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Results: 1-25 | 26-47
Results: 1-25/47
PARALLEL OPERATION OF 50-ELEMENT 2-DIMENSIONAL CMOS SMART-PIXEL RECEIVER ARRAY
Authors: WOODWARD TK LENTINE AL KRISHNAMOORTHY AV GOOSSEN KW WALKER JA CUNNINGHAM JE JAN WY TSENG BT HUI SP LEIBENGUTH RE
Citation: Tk. Woodward et al., PARALLEL OPERATION OF 50-ELEMENT 2-DIMENSIONAL CMOS SMART-PIXEL RECEIVER ARRAY, Electronics Letters, 34(10), 1998, pp. 936-937
MEASUREMENT OF THE ZERO-BIAS ELECTRON TRANSMITTANCE AS A FUNCTION OF ENERGY FOR HALF-ELECTRON-WAVELENGTH AND QUARTER-ELECTRON-WAVELENGTH SEMICONDUCTOR QUANTUM-INTERFERENCE FILTERS
Authors: GUTHRIE DK FIRST PN GAYLORD TK GLYTSIS EN LEIBENGUTH RE
Citation: Dk. Guthrie et al., MEASUREMENT OF THE ZERO-BIAS ELECTRON TRANSMITTANCE AS A FUNCTION OF ENERGY FOR HALF-ELECTRON-WAVELENGTH AND QUARTER-ELECTRON-WAVELENGTH SEMICONDUCTOR QUANTUM-INTERFERENCE FILTERS, Applied physics letters, 72(3), 1998, pp. 374-376
DEMULTIPLEXING 2.48-GB S OPTICAL SIGNALS WITH A CMOS RECEIVER ARRAY BASED ON CLOCKED-SENSE-AMPLIFIERS/
Authors: WOODWARD TK LENTINE AL GOOSSEN KW WALKER JA TSENG BT HUI SP LOTHIAN J LEIBENGUTH RE
Citation: Tk. Woodward et al., DEMULTIPLEXING 2.48-GB S OPTICAL SIGNALS WITH A CMOS RECEIVER ARRAY BASED ON CLOCKED-SENSE-AMPLIFIERS/, IEEE photonics technology letters, 9(8), 1997, pp. 1146-1148
LARGE ARRAY OF GAAS MODULATORS AND DETECTORS FLIP-CHIP SOLDER BONDED TO SILICON CMOS USING INGAP AS THE SELECTIVE ETCH-STOP FOR GAAS SUBSTRATE REMOVAL
Authors: KUO JM WANG YC GOOSSEN KW CHIROVSKY LMF HUI SP TSENG BT WALKER J LENTINE AL LEIBENGUTH RE LIVESCU G JAN WY CUNNINGHAM JE DASARO LA RON A DAHRINGER D KOSSIVES D BACON DD MORRISON RL NOVOTNY RA BUCHHOLZ DB MAYO WE
Citation: Jm. Kuo et al., LARGE ARRAY OF GAAS MODULATORS AND DETECTORS FLIP-CHIP SOLDER BONDED TO SILICON CMOS USING INGAP AS THE SELECTIVE ETCH-STOP FOR GAAS SUBSTRATE REMOVAL, Journal of crystal growth, 175, 1997, pp. 971-976
OPTOELECTRONIC VLSI SWITCHING CHIP WITH GREATER-THAN 1 TBIT S POTENTIAL OPTICAL I/O BANDWIDTH/
Authors: LENTINE AL GOOSSEN KW WALKER JA CUNNINGHAM JE JAN WY WOODWARD TK KRISHNAMOORTHY AV TSENG BJ HUI SP LEIBENGUTH RE CHIROVSKY LMF NOVOTNY RA BUCHHOLZ DB MORRISON RL
Citation: Al. Lentine et al., OPTOELECTRONIC VLSI SWITCHING CHIP WITH GREATER-THAN 1 TBIT S POTENTIAL OPTICAL I/O BANDWIDTH/, Electronics Letters, 33(10), 1997, pp. 894-895
ELECTRON-WAVE INTERFERENCE EFFECTS IN A GA1-XALXAS SINGLE-BARRIER STRUCTURE MEASURED BY BALLISTIC-ELECTRON-EMISSION SPECTROSCOPY
Authors: GUTHRIE DK FIRST PN GAYLORD TK GLYTSIS EN LEIBENGUTH RE
Citation: Dk. Guthrie et al., ELECTRON-WAVE INTERFERENCE EFFECTS IN A GA1-XALXAS SINGLE-BARRIER STRUCTURE MEASURED BY BALLISTIC-ELECTRON-EMISSION SPECTROSCOPY, Applied physics letters, 71(16), 1997, pp. 2292-2294
