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Authors: TABATA A CESCHIN AM QUIVY AA LEVINE A LEITE JR ENDERLEIN R OLIVEIRA JBB LAURETO E GONCALVES JL
Citation: A. Tabata et al., INVESTIGATION OF THE PHOTOLUMINESCENCE LINEWIDTH BROADENING IN SYMMETRICAL AND ASYMMETRIC INGAAS GAAS N-TYPE DELTA-DOPED QUANTUM-WELLS/, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 401-405

Authors: ENDERLEIN R BELIAEV D SOARES JANT SCOLFARO LMR LEITE JR
Citation: R. Enderlein et al., METHOD FOR CALCULATING PHOTOREFLECTANCE AND ELECTROREFLECTANCE SPECTRA FROM SEMICONDUCTOR HETEROSTRUCTURES, Physical review. B, Condensed matter, 52(4), 1995, pp. 2814-2822

Authors: SCOLFARO LMR BELIAEV D ENDERLEIN R LEITE JR
Citation: Lmr. Scolfaro et al., ENERGY-LEVELS DUE TO N-TYPE DELTA-DOPING IN SILICON, Solid state communications, 93(5), 1995, pp. 469-469

Authors: CESCHIN AM QUIVY AA SOARES JANT ENDERLEIN R TABATA A SCOLFARO LMR DASILVA ECF LEITE JR OLIVEIRA JBB MENESES EA
Citation: Am. Ceschin et al., PHOTOLUMINESCENCE AND PHOTOREFLECTANCE STUDIES ON DELTA-DOPED IN0.15GA0.85AS GAAS QUANTUM-WELLS/, Superlattices and microstructures, 15(3), 1994, pp. 333-337

Authors: BELIAEV D ENDERLEIN R SOARES JANT SCOLFARO LMR CESCHIN AM QUIVY AA LEITE JR
Citation: D. Beliaev et al., PHOTOREFLECTANCE AND ELECTROREFLECTANCE SPECTRA FROM SPATIALLY INHOMOGENEOUS HETEROSTRUCTURES CALCULATED BY MEANS OF A NEW METHOD, Superlattices and microstructures, 15(3), 1994, pp. 339-343

Authors: ANDREATINI R LEITE JR
Citation: R. Andreatini et Jr. Leite, THE EFFECT OF CORTICOSTERONE IN RATS SUBMITTED TO THE ELEVATED PLUS-MAZE AND TO PENTYLENETETRAZOL-INDUCED CONVULSIONS, Progress in neuro-psychopharmacology & biological psychiatry, 18(8), 1994, pp. 1333-1347

Authors: ENDERLEIN R SCOLFARO LMR LEITE JR
Citation: R. Enderlein et al., PLATEAU BEHAVIOR AND THE METAL-INSULATOR-TRANSITION IN DELTA-DOPING SUPERLATTICES FOR TRANSPORT ALONG THE GROWTH DIRECTION, Physical review. B, Condensed matter, 50(24), 1994, pp. 18312-18318

Authors: SCOLFARO LMR BELIAEV D ENDERLEIN R LEITE JR
Citation: Lmr. Scolfaro et al., ELECTRONIC-STRUCTURE OF N-TYPE DELTA-DOPING MULTIPLE LAYERS AND SUPERLATTICES IN SILICON, Physical review. B, Condensed matter, 50(12), 1994, pp. 8699-8705

Authors: ANDREATINI R LEITE JR
Citation: R. Andreatini et Jr. Leite, EVIDENCE AGAINST THE INVOLVEMENT OF ACTH CRF RELEASE OR CORTICOSTEROID RECEPTORS IN THE ANXIOLYTIC EFFECT OF CORTICOSTERONE, Brazilian journal of medical and biological research, 27(5), 1994, pp. 1237-1241

Authors: SCOLFARO LMR BELIAEV D LEITE JR LINO AT TAKAHASHI EK
Citation: Lmr. Scolfaro et al., ELECTRONIC-PROPERTIES OF MULTIPLE DELTA-DOPED LAYERS IN SILICON AND GAAS, International journal of quantum chemistry, 1994, pp. 667-673

Authors: ANDREATINI R LEITE JR
Citation: R. Andreatini et Jr. Leite, EFFECT OF VALEPOTRIATES ON THE BEHAVIOR OF RATS IN THE ELEVATED PLUS-MAZE DURING DIAZEPAM WITHDRAWAL, European journal of pharmacology, 260(2-3), 1994, pp. 233-235

Authors: ANDREATINI R SARTORI VA LEITE JR OLIVEIRA ASB
Citation: R. Andreatini et al., PANIC ATTACKS IN A MULTIPLE-SCLEROSIS PATIENT, Biological psychiatry, 35(2), 1994, pp. 133-134

Authors: BELIAEV D SCOLFARO LMR LEITE JR
Citation: D. Beliaev et al., NEW THEORETICAL-MODEL FOR OPTICAL-TRANSITIONS IN THE PHOTOREFLECTANCESPECTRUM FROM DELTA-DOPED STRUCTURES, Semiconductor science and technology, 8(7), 1993, pp. 1479-1482

Authors: MENDONCA CAC PLENTZ F OLIVEIRA JBB MENESES EA SCOLFARO LMR BELIAEV D SHIBLI SM LEITE JR
Citation: Cac. Mendonca et al., EVIDENCE OF A 2-DIMENSIONAL TO 3-DIMENSIONAL TRANSITION IN SI DELTA-DOPED GAAS STRUCTURES, Physical review. B, Condensed matter, 48(16), 1993, pp. 12316-12318

Authors: SHIBLI SM HENRIQUES AB MENDONCA CAC DASILVA ECF MENESES EA SCOLFARO LMR LEITE JR
Citation: Sm. Shibli et al., ELECTRONIC-PROPERTIES OF MULTIPLE SI DELTA-DOPED GAAS-LAYERS GROWN BYMOLECULAR-BEAM EPITAXY AND MIGRATION-ENHANCED EPITAXY, Journal of crystal growth, 127(1-4), 1993, pp. 700-702

Authors: SCOLFARO LMR PINTANEL R FAZZIO A LEITE JR
Citation: Lmr. Scolfaro et al., ELECTRONIC STATES INDUCED BY A GA VACANCY IN THE GAAS1-XPX ALLOY, International journal of quantum chemistry, 1993, pp. 213-217
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