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Results:
1-19
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Results: 19
Authors:
KONSTANTINOV AO
WAHAB Q
NORDELL N
LINDEFELT U
Citation: Ao. Konstantinov et al., STUDY OF AVALANCHE BREAKDOWN AND IMPACT IONIZATION IN 4H SILICON-CARBIDE, Journal of electronic materials, 27(4), 1998, pp. 335-341
Authors:
LINDEFELT U
Citation: U. Lindefelt, DOPING-INDUCED BAND-EDGE DISPLACEMENTS AND BAND-GAP NARROWING IN 3C-SIC, 4H-SIC, 6H-SIC, AND SI, Journal of applied physics, 84(5), 1998, pp. 2628-2637
Authors:
PERSSON C
LINDEFELT U
Citation: C. Persson et U. Lindefelt, DENSITY-OF-STATES IN HEXAGONAL SIC POLYTYPES, Journal of applied physics, 83(1), 1998, pp. 266-269
Authors:
KONSTANTINOV AO
NORDELL N
WAHAB Q
LINDEFELT U
Citation: Ao. Konstantinov et al., TEMPERATURE-DEPENDENCE OF AVALANCHE BREAKDOWN FOR EPITAXIAL DIODES IN4H SILICON-CARBIDE, Applied physics letters, 73(13), 1998, pp. 1850-1852
Authors:
HENRY A
IVANOV IG
EGILSSON T
HALLIN C
ELLISON A
KORDINA O
LINDEFELT U
JANZEN E
Citation: A. Henry et al., HIGH-QUALITY 4H-SIC GROWN ON VARIOUS SUBSTRATE ORIENTATIONS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1289-1292
Authors:
BAKOWSKI M
GUSTAFSSON U
LINDEFELT U
Citation: M. Bakowski et al., SIMULATION OF SIC HIGH-POWER DEVICES, Physica status solidi. a, Applied research, 162(1), 1997, pp. 421-440
Authors:
PERSSON C
LINDEFELT U
Citation: C. Persson et U. Lindefelt, RELATIVISTIC BAND-STRUCTURE CALCULATION OF CUBIC AND HEXAGONAL SIC POLYTYPES, Journal of applied physics, 82(11), 1997, pp. 5496-5508
Authors:
GALECKAS A
LINNROS J
GRIVICKAS V
LINDEFELT U
HALLIN C
Citation: A. Galeckas et al., AUGER RECOMBINATION IN 4H-SIC - UNUSUAL TEMPERATURE BEHAVIOR, Applied physics letters, 71(22), 1997, pp. 3269-3271
Authors:
KONSTANTINOV AO
WAHAB Q
NORDELL N
LINDEFELT U
Citation: Ao. Konstantinov et al., IONIZATION RATES AND CRITICAL FIELDS IN 4H SILICON-CARBIDE, Applied physics letters, 71(1), 1997, pp. 90-92
Authors:
PERSSON C
LINDEFELT U
Citation: C. Persson et U. Lindefelt, DETAILED BAND-STRUCTURE FOR 3C-SIC, 2H-SIC, 4H-SIC, 6H-SIC, AND SI AROUND THE FUNDAMENTAL-BAND GAP, Physical review. B, Condensed matter, 54(15), 1996, pp. 10257-10260
Authors:
VOLM D
MEYER BK
HOFMANN DM
CHEN WM
SON NT
PERSSON C
LINDEFELT U
KORDINA O
SORMAN E
KONSTANTINOV AO
MONEMAR B
JANZEN E
Citation: D. Volm et al., DETERMINATION OF THE ELECTRON EFFECTIVE-MASS TENSOR IN 4H SIC, Physical review. B, Condensed matter, 53(23), 1996, pp. 15409-15412
Authors:
HENRY A
HALLIN C
IVANOV IG
BERGMAN JP
KORDINA O
LINDEFELT U
JANZEN E
Citation: A. Henry et al., GA-BOUND EXCITONS IN 3C-SIC, 4H-SIC, AND 6H-SIC, Physical review. B, Condensed matter, 53(20), 1996, pp. 13503-13506
Authors:
JOHANSSON LI
OWMAN F
MARTENSSON P
PERSSON C
LINDEFELT U
Citation: Li. Johansson et al., ELECTRONIC-STRUCTURE OF 6H-SIC(0001), Physical review. B, Condensed matter, 53(20), 1996, pp. 13803-13807
Authors:
TORNBLAD O
LINDEFELT U
BREITHOLTZ B
Citation: O. Tornblad et al., HEAT-GENERATION IN SI BIPOLAR POWER DEVICES - THE RELATIVE IMPORTANCEOF VARIOUS CONTRIBUTIONS, Solid-state electronics, 39(10), 1996, pp. 1463-1471
Authors:
KORDINA O
BERGMAN JP
HENRY A
JANZEN E
SAVAGE S
ANDRE J
RAMBERG LP
LINDEFELT U
HERMANSSON W
BERGMAN K
Citation: O. Kordina et al., A 4.5 KV 6H SILICON-CARBIDE RECTIFIER, Applied physics letters, 67(11), 1995, pp. 1561-1563
Authors:
TORNBLAD O
BREITHOLTZ B
OSTLING M
LINDEFELT U
Citation: O. Tornblad et al., THE INFLUENCE OF EMITTER PROPERTIES ON THE HEAT-GENERATION IN SIC ANDSI PIN DIODES UNDER FORWARD CONDUCTION, Physica scripta. T, 54, 1994, pp. 60-64
Authors:
LINDEFELT U
Citation: U. Lindefelt, EQUATIONS FOR ELECTRICAL AND ELECTROTHERMAL SIMULATION OF ANISOTROPICSEMICONDUCTORS, Journal of applied physics, 76(7), 1994, pp. 4164-4167
Authors:
LINDEFELT U
Citation: U. Lindefelt, HEAT-GENERATION IN SEMICONDUCTOR-DEVICES, Journal of applied physics, 75(2), 1994, pp. 942-957
Authors:
LINDEFELT U
Citation: U. Lindefelt, CURRENT-DENSITY RELATIONS FOR NONISOTHERMAL MODELING OF DEGENERATE HETEROSTRUCTURE DEVICES, Journal of applied physics, 75(2), 1994, pp. 958-966
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