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Results: 1-25 | 26-50
Results: 1-25/50
DEPLETION MODE GAAS METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH GA2O3(GD2O3) AS THE GATE OXIDE
Authors: HONG M REN F KUO JM HOBSON WS KWO J MANNAERTS JP LOTHIAN JR CHEN YK
Citation: M. Hong et al., DEPLETION MODE GAAS METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH GA2O3(GD2O3) AS THE GATE OXIDE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1398-1400
OPTIMIZATION OF THE ALUMINUM COMPOSITION IN IN-0.5(ALXGA1-X)(0.5) P/IN0.2GA0.8AS HIGH-ELECTRON-MOBILITY TRANSISTORS FOR POWER APPLICATIONS/
Authors: KUO JM WANG YC LOTHIAN JR TSAI HS CHEN YK MAYO WE
Citation: Jm. Kuo et al., OPTIMIZATION OF THE ALUMINUM COMPOSITION IN IN-0.5(ALXGA1-X)(0.5) P/IN0.2GA0.8AS HIGH-ELECTRON-MOBILITY TRANSISTORS FOR POWER APPLICATIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1404-1407
GA2O3(GD2O3) INGAAS ENHANCEMENT-MODE N-CHANNEL MOSFETS/
Authors: REN F KUO JM HONG M HOBSON WS LOTHIAN JR LIN J TSAI HS MANNAERTS JP KWO J CHU SNG CHEN YK CHO AY
Citation: F. Ren et al., GA2O3(GD2O3) INGAAS ENHANCEMENT-MODE N-CHANNEL MOSFETS/, IEEE electron device letters, 19(8), 1998, pp. 309-311
SOME NEW STYLIZED FACTS OF FLOATING EXCHANGE-RATES
Authors: LOTHIAN JR
Citation: Jr. Lothian, SOME NEW STYLIZED FACTS OF FLOATING EXCHANGE-RATES, Journal of international money and finance, 17(1), 1998, pp. 29-39
SCHOTTKY-BARRIER HEIGHTS OF IN-0.5(ALXGA1-X)(0.5)P (0 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 1) LATTICE-MATCHED TO GAAS
Authors: WANG YC KUO JM REN F LOTHIAN JR MAYO WE
Citation: Yc. Wang et al., SCHOTTKY-BARRIER HEIGHTS OF IN-0.5(ALXGA1-X)(0.5)P (0 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 1) LATTICE-MATCHED TO GAAS, Solid-state electronics, 42(6), 1998, pp. 1045-1048
EFFECT OF HIGH-DENSITY H-2 PLASMAS ON INGAP GAAS AND ALGAAS/GAAS HEMTS/
Authors: REN F KOPF RF KUO JM LOTHIAN JR LEE JW PEARTON SJ SHUL RJ CONSTANTINE C JOHNSON D
Citation: F. Ren et al., EFFECT OF HIGH-DENSITY H-2 PLASMAS ON INGAP GAAS AND ALGAAS/GAAS HEMTS/, Solid-state electronics, 42(5), 1998, pp. 749-753
MONETARY-POLICY, A MARKET PRICE APPROACH - JOHNSON,MH, KELEHER,RE
Authors: LOTHIAN JR
Citation: Jr. Lothian, MONETARY-POLICY, A MARKET PRICE APPROACH - JOHNSON,MH, KELEHER,RE, Journal of economic literature, 36(2), 1998, pp. 950-951
AN IN-0.5(AL0.3GA0.7)(0.5)P IN0.2GA0.8AS POWER HEMT WITH 65.2-PERCENTPOWER-ADDED EFFICIENCY UNDER 1.2V OPERATION/
Authors: WANG YC KUO JM LOTHIAN JR REN F TSAI HS WEINER JS LIN J TATE A CHEN YK MAYO WE