HIGH-SPEED OPTOELECTRONIC VLSI SWITCHING CHIP WITH GREATER-THAN-4000 OPTICAL I O BASED ON FLIP-CHIP BONDING OF MQW MODULATORS AND DETECTORSTO SILICON CMOS/
Authors: LENTINE AL GOOSSEN KW WALKER JA CHIROVSKY LMF DASARO LA HUI SP TSENG BJ LEIBENGUTH RE CUNNINGHAM JE JAN WY KUO JM DAHRINGER DW KOSSIVES DP BACON D LIVESCU G MORRISON RL NOVOTNY RA BUCHHOLZ DB
Citation: Al. Lentine et al., HIGH-SPEED OPTOELECTRONIC VLSI SWITCHING CHIP WITH GREATER-THAN-4000 OPTICAL I O BASED ON FLIP-CHIP BONDING OF MQW MODULATORS AND DETECTORSTO SILICON CMOS/, IEEE journal of selected topics in quantum electronics, 2(1), 1996, pp. 77-84
CLOCKED-SENSE-AMPLIFIER-BASED SMART-PIXEL OPTICAL RECEIVERS
Authors: WOODWARD TK KRISHNAMOORTHY AV GOOSSEN KW WALKER JA CUNNINGHAM JE JAN WY CHIROVSKY LMF HUI SP TSENG B KOSSIVES D DAHRINGER D BACON D LEIBENGUTH RE
Citation: Tk. Woodward et al., CLOCKED-SENSE-AMPLIFIER-BASED SMART-PIXEL OPTICAL RECEIVERS, IEEE photonics technology letters, 8(8), 1996, pp. 1067-1069
1-GB S 2-BEAM TRANSIMPEDANCE SMART-PIXEL OPTICAL RECEIVERS MADE FROM HYBRID GAAS MQW MODULATORS BONDED TO 0.8-MU-M SILICON CMOS/
Authors: WOODWARD TK KRISHNAMOORTHY AV LENTINE AL GOOSSEN KW WALKER JA CUNNINGHAM JE JAN WY DASARO LA CHIROVSKY LMF HUI SP TSENG B KOSSIVES D DAHRINGER D LEIBENGUTH RE
Citation: Tk. Woodward et al., 1-GB S 2-BEAM TRANSIMPEDANCE SMART-PIXEL OPTICAL RECEIVERS MADE FROM HYBRID GAAS MQW MODULATORS BONDED TO 0.8-MU-M SILICON CMOS/, IEEE photonics technology letters, 8(3), 1996, pp. 422-424
ARRAYS OF OPTOELECTRONIC SWITCHING NODES COMPRISED OF FLIP-CHIP-BONDED MQW MODULATORS AND DETECTORS ON SILICON CMOS CIRCUITRY
Authors: LENTINE AL GOOSSEN KW WALKER JA CHIROVSKY LMF DASARO LA HUI SP TSENG BT LEIBENGUTH RE KOSSIVES DP DAHRINGER DW BACON DD WOODWARD TK MILLER DAB
Citation: Al. Lentine et al., ARRAYS OF OPTOELECTRONIC SWITCHING NODES COMPRISED OF FLIP-CHIP-BONDED MQW MODULATORS AND DETECTORS ON SILICON CMOS CIRCUITRY, IEEE photonics technology letters, 8(2), 1996, pp. 221-223
BALLISTIC-ELECTRON-EMISSION SPECTROSCOPY OF AU SI AND AU/GAAS INTERFACES - LOW-TEMPERATURE MEASUREMENTS AND BALLISTIC MODELS/
Authors: GUTHRIE DK HARRELL LE HENDERSON GN FIRST PN GAYLORD TK GLYTSIS EN LEIBENGUTH RE
Citation: Dk. Guthrie et al., BALLISTIC-ELECTRON-EMISSION SPECTROSCOPY OF AU SI AND AU/GAAS INTERFACES - LOW-TEMPERATURE MEASUREMENTS AND BALLISTIC MODELS/, Physical review. B, Condensed matter, 54(23), 1996, pp. 16972-16982
STRONG MAGNETIC-FIELD DEPENDENCE OF LASER-EMISSION FROM QUANTUM WIRESFORMED BY CLEAVED EDGE OVERGROWTH
Authors: WEGSCHEIDER W PFEIFFER LN WEST KW LITTLEWOOD P NARAYAN O HAGN M DIGNAM MM LEIBENGUTH RE
