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Results: 26-50/85
Authors:
CHUANG FY
SUN CY
CHENG HF
WANG WC
LIN IN
Citation: Fy. Chuang et al., EFFECT OF MORPHOLOGY ON ELECTRON-EMISSION CHARACTERISTICS OF PULSED-LASER DEPOSITED DIAMOND-LIKE FILMS, Applied surface science, 114, 1997, pp. 259-263
Authors:
LEE JS
LIU KS
CHUANG FY
SUN CY
HUANG CM
LIN IN
Citation: Js. Lee et al., EFFECT OF AU BUFFER ON THE FIELD-EMISSION CHARACTERISTICS OF CHEMICAL-VAPOR-DEPOSITED DIAMOND FILMS, Applied surface science, 114, 1997, pp. 264-268
Authors:
LIN GL
LUE JT
CHEN CL
LIN IN
Citation: Gl. Lin et al., RAMAN STUDIES OF DIAMOND FILM GROWTH ON FUSE-SILICA SUBSTRATES BY A MULTISTEP PROCESS, Thin solid films, 301(1-2), 1997, pp. 126-133
Authors:
LEE JS
LIU KS
LIN IN
Citation: Js. Lee et al., EFFECT OF SUBSTRATE MATERIALS ON THE ELECTRON FIELD-EMISSION CHARACTERISTICS OF CHEMICAL-VAPOR-DEPOSITED DIAMOND FILMS, Journal of applied physics, 82(7), 1997, pp. 3310-3313
Authors:
LEE JS
LIU KS
LIN IN
Citation: Js. Lee et al., DEPOSITION OF DIAMOND FILMS ON SIO2 SURFACES USING A HIGH-POWER MICROWAVE ENHANCED CHEMICAL-VAPOR-DEPOSITION PROCESS, Journal of applied physics, 81(1), 1997, pp. 486-491
Authors:
LIN CH
CHANG HY
LIN IN
Citation: Ch. Lin et al., DENSIFICATION BEHAVIOR OF Y3FE5O12 MATERIALS PREPARED BY MICROWAVE SINTERING PROCESS, IEEE transactions on magnetics, 33(5), 1997, pp. 3415-3417
Authors:
CHANG HY
CHEN HW
HU CT
LIN IN
Citation: Hy. Chang et al., HIGH T-C POSITIVE TEMPERATURE-COEFFICIENT RESISTIVITY (PB0.6SR0.3BA0.1)TIO3 MATERIALS PREPARED BY MICROWAVE SINTERING, Ferroelectrics, 195(1-4), 1997, pp. 65-68
Authors:
LEE JS
LIU KS
LIN IN
Citation: Js. Lee et al., ELECTRON FIELD-EMISSION CHARACTERISTICS OF PLANAR DIAMOND FILM ARRAY SYNTHESIZED BY CHEMICAL-VAPOR-DEPOSITION PROCESS, Applied physics letters, 71(4), 1997, pp. 554-556
Authors:
CHUANG FY
SUN CY
CHENG HF
LIN IN
Citation: Fy. Chuang et al., ENHANCEMENT ON FIELD-EMISSION CHARACTERISTICS OF PULSED-LASER DEPOSITED DIAMOND-LIKE CARBON-FILMS USING AU PRECOATINGS, Applied physics letters, 70(16), 1997, pp. 2111-2113
Authors:
TSENG TF
YANG RP
LIU KS
LIN IN
Citation: Tf. Tseng et al., FERROELECTRIC PROPERTIES OF (PB0.97LA0.03)(ZR0.66TI0.34)O-3 FILMS DEPOSITED ON SI3N4-COATED SI SUBSTRATES BY PULSED-LASER DEPOSITION PROCESS, Applied physics letters, 70(1), 1997, pp. 46-48
Authors:
TSENG TF
LIU KS
LIN IN
WANG JP
LING YC
Citation: Tf. Tseng et al., GROWTH-BEHAVIOR OF PULSED-LASER-DEPOSITED PLZTO THIN-FILMS, AIChE journal, 43(11), 1997, pp. 2857-2864
Authors:
CHEN CS
KUO CT
LIN IN
Citation: Cs. Chen et al., ELECTRICAL-PROPERTIES OF ZNO VARISTORS PREPARED BY MICROWAVE SINTERING PROCESS, JPN J A P 1, 35(9A), 1996, pp. 4696-4703
Authors:
TSENG TF
YANG CC
LIU KS
WU JM
WU TB
LIN IN
Citation: Tf. Tseng et al., CRYSTALLIZATION CHARACTERISTICS OF LANIO3 LAYERS AND THEIR EFFECT ON PULSED-LASER DEPOSITED (PB1-XLAX)(ZRYTI1-Y)O-3 THIN-FILMS, JPN J A P 1, 35(9A), 1996, pp. 4743-4749