Citation: Yc. Wang et al., AN IN-0.5(AL0.3GA0.7)(0.5)P IN0.2GA0.8AS POWER HEMT WITH 65.2-PERCENTPOWER-ADDED EFFICIENCY UNDER 1.2V OPERATION/, Electronics Letters, 34(6), 1998, pp. 594-595
THERMAL-STABILITY OF W AND WSIX CONTACTS ON P-GAN
Authors: CAO XA PEARTON SJ REN F LOTHIAN JR
Citation: Xa. Cao et al., THERMAL-STABILITY OF W AND WSIX CONTACTS ON P-GAN, Applied physics letters, 73(7), 1998, pp. 942-944
SINGLE-HETEROJUNCTION AND DOUBLE-HETEROJUNCTION PSEUDOMORPHIC IN-0.5(AL0.3GA0.7)(0.5)P IN0.2GA0.8 AS HIGH-ELECTRON-MOBILITY TRANSISTORS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/
Authors: WANG YC KUO JM REN F LOTHIAN JR WEINER JS LIN J MAYO WE CHEN YK
Citation: Yc. Wang et al., SINGLE-HETEROJUNCTION AND DOUBLE-HETEROJUNCTION PSEUDOMORPHIC IN-0.5(AL0.3GA0.7)(0.5)P IN0.2GA0.8 AS HIGH-ELECTRON-MOBILITY TRANSISTORS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, IEEE electron device letters, 18(11), 1997, pp. 550-552
EFFECT OF DRY-ETCHING ON SURFACE-PROPERTIES OF III-NITRIDES
Authors: REN F LOTHIAN JR PEARTON SJ ABERNATHY CR VARTULI CB MACKENZIE JD WILSON RG KARLICEK RF
Citation: F. Ren et al., EFFECT OF DRY-ETCHING ON SURFACE-PROPERTIES OF III-NITRIDES, Journal of electronic materials, 26(11), 1997, pp. 1287-1291
PAPERS IN HONOR OF MCMAHON,PATRICK,C
Authors: BAILLIE RT GIRARDIN E LOTHIAN JR MCFARLAND JW
Citation: Rt. Baillie et al., PAPERS IN HONOR OF MCMAHON,PATRICK,C, Journal of international money and finance, 16(6), 1997, pp. 879-883
REAL EXCHANGE-RATE BEHAVIOR
Authors: LOTHIAN JR TAYLOR MP
Citation: Jr. Lothian et Mp. Taylor, REAL EXCHANGE-RATE BEHAVIOR, Journal of international money and finance, 16(6), 1997, pp. 945-954
MULTICOUNTRY EVIDENCE ON THE BEHAVIOR OF PURCHASING POWER PARITY UNDER THE CURRENT FLOAT
Authors: LOTHIAN JR
Citation: Jr. Lothian, MULTICOUNTRY EVIDENCE ON THE BEHAVIOR OF PURCHASING POWER PARITY UNDER THE CURRENT FLOAT, Journal of international money and finance, 16(1), 1997, pp. 19-35
PT TI/PT/AU SCHOTTKY CONTACTS ON INGAP/GAAS HEMTS/
Authors: LOTHIAN JR REN F KUO JM WEINER JS CHEN YK
Citation: Jr. Lothian et al., PT TI/PT/AU SCHOTTKY CONTACTS ON INGAP/GAAS HEMTS/, Solid-state electronics, 41(5), 1997, pp. 673-675
HIGH-PERFORMANCE PSEUDOMORPHIC INGAP INGAAS POWER HEMTS/
Authors: REN F LOTHIAN JR TSAI HS KUO JM LIN J WEINER JS RYAN RW TATE A CHEN YK
Citation: F. Ren et al., HIGH-PERFORMANCE PSEUDOMORPHIC INGAP INGAAS POWER HEMTS/, Solid-state electronics, 41(12), 1997, pp. 1913-1915
DEMONSTRATION OF ENHANCEMENT-MODE P-CHANNEL AND M-CHANNEL GAAS MOSFETS WITH GA2O3(GD2O3) AS GATE OXIDE
Authors: REN F HONG M HOBSON WS KUO JM LOTHIAN JR MANNAERTS JP KWO J CHU SNG CHEN YK CHO AY
