Authors: DETCHEVERRY C ECOFFET R DUZELLIER S LORFEVRE E BRUGUIER G BARAK J LIFSHITZ Y PALAU JM GASIOT J

Citation: C. Detcheverry et al., SEU SENSITIVE DEPTH IN A SUBMICRON SRAM TECHNOLOGY, IEEE transactions on nuclear science, 45(3), 1998, pp. 1612-1616

Authors: LORFEVRE E SUDRE C DACHS C DETCHEVERRY C PALAU JM GASIOT J CALVET MC GARNIER J ECOFFET R

Citation: E. Lorfevre et al., SEB OCCURRENCE IN A VIP - INFLUENCE OF THE EPI-SUBSTRATE JUNCTION, IEEE transactions on nuclear science, 45(3), 1998, pp. 1624-1627

Authors: DETCHEVERRY C DACHS C LORFEVRE E SUDRE C BRUGUIER G PALAU JM GASIOT J ECOFFET R

Citation: C. Detcheverry et al., SEU CRITICAL CHARGE AND SENSITIVE AREA IN A SUBMICRON CMOS TECHNOLOGY, IEEE transactions on nuclear science, 44(6), 1997, pp. 2266-2273

Authors: LORFEVRE E DACHS C DETCHEVERRY C PALAU JM GASIOT J ROUBAUD F CALVET MC ECOFFET R

Citation: E. Lorfevre et al., HEAVY-ION-INDUCED FAILURES IN A POWER IGBT, IEEE transactions on nuclear science, 44(6), 1997, pp. 2353-2357

Authors: ALLENSPACH M DACHS C JOHNSON GH SCHRIMPF RD LORFEVRE E PALAU JM BREWS JR GALLOWAY KF TITUS JL WHEATLEY CF

Citation: M. Allenspach et al., SEGR AND SEB IN N-CHANNEL POWER MOSFETS, IEEE transactions on nuclear science, 43(6), 1996, pp. 2927-2931