AAAAAA

   
Results: 1-25 | 26-28
Results: 1-25/28
LOCALIZATION OF EXCITONS BY POTENTIAL FLUCTUATIONS AND ITS EFFECT ON THE STOKES SHIFT IN INGAP INP QUANTUM-CONFINED HETEROSTRUCTURES/
Authors: AITOUALI A CHENNOUF A YIP RYF BREBNER JL LEONELLI R MASUT RA
Citation: A. Aitouali et al., LOCALIZATION OF EXCITONS BY POTENTIAL FLUCTUATIONS AND ITS EFFECT ON THE STOKES SHIFT IN INGAP INP QUANTUM-CONFINED HETEROSTRUCTURES/, Journal of applied physics, 84(10), 1998, pp. 5639-5642
SELF-STARTING PASSIVELY MODE-LOCKED TUNABLE CR4-YTTRIUM-ALUMINUM-GARNET LASER WITH A SINGLE PRISM FOR DISPERSION COMPENSATION()
Authors: CHANG YM MACIEJKO R LEONELLI R THORPE AS
Citation: Ym. Chang et al., SELF-STARTING PASSIVELY MODE-LOCKED TUNABLE CR4-YTTRIUM-ALUMINUM-GARNET LASER WITH A SINGLE PRISM FOR DISPERSION COMPENSATION(), Applied physics letters, 73(15), 1998, pp. 2098-2100
OPTICAL-ABSORPTION AND DETERMINATION OF BAND-OFFSET IN STRAIN-BALANCED GAINP INASP MULTIPLE-QUANTUM WELLS GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY/
Authors: ABABOU Y DESJARDINS P CHENNOUF A MASUT RA YELON A BEAUDOIN M BENSAADA A LEONELLI R LESPERANCE G
Citation: Y. Ababou et al., OPTICAL-ABSORPTION AND DETERMINATION OF BAND-OFFSET IN STRAIN-BALANCED GAINP INASP MULTIPLE-QUANTUM WELLS GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY/, Semiconductor science and technology, 12(5), 1997, pp. 550-554
ORIGIN OF SHARP LINES IN PHOTOLUMINESCENCE EMISSION FROM SUBMONOLAYERS OF INAS IN GAAS
Authors: TRAN CA ARES RA KARASYUK VA WATKINS SP LETOURNEAU G LEONELLI R
Citation: Ca. Tran et al., ORIGIN OF SHARP LINES IN PHOTOLUMINESCENCE EMISSION FROM SUBMONOLAYERS OF INAS IN GAAS, Physical review. B, Condensed matter, 55(7), 1997, pp. 4633-4638
BAND-TO-BAND TRANSITIONS AND FREE-EXCITON STATES IN LOW-SYMMETRY CRYSTALLINE GATE
Authors: WAN JZ POLLAK FH BREBNER JL LEONELLI R
Citation: Jz. Wan et al., BAND-TO-BAND TRANSITIONS AND FREE-EXCITON STATES IN LOW-SYMMETRY CRYSTALLINE GATE, Solid state communications, 102(1), 1997, pp. 17-21
THE EFFECT OF AN ASYMMETRIC BAND OF LOCALIZED DEEP DONORS ON THE ELECTRONIC TRANSPORT OF HIGH-PURITY N-TYPE INP
Authors: BENZAQUEN R BENZAQUEN M LEONELLI R
Citation: R. Benzaquen et al., THE EFFECT OF AN ASYMMETRIC BAND OF LOCALIZED DEEP DONORS ON THE ELECTRONIC TRANSPORT OF HIGH-PURITY N-TYPE INP, Journal of applied physics, 82(11), 1997, pp. 5526-5531
LUMINESCENCE LINEWIDTH STUDY OF 2 FREE-EXCITON PEAKS IN CRYSTALLINE GATE
Authors: WAN JZ LEONELLI R BREBNER JL
Citation: Jz. Wan et al., LUMINESCENCE LINEWIDTH STUDY OF 2 FREE-EXCITON PEAKS IN CRYSTALLINE GATE, Physics letters. A, 219(5-6), 1996, pp. 345-348
PHOTOLUMINESCENCE TRANSIENT-DECAY STUDY OF THE DEEP-DONOR BOUND-EXCITON-EMISSION BAND IN HIGH-PURITY INP
Authors: BENZAQUEN R CHARBONNEAU S LEONELLI R ROTH AP
Citation: R. Benzaquen et al., PHOTOLUMINESCENCE TRANSIENT-DECAY STUDY OF THE DEEP-DONOR BOUND-EXCITON-EMISSION BAND IN HIGH-PURITY INP, Physical review. B, Condensed matter, 53(7), 1996, pp. 3627-3629
