AAAAAA
Results: 1-25/32
Authors:
VERSCHUREN CA
HARMSMA PJ
OEI YS
LEYS MR
VONK H
WOLTER JH
Citation: Ca. Verschuren et al., BUTT-COUPLING LOSS OF 0.1DB INTERFACE IN INP/INGAAS MULTIPLE-QUANTUM-WELL WAVE-GUIDE-WAVE-GUIDE STRUCTURES GROWN BY SELECTIVE-AREA CHEMICALBEAM EPITAXY/, Semiconductor science and technology, 13(8A), 1998, pp. 169-172
Authors:
LENSSEN KMH
LEYS MR
WOLTER JH
Citation: Kmh. Lenssen et al., EXPERIMENTAL SIGNATURE OF PHASE-COHERENT ANDREEV REFLECTION, Physical review. B, Condensed matter, 58(8), 1998, pp. 4888-4891
Authors:
VERSCHUREN CA
LEYS MR
MARSCHNER T
VONK H
WOLTER JH
Citation: Ca. Verschuren et al., A MODIFIED BCF MODEL TO QUANTITATIVELY DESCRIBE THE (100)INP GROWTH-RATE IN CHEMICAL BEAM EPITAXY, Journal of crystal growth, 188(1-4), 1998, pp. 11-16
Authors:
VERSCHUREN CA
HARMSMA PJ
OEI YS
LEYS MR
VONK H
WOLTER JH
Citation: Ca. Verschuren et al., BUTT-COUPLING LOSS OF 0.1 DB INTERFACE IN INP/INGAAS MQW WAVE-GUIDE-WAVE-GUIDE STRUCTURES GROWN BY SELECTIVE-AREA CHEMICAL BEAM EPITAXY/, Journal of crystal growth, 188(1-4), 1998, pp. 288-294
Authors:
MARSCHNER T
BRUBACH J
VERSCHUREN CA
LEYS MR
WOLTER JH
Citation: T. Marschner et al., X-RAY INTERFERENCE EFFECT AS A TOOL FOR THE STRUCTURAL INVESTIGATION OF GAINAS INP MULTIPLE-QUANTUM WELLS/, Journal of applied physics, 83(7), 1998, pp. 3630-3637
Authors:
RONGEN RTH
LEYS MR
VANHALL PJ
VONK H
WOLTER JH
Citation: Rth. Rongen et al., HETEROGENEOUS HYDRIDE PYROLYSIS IN A CHEMICAL BEAM EPITAXY CRACKER CELL AND GROWTH OF HIGH-QUALITY INP, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(1), 1997, pp. 29-33
Authors:
RONGEN RTH
VANRIJSWIJK AJC
LEYS MR
VANES CM
VONK H
WOLTER JH
Citation: Rth. Rongen et al., INTERFACE MANIPULATION IN GAXIN1-XAS INP MULTIPLE-LAYER STRUCTURES GROWN BY CHEMICAL BEAM EPITAXY/, Semiconductor science and technology, 12(8), 1997, pp. 974-980
Authors:
VANHALL PJ
KOKTEN H
LEYS MR
BOSCH M
Citation: Pj. Vanhall et al., MONTE-CARLO SIMULATION OF MBE GROWTH OF GAAS ANALYSIS OF RHEED, Surface review and letters, 4(5), 1997, pp. 869-872
Authors:
CHEN XY
HOOGE FN
LEYS MR
Citation: Xy. Chen et al., THE TEMPERATURE-DEPENDENCE OF 1 F NOISE IN INP/, Solid-state electronics, 41(9), 1997, pp. 1269-1275
Authors:
SILOV AY
MARSCHNER T
LEYS MR
HAVERKORT JEM
WOLTER JH
Citation: Ay. Silov et al., CATION SUBLATTICE ORDERING IN GAXIN1-XAS QUANTUM-WELLS - EVIDENCE FROM ELECTRON-PHONON INTERACTION, Physica status solidi. a, Applied research, 164(1), 1997, pp. 145-148
Authors:
MARSCHNER T
TICHELAAR FD
LEYS MR
RONGEN RTH
VERSCHUREN CA
VONK H
WOLTER JH
Citation: T. Marschner et al., EPITAXIAL LAYER MORPHOLOGY OF HIGHLY STRAINED GAINAS INP MULTIPLE-QUANTUM-WELL STRUCTURES GROWN BY CBE/, Microelectronics, 28(8-10), 1997, pp. 849-855
Authors:
MARSCHNER T
RONGEN RTH
LEYS MR
TICHELAAR FD
VONK H
WOLTER JH
Citation: T. Marschner et al., EFFECTS OF TENSILE STRAIN AND SUBSTRATE OFF-ORIENTATION ON THE GROWTHOF GAINAS INP MULTIPLE-QUANTUM-WELL STRUCTURES BY CBE/, Journal of crystal growth, 175, 1997, pp. 1081-1086
