AAAAAA

   
Results: 1-11 |
Results: 11

Authors: CHEN J STECKL AJ LOBODA MJ
Citation: J. Chen et al., MOLECULAR-BEAM EPITAXY GROWTH OF SIC ON SI(111) FROM SILACYCLOBUTANE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1305-1308

Authors: LOBODA MJ TOSKEY GA
Citation: Mj. Loboda et Ga. Toskey, UNDERSTANDING HYDROGEN SILSESQUIOXANE-BASED DIELECTRIC FILM PROCESSING, Solid state technology, 41(5), 1998, pp. 99

Authors: LOBODA MJ GROVE CM SCHNEIDER RF
Citation: Mj. Loboda et al., PROPERTIES OF A-SIOX-H THIN-FILMS DEPOSITED FROM HYDROGEN SILSESQUIOXANE RESINS, Journal of the Electrochemical Society, 145(8), 1998, pp. 2861-2866

Authors: LOBODA MJ SEIFFERLY JA
Citation: Mj. Loboda et Ja. Seifferly, CHEMICAL INFLUENCE OF INERT-GAS ON THE THIN-FILM STRESS IN PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED ALPHA-SIN-H FILMS, Journal of materials research, 11(2), 1996, pp. 391-398

Authors: YUAN C STECKL AJ CHAUDHURI J THOKALA R LOBODA MJ
Citation: C. Yuan et al., REDUCED TEMPERATURE GROWTH OF CRYSTALLINE 3C-SIC FILMS ON GH-SIC BY CHEMICAL-VAPOR-DEPOSITION FROM SILACYCLOBUTANE, Journal of applied physics, 78(2), 1995, pp. 1271-1273

Authors: MONTRESS GK PARKER TE LOBODA MJ
Citation: Gk. Montress et al., RESIDUAL PHASE NOISE MEASUREMENTS OF VHF, UHF, AND MICROWAVE COMPONENTS, IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 41(5), 1994, pp. 664-679

Authors: LOBODA MJ SEIFFERLY JA DALL FC
Citation: Mj. Loboda et al., PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF A-SIC-H FILMS FROM ORGANOSILICON PRECURSORS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(1), 1994, pp. 90-96

Authors: STECKL AJ YUAN C TONG QY GOSELE U LOBODA MJ
Citation: Aj. Steckl et al., SIC SILICON-ON-INSULATOR STRUCTURES BY DIRECT CARBONIZATION CONVERSION AND POSTGROWTH FROM SILACYCLOBUTANE, Journal of the Electrochemical Society, 141(6), 1994, pp. 120000066-120000068

Authors: YUAN C STECKL AJ LOBODA MJ
Citation: C. Yuan et al., EFFECT OF CARBONIZATION ON THE GROWTH OF 3C-SIC ON SI (111) BY SILACYCLOBUTANE, Applied physics letters, 64(22), 1994, pp. 3000-3002

Authors: LOBODA MJ FERBER MK
Citation: Mj. Loboda et Mk. Ferber, CHARACTERIZATION OF THE MECHANICAL-PROPERTIES OF A-SICH FILMS, Journal of materials research, 8(11), 1993, pp. 2908-2915

Authors: STECKL AJ YUAN C LI JP LOBODA MJ
Citation: Aj. Steckl et al., GROWTH OF CRYSTALLINE 3C-SIC ON SI AT REDUCED TEMPERATURES BY CHEMICAL-VAPOR-DEPOSITION FROM SILACYCLOBUTANE, Applied physics letters, 63(24), 1993, pp. 3347-3349
Risultati: 1-11 |