Citation: F. Ren et al., DEMONSTRATION OF ENHANCEMENT-MODE P-CHANNEL AND M-CHANNEL GAAS MOSFETS WITH GA2O3(GD2O3) AS GATE OXIDE, Solid-state electronics, 41(11), 1997, pp. 1751-1753
INTERNATIONAL CAPITAL-MARKETS AND AMERICAN ECONOMIC-GROWTH 1820-1914 - DAVIS,LE, CULL,RJ
Authors: LOTHIAN JR
Citation: Jr. Lothian, INTERNATIONAL CAPITAL-MARKETS AND AMERICAN ECONOMIC-GROWTH 1820-1914 - DAVIS,LE, CULL,RJ, The Journal of interdisciplinary history, 28(1), 1997, pp. 152-155
WET CHEMICAL AND PLASMA-ETCHING OF GA2O3(GD2O3)
Authors: REN F HONG M MANNAERTS JP LOTHIAN JR CHO AY
Citation: F. Ren et al., WET CHEMICAL AND PLASMA-ETCHING OF GA2O3(GD2O3), Journal of the Electrochemical Society, 144(9), 1997, pp. 239-241
BCL3 N-2 DRY-ETCHING OF INP, INALP, AND INGAP
Authors: REN F LOTHIAN JR KUO JM HOBSON WS LOPATA J CABALLERO JA PEARTON SJ COLE MW
Citation: F. Ren et al., BCL3 N-2 DRY-ETCHING OF INP, INALP, AND INGAP, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1758-1763
ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING OF INP AND RELATED MATERIALS IN BCL3
Authors: REN F HOBSON WS KUO JM LOTHIAN JR LOPATA J PEARTON SJ CABALLERO JA
Citation: F. Ren et al., ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING OF INP AND RELATED MATERIALS IN BCL3, Solid-state electronics, 39(5), 1996, pp. 695-698
PASSIVATION OF CARBON DOPING IN INGAAS DURING ECR-CVD OF SINX
Authors: REN F HAMM RA LOTHIAN JR WILSON RG PEARTON SJ
Citation: F. Ren et al., PASSIVATION OF CARBON DOPING IN INGAAS DURING ECR-CVD OF SINX, Solid-state electronics, 39(5), 1996, pp. 763-765
PLASMA DAMAGE EFFECTS IN INALN FIELD-EFFECT TRANSISTORS
Authors: REN F LOTHIAN JR MACKENZIE JD ABERNATHY CR VARTULI CB PEARTON SJ WILSON RG
Citation: F. Ren et al., PLASMA DAMAGE EFFECTS IN INALN FIELD-EFFECT TRANSISTORS, Solid-state electronics, 39(12), 1996, pp. 1747-1752
REAL EXCHANGE-RATE BEHAVIOR - THE RECENT FLOAT FROM THE PERSPECTIVE OF THE PAST 2 CENTURIES
Authors: LOTHIAN JR TAYLOR MP
Citation: Jr. Lothian et Mp. Taylor, REAL EXCHANGE-RATE BEHAVIOR - THE RECENT FLOAT FROM THE PERSPECTIVE OF THE PAST 2 CENTURIES, Journal of political economy, 104(3), 1996, pp. 488-509
A SURFACE MODIFICATION STUDY OF INGAP ETCHED WITH AN ELECTRON-CYCLOTRON-RESONANCE SOURCE AT VARIABLE MICROWAVE POWERS
Authors: COLE MW HAN WY PFEFFER RL ECKART DW REN F HOBSON WS LOTHIAN JR LOPATA J CABALLERO JA PEARTON SJ
Citation: Mw. Cole et al., A SURFACE MODIFICATION STUDY OF INGAP ETCHED WITH AN ELECTRON-CYCLOTRON-RESONANCE SOURCE AT VARIABLE MICROWAVE POWERS, Journal of applied physics, 79(6), 1996, pp. 3286-3289
Risultati: 1-25 | 26-50