Authors:
HOUNG YM
TAN MRT
LIANG BW
WANG SY
MARS DE
Citation: Ym. Houng et al., IN-SITU THICKNESS MONITORING AND CONTROL FOR HIGHLY REPRODUCIBLE GROWTH OF DISTRIBUTED BRAGG REFLECTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1221-1224
Citation: Bw. Liang et Cw. Tu, GROUP-V COMPOSITION CONTROL FOR INGAASP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of electronic materials, 23(11), 1994, pp. 1251-1254
Citation: Cw. Tu et al., HEAVILY CARBON-DOPED P-TYPE GAAS AND IN0.53GA0.47AS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY USING CARBON TETRABROMIDE, Journal of crystal growth, 136(1-4), 1994, pp. 191-194
Authors:
HOUNG YM
TAN MRT
LIANG BW
WANG SY
YANG L
MARS DE
Citation: Ym. Houng et al., INGAAS(0.98 MU-M) GAAS VERTICAL-CAVITY SURFACE-EMITTING LASER GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 136(1-4), 1994, pp. 216-220
Authors:
CHEN WM
DRESZER P
WEBER ER
SORMAN E
MONEMAR B
LIANG BW
TU CW
Citation: Wm. Chen et al., OPTICALLY DETECTED MAGNETIC-RESONANCE STUDIES OF LOW-TEMPERATURE INP, Journal of electronic materials, 22(12), 1993, pp. 1491-1494
Citation: Cw. Tu et al., GROWTH-KINETICS AND INSITU COMPOSITION DETERMINATION OF MIXED-GROUP-VCOMPOUNDS GROWN BY GAS-SOURCE MOLELCULAR BEAM EPITAXY, Journal of crystal growth, 127(1-4), 1993, pp. 251-254
Citation: Bw. Liang et Cw. Tu, A KINETIC-MODEL FOR AS AND P-INCORPORATION BEHAVIORS IN GAASP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of applied physics, 74(1), 1993, pp. 255-259