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Results:
1-15
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Results: 15
Authors:
KECHOUANE M
BELDI N
MOHAMMEDBRAHIM T
LHARIDON H
SALVI M
GAUNEAU M
FAVENNEC PN
Citation: M. Kechouane et al., OXYGEN ENHANCEMENT OF 1.54 MU-M ER3-SILICON( LUMINESCENCE IN HYDROGENATED AMORPHOUS), Philosophical magazine. B. Physics of condensed matter.Statistical mechanics, electronic, optical and magnetic, 77(1), 1998, pp. 137-145
Authors:
LAMBERT B
LECORRE A
DROUOT V
LHARIDON H
LOUALICHE S
Citation: B. Lambert et al., HIGH PHOTOLUMINESCENCE EFFICIENCY OF INAS INP SELF-ASSEMBLED QUANTUM DOTS EMITTING AT 1.5-1.6 MU-M/, Semiconductor science and technology, 13(1), 1998, pp. 143-145
Authors:
PONCHET A
LECORRE A
LHARIDON H
LAMBERT B
SALAUN S
ALQUIER D
LACOMBE D
DURAND L
Citation: A. Ponchet et al., THE EFFECT OF THE GROWTH PROCEDURE AND THE INAS AMOUNT ON THE FORMATION OF STRAIN-INDUCED ISLANDS IN THE INAS INP(001) SYSTEM/, Applied surface science, 123, 1998, pp. 751-756
Authors:
GRAC R
PUGNET M
COLLET JH
LAMBERT B
DEMATOS C
LHARIDON H
LECORRE A
WHITE JO
Citation: R. Grac et al., PHOTODIFFRACTION IN INGAAS INGAASP MULTIPLE-QUANTUM WELLS ENCLOSED INA MICROCAVITY/, Superlattices and microstructures, 22(4), 1997, pp. 505-509
Authors:
FRECHENGUES S
DROUOT V
LAMBERT B
LEMOINE D
LOUALICHE S
LECORRE A
LHARIDON H
Citation: S. Frechengues et al., DIRECT CORRELATION OF STRUCTURAL AND OPTICAL-PROPERTIES OF INAS SELF-ASSEMBLED DOTS DEPOSITED ON INP(100), Applied physics letters, 71(19), 1997, pp. 2818-2820
Authors:
DEMATOS C
LACORRE A
LHARIDON H
GOSSELIN S
LAMBERT B
Citation: C. Dematos et al., FE-DOPED INGAAS INGAASP PHOTOREFRACTIVE MULTIPLE-QUANTUM-WELL DEVICESOPERATING AT 1.55 MU-M/, Applied physics letters, 70(26), 1997, pp. 3591-3593
Authors:
LECORRE A
DEMATOS C
LHARIDON H
GOSSELIN S
LAMBERT B
Citation: A. Lecorre et al., PHOTOREFRACTIVE MULTIPLE-QUANTUM-WELL DEVICE USING QUANTUM DOTS AS TRAPPING ZONES, Applied physics letters, 70(12), 1997, pp. 1575-1577
Authors:
PONCHET A
LECORRE A
LHARIDON H
LAMBERT B
SALAUN S
GROENEN J
CARLES R
Citation: A. Ponchet et al., STRUCTURAL ASPECTS OF THE GROWTH OF INAS ISLANDS ON INP SUBSTRATE, Solid-state electronics, 40(1-8), 1996, pp. 615-619
Authors:
DEMATOS C
LECORRE A
LHARIDON H
LAMBERT B
SALAUN S
PLEUMEEKERS J
GOSSELIN S
Citation: C. Dematos et al., PHOTOREFRACTIVE P-I-N-DIODE QUANTUM-WELL OPERATING AT 1.55-MU-M, Applied physics letters, 68(25), 1996, pp. 3576-3578
Authors:
CLEROT F
LHARIDON H
LECORRE A
GODEFROY A
SALAUN S
PONCHET A
Citation: F. Clerot et al., SIMULATION AND PHOTOLUMINESCENCE CHARACTERIZATION OF TRANSVERSE ELECTRIC-TRANSVERSE MAGNETIC EMISSION OF STRAINED GA0.47IN0.53AS GA0.62IN0.38AS SUPERLATTICES/, Materials science & engineering. B, Solid-state materials for advanced technology, 31(3), 1995, pp. 293-297
Authors:
PONCHET A
LECORRE A
LHARIDON H
LAMBERT B
SALAUN S
Citation: A. Ponchet et al., RELATIONSHIP BETWEEN SELF-ORGANIZATION AND SIZE OF INAS ISLANDS ON INP(001) GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Applied physics letters, 67(13), 1995, pp. 1850-1852
Authors:
BARRIERE AS
RAOUX S
GARCIA A
LHARIDON H
LAMBERT B
MOUTONNET D
Citation: As. Barriere et al., INTRA-4F-SHELL TRANSITIONS AT ROOM-TEMPERATURE OF ER3-XERXF2+X THIN-FILMS GROWN ON SI(100)( IONS IN CA1), Journal of applied physics, 75(2), 1994, pp. 1133-1137
Authors:
LHARIDON H
LECORRE A
SALAUN S
LECROSNIER D
PASSARET A
GODEFROY A
GAUNEAU M
Citation: H. Lharidon et al., SCANNING PHOTOLUMINESCENCE CHARACTERIZATION OF IRON-DOPED GAS-SOURCE MOLECULAR-BEAM EPITAXY INDIUM-PHOSPHIDE LAYERS, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 82-87
Authors:
CALLEC R
POUDOULEC A
SALVI M
LHARIDON H
FAVENNEC PN
GAUNEAU M
Citation: R. Callec et al., ION-IMPLANTATION DAMAGE AND ANNEALING IN GASB, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 532-537
Authors:
KECHOUANE M
LHARIDON H
SALVI M
FAVENNEC PN
GAUNEAU M
GUILLOUXVIRY M
KARKUT MG
THIVET C
PERRIN A
Citation: M. Kechouane et al., CRYSTALLINE CHARACTERIZATION BY RUTHERFORD BACKSCATTERING SPECTROMETRY AND ELECTRON CHANNELING OF IN-SITU GROWN YBA2CU3O7 THIN-FILMS DEPOSITED ON (100) MGO BY DC SPUTTERING OR LASER-ABLATION, Journal of Materials Science, 28(18), 1993, pp. 4934-4939
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1-15
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