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Results: 1-9 |
Results: 9

Authors: HOUNG YM TAN MRT LIANG BW WANG SY MARS DE
Citation: Ym. Houng et al., IN-SITU THICKNESS MONITORING AND CONTROL FOR HIGHLY REPRODUCIBLE GROWTH OF DISTRIBUTED BRAGG REFLECTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1221-1224

Authors: LIANG BW TU CW
Citation: Bw. Liang et Cw. Tu, GROUP-V COMPOSITION CONTROL FOR INGAASP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of electronic materials, 23(11), 1994, pp. 1251-1254

Authors: TU CW LIANG BW CHIN TP
Citation: Cw. Tu et al., HEAVILY CARBON-DOPED P-TYPE GAAS AND IN0.53GA0.47AS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY USING CARBON TETRABROMIDE, Journal of crystal growth, 136(1-4), 1994, pp. 191-194

Authors: HOUNG YM TAN MRT LIANG BW WANG SY YANG L MARS DE
Citation: Ym. Houng et al., INGAAS(0.98 MU-M) GAAS VERTICAL-CAVITY SURFACE-EMITTING LASER GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 136(1-4), 1994, pp. 216-220

Authors: CHEN WM DRESZER P PRASAD A KURPIEWSKI A WALUKIEWICZ W WEBER ER SORMAN E MONEMAR B LIANG BW TU CW
Citation: Wm. Chen et al., ORIGIN OF N-TYPE CONDUCTIVITY OF LOW-TEMPERATURE-GROWN INP, Journal of applied physics, 76(1), 1994, pp. 600-602

Authors: DRESZER P CHEN WM WASIK D LEON R WALUKIEWICZ W LIANG BW TU CW WEBER ER
Citation: P. Dreszer et al., ELECTRONIC-PROPERTIES OF LOW-TEMPERATURE INP, Journal of electronic materials, 22(12), 1993, pp. 1487-1490

Authors: CHEN WM DRESZER P WEBER ER SORMAN E MONEMAR B LIANG BW TU CW
Citation: Wm. Chen et al., OPTICALLY DETECTED MAGNETIC-RESONANCE STUDIES OF LOW-TEMPERATURE INP, Journal of electronic materials, 22(12), 1993, pp. 1491-1494

Authors: TU CW LIANG BW HOU HQ
Citation: Cw. Tu et al., GROWTH-KINETICS AND INSITU COMPOSITION DETERMINATION OF MIXED-GROUP-VCOMPOUNDS GROWN BY GAS-SOURCE MOLELCULAR BEAM EPITAXY, Journal of crystal growth, 127(1-4), 1993, pp. 251-254

Authors: LIANG BW TU CW
Citation: Bw. Liang et Cw. Tu, A KINETIC-MODEL FOR AS AND P-INCORPORATION BEHAVIORS IN GAASP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of applied physics, 74(1), 1993, pp. 255-259
Risultati: 1-9 |