Citation: W. Wegscheider et al., STRONG MAGNETIC-FIELD DEPENDENCE OF LASER-EMISSION FROM QUANTUM WIRESFORMED BY CLEAVED EDGE OVERGROWTH, Solid-state electronics, 40(1-8), 1996, pp. 1-6
GAIN-DEPENDENT POLARIZATION PROPERTIES OF VERTICAL-CAVITY LASERS
Authors: CHOQUETTE KD SCHNEIDER RP LEAR KL LEIBENGUTH RE
Citation: Kd. Choquette et al., GAIN-DEPENDENT POLARIZATION PROPERTIES OF VERTICAL-CAVITY LASERS, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 661-666
RING OSCILLATORS WITH MONOLITHICALLY INTEGRATED-OPTICAL READOUT BASEDON GAAS-ALGAAS FET-SEED TECHNOLOGY
Authors: WOODWARD TK NOVOTNY RA LENTINE AL CHIROVSKY LMF DASARO LA HUI S FOCHT MW GUTH GD SMITH LE LEIBENGUTH RE
Citation: Tk. Woodward et al., RING OSCILLATORS WITH MONOLITHICALLY INTEGRATED-OPTICAL READOUT BASEDON GAAS-ALGAAS FET-SEED TECHNOLOGY, IEEE electron device letters, 16(2), 1995, pp. 52-54
TECHNOLOGY DEVELOPMENT OF A HIGH-DENSITY 32-CHANNEL 16-GB S OPTICAL-DATA LINK FOR OPTICAL INTERCONNECTION APPLICATIONS FOR THE OPTOELECTRONIC TECHNOLOGY CONSORTIUM (OETC)/
Authors: WONG YM MUEHLNER DJ FAUDSKAR CC BUCHHOLZ DB FISHTEYN M BRANDNER JL PARZYGNAT WJ MORGAN RA MULLALLY T LEIBENGUTH RE GUTH GD FOCHT MW GLOGOVSKY KG ZILKO JL GATES JV ANTHONY PJ TYRONE BH IRELAND TJ LEWIS DH SMITH DF NATI SF LEWIS DK ROGERS DL AISPAIN HA GOWDA SM WALKER SG KWARK YH BATES RJS KUCHTA DM CROW JD
Citation: Ym. Wong et al., TECHNOLOGY DEVELOPMENT OF A HIGH-DENSITY 32-CHANNEL 16-GB S OPTICAL-DATA LINK FOR OPTICAL INTERCONNECTION APPLICATIONS FOR THE OPTOELECTRONIC TECHNOLOGY CONSORTIUM (OETC)/, Journal of lightwave technology, 13(6), 1995, pp. 995-1016
GAAS ALGAAS QUANTUM-WIRE LASERS FABRICATED BY CLEAVED EDGE OVERGROWTH/
Authors: WEGSCHEIDER W PFEIFFER LN PINCZUK A WEST KW DIGNAM MM HULL R LEIBENGUTH RE
Citation: W. Wegscheider et al., GAAS ALGAAS QUANTUM-WIRE LASERS FABRICATED BY CLEAVED EDGE OVERGROWTH/, Journal of crystal growth, 150(1-4), 1995, pp. 285-292
CONTINUOUS-WAVE SPECTRAL WIDTH OF SURFACE-EMITTING LASERS
Authors: DUTTA NK VAKHSHOORI D WYNN JD LEIBENGUTH RE
Citation: Nk. Dutta et al., CONTINUOUS-WAVE SPECTRAL WIDTH OF SURFACE-EMITTING LASERS, Journal of applied physics, 77(3), 1995, pp. 1326-1327
EXPERIMENTAL-OBSERVATION OF VERTICAL-CAVITY WITH POLARIZATION BIREFRINGENCE USING ASYMMETRIC SUPERLATTICE
Authors: VAKHSHOORI D LEIBENGUTH RE
Citation: D. Vakhshoori et Re. Leibenguth, EXPERIMENTAL-OBSERVATION OF VERTICAL-CAVITY WITH POLARIZATION BIREFRINGENCE USING ASYMMETRIC SUPERLATTICE, Applied physics letters, 67(8), 1995, pp. 1045-1047
4X4 ARRAYS OF FET-SEED EMBEDDED CONTROL 2X1 OPTOELECTRONIC SWITCHING NODES WITH ELECTRICAL FAN-OUT
Authors: LENTINE AL NOVOTNY RA CLOONAN TJ CHIROVSKY LMF DASARO LA LIVESCU G HUI S FOCHT MW FREUND JM GUTH GD LEIBENGUTH RE GLOGOVSKY KG WOODWARD TK