Authors:
VERSCHUREN CA
LEYS MR
OEI YS
VREEBURG CGM
VONK H
RONGEN RTH
WOLTER JH
Citation: Ca. Verschuren et al., SURFACE-MORPHOLOGY OF INP INGAAS IN SELECTIVE-AREA GROWTH BY CHEMICALBEAM EPITAXY/, Journal of crystal growth, 170(1-4), 1997, pp. 650-654
Authors:
CHEN XY
LEYS MR
Citation: Xy. Chen et Mr. Leys, STUDY OF 1 F NOISE IN INP GROWN BY CBE, Solid-state electronics, 39(8), 1996, pp. 1149-1153
Authors:
RONGEN RTH
LEYS MR
VONK H
WOLTER JH
OEI YS
Citation: Rth. Rongen et al., SUBSTITUTION OF INP LAYERS TO INAS FOR STRAIN COMPENSATION IN GAXIN1-XAS INP SUPERLATTICES/, Journal of crystal growth, 164(1-4), 1996, pp. 263-270
Authors:
VREEBURG CGM
OEI YS
VERBEEK BH
VANDERTOL JJGM
RONGEN RTH
VONK H
LEYS MR
DORREN BHP
WOLTER JH
Citation: Cgm. Vreeburg et al., STRAINED GAINAS INP MQW LAYERS GROWN BY CBE FOR OPTICAL-COMPONENTS/, Journal of crystal growth, 164(1-4), 1996, pp. 442-448
Authors:
CHRISTIANEN PCM
VANHALL PJ
BLUYSSEN HJA
LEYS MR
DROST L
WOLTER JH
Citation: Pcm. Christianen et al., ULTRAFAST CARRIER DYNAMICS AT A METAL-SEMICONDUCTOR INTERFACE, Journal of applied physics, 80(12), 1996, pp. 6831-6838
Authors:
RONGEN RTH
LEYS MR
VANHALL PJ
VANES CM
VONK H
WOLTER JH
Citation: Rth. Rongen et al., INVESTIGATIONS ON INDIUM-PHOSPHIDE GROWN BY CHEMICAL BEAM EPITAXY, Journal of electronic materials, 24(10), 1995, pp. 1391-1398
Authors:
HOPKINS J
LEYS MR
BRUBACH J
VANDERVLEUTEN WC
WOLTER JH
Citation: J. Hopkins et al., A RHEED STUDY OF THE DYNAMICS OF GAAS AND ALGAAS GROWTH ON A (001) SURFACE BY MBE, Applied surface science, 84(3), 1995, pp. 299-307
Authors:
LEYS MR
RONGEN RTH
HOPKINS J
VONK H
VANES CM
WOLTER JH
TICHELAAR FD
Citation: Mr. Leys et al., GROWTH OF GAXIN1-XAS INP THIN-LAYER STRUCTURES BY CHEMICAL BEAM EPITAXY/, Journal of crystal growth, 150(1-4), 1995, pp. 633-637
Authors:
LENSSEN KMH
WESTERLING LA
JEEKEL PCA
HARMANS CJPM
MOOIJ JE
LEYS MR
VANDERVLEUTEN W
WOLTER JH
BEAUMONT SP
Citation: Kmh. Lenssen et al., ELECTRON-TRANSPORT IN MESOSCOPIC GAAS ALGAAS-STRUCTURES WITH SUPERCONDUCTING CONTACTS/, Physica. B, Condensed matter, 194, 1994, pp. 2413-2414
Authors:
ANINKEVICIUS V
BAREIKIS V
KATILIUS R
KOPEV PS
LEYS MR
LIBERIS J
MATULIONIS A
Citation: V. Aninkevicius et al., HOT-ELECTRON NOISE AND DIFFUSION IN ALGAAS GAAS/, Semiconductor science and technology, 9(5), 1994, pp. 576-579
Authors:
CHRISTIANEN PCM
DEBEKKER EJA
BLUYSSEN HJA
HAGEMAN PR
LEYS MR
Citation: Pcm. Christianen et al., COOLING REDUCTION DUE TO A RAPID DENSITY DECAY OF HOT CARRIERS IN GAAS, Semiconductor science and technology, 9(5), 1994, pp. 713-715
Authors:
LENSSEN KMH
WESTERLING LA
HARMANS CJPM
MOOIJ JE
LEYS MR
VANDERVLEUTEN W
WOLTER JH
Citation: Kmh. Lenssen et al., INFLUENCE OF GATE VOLTAGE ON THE TRANSPORT-PROPERTIES OF SUPERCONDUCTOR 2DEG SYSTEMS, Surface science, 305(1-3), 1994, pp. 476-479
Authors:
CHEN XY
LEYS MR
RAGAY FW
Citation: Xy. Chen et al., LOW-FREQUENCY NOISE IN P-GAAS WITH NONALLOYED CONTACTS(), Electronics Letters, 30(7), 1994, pp. 600-601