSILICATE OXIDE, Journal of the Electrochemical Society, 144(7), 1997, pp. 2525-2530
Authors:
HUANG WC
LEI TF
LEE CL
Citation: Wc. Huang et al., EFFECTS OF BROMINE-METHANOL AND HYDROGEN-CHLORIDE PRETREATMENTS ON PTAL/N-INP DIODES/, Journal of the Electrochemical Society, 144(2), 1997, pp. 627-633
Authors:
CHENG JY
LEI TF
CHAO TS
YEN DLW
LIN CJ
Citation: Jy. Cheng et al., A NOVEL PLANARIZATION OF OXIDE-FILLED SHALLOW-TRENCH ISOLATION, Journal of the Electrochemical Society, 144(1), 1997, pp. 315-320
Authors:
CHAO TS
CHU CH
WANG CF
HO KJ
LEI TF
LEE CL
Citation: Ts. Chao et al., SUPPRESSION OF BORON PENETRATION IN BF2-IMPLANTED POLY-SI GATE(), JPN J A P 1, 35(12A), 1996, pp. 6003-6007
Authors:
YANG HM
HUANG YC
LEI TF
LEE CL
CHAO SC
Citation: Hm. Yang et al., HIGH-RESOLUTION MOS MAGNETIC SENSOR WITH THIN OXIDE IN STANDARD SUBMICRON CMOS PROCESS, Sensors and actuators. A, Physical, 57(1), 1996, pp. 9-13
A NOVEL STRUCTURE FOR 3-DIMENSIONAL SILICON MAGNETIC TRANSDUCERS TO IMPROVE THE SENSITIVITY SYMMETRY
Authors:
LIN HY
LEI TF
JENG JJ
PAN CL
CHANG CY
Citation: Hy. Lin et al., A NOVEL STRUCTURE FOR 3-DIMENSIONAL SILICON MAGNETIC TRANSDUCERS TO IMPROVE THE SENSITIVITY SYMMETRY, Sensors and actuators. A, Physical, 56(3), 1996, pp. 233-237