SELF-CONSISTENT DETERMINATION OF THE BAND OFFSETS IN INASXP1-X INP STRAINED-LAYER QUANTUM-WELLS AND THE BOWING PARAMETER OF BULK INASXP1-X/
Authors: BEAUDOIN M BENSAADA A LEONELLI R DESJARDINS P MASUT RA ISNARD L CHENNOUF A LESPERANCE G
Citation: M. Beaudoin et al., SELF-CONSISTENT DETERMINATION OF THE BAND OFFSETS IN INASXP1-X INP STRAINED-LAYER QUANTUM-WELLS AND THE BOWING PARAMETER OF BULK INASXP1-X/, Physical review. B, Condensed matter, 53(4), 1996, pp. 1990-1996
POSSIBILITY OF COHERENT-LIGHT EMISSION FROM EXCITONS IN CRYSTALLINE GATE
Authors: WAN JZ BREBNER JL LEONELLI R
Citation: Jz. Wan et al., POSSIBILITY OF COHERENT-LIGHT EMISSION FROM EXCITONS IN CRYSTALLINE GATE, Physical review. B, Condensed matter, 53(23), 1996, pp. 15413-15416
STRUCTURAL AND OPTICAL CHARACTERIZATION OF INP GROWN ON SI(111) BY METALORGANIC VAPOR-PHASE EPITAXY USING THERMAL CYCLE GROWTH
Authors: ABABOU Y DESJARDINS P CHENNOUF A LEONELLI R HETHERINGTON D YELON A LESPERANCE G MASUT RA
Citation: Y. Ababou et al., STRUCTURAL AND OPTICAL CHARACTERIZATION OF INP GROWN ON SI(111) BY METALORGANIC VAPOR-PHASE EPITAXY USING THERMAL CYCLE GROWTH, Journal of applied physics, 80(9), 1996, pp. 4997-5005
STRUCTURAL AND OPTICAL-PROPERTIES OF STRAIN-RELAXED INASP INP HETEROSTRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY ON INP(001) USING TERTIARYBUTYLARSINE/
Authors: DESJARDINS P BEAUDOIN M LEONELLI R LESPERANCE G MASUT RA
Citation: P. Desjardins et al., STRUCTURAL AND OPTICAL-PROPERTIES OF STRAIN-RELAXED INASP INP HETEROSTRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY ON INP(001) USING TERTIARYBUTYLARSINE/, Journal of applied physics, 80(2), 1996, pp. 846-852
STRUCTURAL AND OPTICAL CHARACTERIZATION OF MONOLAYER INTERFACES IN GA0.47IN0.53AS INP MULTIPLE-QUANTUM WELLS GROWN BY CHEMICAL BEAM EPITAXY/
Authors: BENZAQUEN R ROTH AP LEONELLI R
Citation: R. Benzaquen et al., STRUCTURAL AND OPTICAL CHARACTERIZATION OF MONOLAYER INTERFACES IN GA0.47IN0.53AS INP MULTIPLE-QUANTUM WELLS GROWN BY CHEMICAL BEAM EPITAXY/, Journal of applied physics, 79(5), 1996, pp. 2640-2648
TEMPERATURE-DEPENDENCE OF THE FREE-EXCITON-EMISSION LINEWIDTH IN HIGH-PURITY INP
Authors: BENZAQUEN R LEONELLI R CHARBONNEAU S POOLE PJ ROTH AP
Citation: R. Benzaquen et al., TEMPERATURE-DEPENDENCE OF THE FREE-EXCITON-EMISSION LINEWIDTH IN HIGH-PURITY INP, Physical review. B, Condensed matter, 52(4), 1995, pp. 2273-2276
TEMPERATURE-DEPENDENCE OF THE SHALLOW-DONOR BOUND-EXCITON-EMISSION LINEWIDTH IN HIGH-PURITY INP
Authors: BENZAQUEN R LEONELLI R ROTH AP
Citation: R. Benzaquen et al., TEMPERATURE-DEPENDENCE OF THE SHALLOW-DONOR BOUND-EXCITON-EMISSION LINEWIDTH IN HIGH-PURITY INP, Physical review. B, Condensed matter, 52(3), 1995, pp. 1485-1488
FREE-EXCITON STATES IN CRYSTALLINE GATE
Authors: WAN JZ BREBNER JL LEONELLI R
Citation: Jz. Wan et al., FREE-EXCITON STATES IN CRYSTALLINE GATE, Physical review. B, Condensed matter, 52(23), 1995, pp. 16561-16566
OPTICAL-PROPERTIES OF RUTILE NEAR ITS FUNDAMENTAL-BAND GAP
Authors: AMTOUT A LEONELLI R