Citation: Al. Lentine et al., 4X4 ARRAYS OF FET-SEED EMBEDDED CONTROL 2X1 OPTOELECTRONIC SWITCHING NODES WITH ELECTRICAL FAN-OUT, IEEE photonics technology letters, 6(9), 1994, pp. 1126-1129
2-DIMENSIONAL MATRIX ADDRESSED VERTICAL-CAVITY TOP-SURFACE EMITTING LASER ARRAY DISPLAY
Authors: MORGAN RA GUTH GD ZIMMER C LEIBENGUTH RE FOCHT MW FREUND JM GLOGOVSKY KG MULLALLY T JUDD FF ASOM MT
Citation: Ra. Morgan et al., 2-DIMENSIONAL MATRIX ADDRESSED VERTICAL-CAVITY TOP-SURFACE EMITTING LASER ARRAY DISPLAY, IEEE photonics technology letters, 6(8), 1994, pp. 913-917
BINARY OPTICAL SWITCH AND PROGRAMMABLE OPTICAL LOGIC GATE BASED ON THE INTEGRATION OF GAAS ALGAAS SURFACE-EMITTING LASERS AND HETEROJUNCTION PHOTOTRANSISTORS/
Authors: LU B ZHOU P LU YC CHENG J LEIBENGUTH RE ADAMS AC ZILKO JL LEAR KL ZOLPER JC CHALMERS SA VAWTER GA
Citation: B. Lu et al., BINARY OPTICAL SWITCH AND PROGRAMMABLE OPTICAL LOGIC GATE BASED ON THE INTEGRATION OF GAAS ALGAAS SURFACE-EMITTING LASERS AND HETEROJUNCTION PHOTOTRANSISTORS/, IEEE photonics technology letters, 6(3), 1994, pp. 398-401
RECONFIGURABLE BINARY OPTICAL ROUTING SWITCHES WITH FAN-OUT BASED ON THE INTEGRATION OF GAAS ALGAAS SURFACE-EMITTING LASERS AND HETEROJUNCTION PHOTOTRANSISTORS/
Authors: LU B LU YC CHENG J LEIBENGUTH RE ADAMS AC ZILKO JL ZOLPER JC LEAR KL CHALMERS SA VAWTER GA
Citation: B. Lu et al., RECONFIGURABLE BINARY OPTICAL ROUTING SWITCHES WITH FAN-OUT BASED ON THE INTEGRATION OF GAAS ALGAAS SURFACE-EMITTING LASERS AND HETEROJUNCTION PHOTOTRANSISTORS/, IEEE photonics technology letters, 6(2), 1994, pp. 222-226
CONTROL OF VERTICAL-CAVITY LASER POLARIZATION WITH ANISOTROPIC TRANSVERSE CAVITY GEOMETRIES
Authors: CHOQUETTE KD LEIBENGUTH RE
Citation: Kd. Choquette et Re. Leibenguth, CONTROL OF VERTICAL-CAVITY LASER POLARIZATION WITH ANISOTROPIC TRANSVERSE CAVITY GEOMETRIES, IEEE photonics technology letters, 6(1), 1994, pp. 40-42
IMPROVED EPITAXIAL LAYER DESIGN FOR REAL-TIME MONITORING OF DRY-ETCHING IN III-V COMPOUND HETEROSTRUCTURES WITH DEPTH ACCURACY OF + -8 NM/
Authors: VAWTER GA KLEM JF LEIBENGUTH RE
Citation: Ga. Vawter et al., IMPROVED EPITAXIAL LAYER DESIGN FOR REAL-TIME MONITORING OF DRY-ETCHING IN III-V COMPOUND HETEROSTRUCTURES WITH DEPTH ACCURACY OF + -8 NM/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1973-1977
LOW-TEMPERATURE PERFORMANCE OF SHORT-WAVELENGTH SUPERLATTICE GAAS-ALGAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS
Authors: YOO J LEE YH LEIBENGUTH RE
Citation: J. Yoo et al., LOW-TEMPERATURE PERFORMANCE OF SHORT-WAVELENGTH SUPERLATTICE GAAS-ALGAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS, Journal of the Korean Physical Society, 27(4), 1994, pp. 422-424
Risultati: 1-25 | 26-47