Authors:
CHANG HY
LIU KS
HU CT
LIN IN
Citation: Hy. Chang et al., ELECTRICAL-PROPERTIES OF MICROWAVE-SINTERED (SR0.4PB0.6)TIO3 CERAMICS, JPN J A P 1, 35(2A), 1996, pp. 656-662
Authors:
CHANG HY
LIN YY
LIU KS
HU CT
LIN TF
LIN IN
Citation: Hy. Chang et al., ABNORMAL RESISTIVITY-TEMPERATURE CHARACTERISTICS OF SEMICONDUCTING (BA1-XPBX)TIO3 MATERIALS PREPARED BY MICROWAVE SINTERING, Integrated ferroelectrics, 13(1-3), 1996, pp. 339-346
Authors:
CHANG HY
LIN YY
HU CT
LIU KS
LIN IN
Citation: Hy. Chang et al., MODIFICATION ON PTCR BEHAVIOR OF (SR0.2BA0.8)TIO3 MATERIALS BY POST-HEAT TREATMENT AFTER MICROWAVE SINTERING, Integrated ferroelectrics, 13(1-3), 1996, pp. 347-354
Authors:
CHENG HF
HU CT
LIN IN
Citation: Hf. Cheng et al., ON THE ORIGIN OF NEGATIVE TEMPERATURE-COEFFICIENT OF RESISTIVITY IN (PB1-XSRX)TIO3 CERAMICS, Integrated ferroelectrics, 13(1-3), 1996, pp. 355-362
Authors:
LIN WJ
TSENG TY
WU YZ
LIN SP
TU SL
CHANG H
YANG SJ
LIN IN
Citation: Wj. Lin et al., GROWTH AND FATIGUE PROPERTIES OF PULSED-LASER DEPOSITED PB1-XLAX(ZRYTIZ)O-3 THIN-FILMS WITH [001] PREFERRED ORIENTATION, Journal of materials science. Materials in electronics, 7(6), 1996, pp. 409-417
Authors:
CHANG HY
LIU KS
LIN IN
Citation: Hy. Chang et al., MODIFICATION OF PTCR BEHAVIOR OF (SR0-CENTER-DOT-2BA0-CENTER-DOT-8)TIO3, MATERIALS BY POST-HEAT TREATMENT AFTER MICROWAVE SINTERING, Journal of the European Ceramic Society, 16(1), 1996, pp. 63-70
Authors:
CHUNG BC
TSAI CH
HSU SS
HUANG CS
TSENG TY
LIN IN
Citation: Bc. Chung et al., SPECTROSCOPIC STUDY OF THE MICROWAVE PLASMA-ENHANCED PULSED-LASER DEPOSITION FOR Y1BA2CU3O7-X SUPERCONDUCTING THIN-FILMS, Applied surface science, 96-8, 1996, pp. 233-237
Authors:
HUANG CS
TSENG TY
CHUNG BC
TSAI CH
CHENG HF
LIN IN
Citation: Cs. Huang et al., MIRROR-SMOOTH YBA2CU3O7-X SUPERCONDUCTING FILMS DEPOSITED BY PLASMA-ENHANCED PULSED-LASER DEPOSITION TECHNIQUE, Applied surface science, 96-8, 1996, pp. 735-738
Authors:
CHUANG FY
LIN CT
SUN CY
CHENG HF
LIN IN
Citation: Fy. Chuang et al., ELECTRICAL-PROPERTIES OF LASER-DEPOSITED YBA2CU3O7-DELTA FILMS ON SILICON-WAFERS, Applied surface science, 92, 1996, pp. 452-456
Authors:
TSENG TF
YEH MH
LIU KS
LIN IN
Citation: Tf. Tseng et al., EFFECTS OF AMBIENT GAS-PRESSURE ON (1-X)SRTIO3-XBATIO(3) FILMS PREPARED BY PULSED-LASER DEPOSITION, Journal of applied physics, 80(9), 1996, pp. 4984-4989
Authors:
CHANG HY
LIU KS
HU CT
LIN TF
LIN IN
Citation: Hy. Chang et al., DOUBLE CRITICAL-TEMPERATURE CHARACTERISTICS OF SEMICONDUCTING (BA0.7PB0.3)TIO3 MATERIALS PREPARED BY MICROWAVE SINTERING, Journal of applied physics, 80(8), 1996, pp. 4553-4559
Authors:
LIU CS
WU JM
LIN IN
CHEN CJ
Citation: Cs. Liu et al., HIGH-POWER-USE MN-ZN FERRITES WITH MONODOMAIN STRUCTURE PREPARED BY LOW-TEMPERATURE SINTERING, Journal of applied physics, 79(8), 1996, pp. 5432-5434