Citation: A. Amtout et R. Leonelli, OPTICAL-PROPERTIES OF RUTILE NEAR ITS FUNDAMENTAL-BAND GAP, Physical review. B, Condensed matter, 51(11), 1995, pp. 6842-6851
E(1)-GAP RESONANT ENHANCEMENT OF THE RAMAN-SCATTERING FROM HIGHLY STRAINED INAS INP SHORT-PERIOD SUPERLATTICES
Authors: TRAN CA BREBNER JL LEONELLI R JOUANNE M MASUT RA
Citation: Ca. Tran et al., E(1)-GAP RESONANT ENHANCEMENT OF THE RAMAN-SCATTERING FROM HIGHLY STRAINED INAS INP SHORT-PERIOD SUPERLATTICES, Superlattices and microstructures, 15(4), 1994, pp. 391-397
EVIDENCE FROM ELECTRICAL-TRANSPORT AND PHOTOLUMINESCENCE SPECTROSCOPYOF A BAND OF LOCALIZED DEEP DONORS IN HIGH-PURITY N-TYPE INP GROWN BYCHEMICAL-BEAM EPITAXY
Authors: BENZAQUEN R BENZAQUEN M CHARBONNEAU S POOLE PJ RAO TS LACELLE C ROTH AP LEONELLI R
Citation: R. Benzaquen et al., EVIDENCE FROM ELECTRICAL-TRANSPORT AND PHOTOLUMINESCENCE SPECTROSCOPYOF A BAND OF LOCALIZED DEEP DONORS IN HIGH-PURITY N-TYPE INP GROWN BYCHEMICAL-BEAM EPITAXY, Physical review. B, Condensed matter, 50(23), 1994, pp. 16964-16972
OPTICAL PHONONS IN STRAINED SINGLE INAS INP QUANTUM-WELLS - A RAMAN-STUDY/
Authors: TRAN CA BREBNER JL LEONELLI R JOUANNE M MASUT RA
Citation: Ca. Tran et al., OPTICAL PHONONS IN STRAINED SINGLE INAS INP QUANTUM-WELLS - A RAMAN-STUDY/, Physical review. B, Condensed matter, 49(16), 1994, pp. 11268-11271
MISFIT STRAIN, RELAXATION, AND BAND-GAP SHIFT IN GAXIN1-XP INP EPITAXIAL LAYERS/
Authors: BENSAADA A CHENNOUF A COCHRANE RW GRAHAM JT LEONELLI R MASUT RA
Citation: A. Bensaada et al., MISFIT STRAIN, RELAXATION, AND BAND-GAP SHIFT IN GAXIN1-XP INP EPITAXIAL LAYERS/, Journal of applied physics, 75(6), 1994, pp. 3024-3029
ALLOY BROADENING IN PHOTOLUMINESCENCE SPECTRA OF GAXIN1-XASYP1-Y LATTICE-MATCHED TO INP
Authors: BENZAQUEN R CHARBONNEAU S SAWADSKY N ROTH AP LEONELLI R HOBBS L KNIGHT G
Citation: R. Benzaquen et al., ALLOY BROADENING IN PHOTOLUMINESCENCE SPECTRA OF GAXIN1-XASYP1-Y LATTICE-MATCHED TO INP, Journal of applied physics, 75(5), 1994, pp. 2633-2639
BAND ALIGNMENT IN GAXIN1-XP INP HETEROSTRUCTURES
Authors: BENSAADA A GRAHAM JT BREBNER JL CHENNOUF A COCHRANE RW LEONELLI R MASUT RA
Citation: A. Bensaada et al., BAND ALIGNMENT IN GAXIN1-XP INP HETEROSTRUCTURES, Applied physics letters, 64(3), 1994, pp. 273-275
TEMPERATURE-DEPENDENCE OF FREE-EXCITON PHOTOLUMINESCENCE IN CRYSTALLINE GATE
Authors: WAN JZ BREBNER JL LEONELLI R ZHAO G GRAHAM JT
Citation: Jz. Wan et al., TEMPERATURE-DEPENDENCE OF FREE-EXCITON PHOTOLUMINESCENCE IN CRYSTALLINE GATE, Physical review. B, Condensed matter, 48(8), 1993, pp. 5197-5201
OPTICAL AND STRUCTURAL-PROPERTIES OF METALORGANIC-VAPOR-PHASE-EPITAXY-GROWN INAS QUANTUM-WELLS AND QUANTUM DOTS IN INP
Authors: LEONELLI R TRAN CA BREBNER JL GRAHAM JT TABTI R MASUT RA CHARBONNEAU S
Citation: R. Leonelli et al., OPTICAL AND STRUCTURAL-PROPERTIES OF METALORGANIC-VAPOR-PHASE-EPITAXY-GROWN INAS QUANTUM-WELLS AND QUANTUM DOTS IN INP, Physical review. B, Condensed matter, 48(15), 1993, pp. 11135-11143
Risultati: 1-25 | 26-28