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Results: 1-25 | 26-29
Results: 1-25/29
Unambiguous identification of the Si 2p surface core-level shifts in Sb and Ag terminated silicon surfaces studied with high energy resolution photoemission
Authors: Quaresima, C Cricenti, A Ottaviani, C Perfetti, P Le Lay, G
Citation: C. Quaresima et al., Unambiguous identification of the Si 2p surface core-level shifts in Sb and Ag terminated silicon surfaces studied with high energy resolution photoemission, J ALLOY COM, 328(1-2), 2001, pp. 187-192
Electronic structure of self-assembled organic/inorganic semiconductor interfaces: lead phthalocyanine on InSb and InAs(100)-4X2/c(8 X2)
Authors: Giovanelli, L Papageorgiou, N Terzian, G Layet, JM Mossoyan, JC Mossoyan-Deneux, M Gothelid, M Le Lay, G
Citation: L. Giovanelli et al., Electronic structure of self-assembled organic/inorganic semiconductor interfaces: lead phthalocyanine on InSb and InAs(100)-4X2/c(8 X2), J ELEC SPEC, 114, 2001, pp. 375-381
Computerized map of risk to manage wildlife species in urban areas
Authors: Le Lay, G Clergeau, P Hubert-Moy, L
Citation: G. Le Lay et al., Computerized map of risk to manage wildlife species in urban areas, ENVIR MANAG, 27(3), 2001, pp. 451-461
Nature of the root 3 alpha to 3 x 3 reversible phase transition at low temperature in Sn/Ge (111)
Authors: Le Lay, G Rad, MG Gothelid, M Karlsson, UO Avila, J Asensio, MC
Citation: G. Le Lay et al., Nature of the root 3 alpha to 3 x 3 reversible phase transition at low temperature in Sn/Ge (111), APPL SURF S, 175, 2001, pp. 201-206
High resolution photoemission study on SnO2 gas sensors
Authors: Sinner-Hettenbach, M Barsan, N Weimar, U Weiss, T von Schenck, H Gothelid, M Giovanelli, L Le Lay, G
Citation: M. Sinner-hettenbach et al., High resolution photoemission study on SnO2 gas sensors, THIN SOL FI, 391(2), 2001, pp. 192-197
Synchrotron radiation photoelectron spectroscopy study of Pb-Pc thin filmson InSb(100)-(4x2)/c(8x2)
Authors: Giovanelli, L Von Schenck, H Sinner-Hettenbach, M Papageorgiou, N Gothelid, M Le Lay, G
Citation: L. Giovanelli et al., Synchrotron radiation photoelectron spectroscopy study of Pb-Pc thin filmson InSb(100)-(4x2)/c(8x2), SURF SCI, 486(1-2), 2001, pp. 55-64
Lead phthalocyanine thin films on InAs(100)-(4 x 2)/c(8 x 2) studied by synchrotron radiation photoelectron spectroscopy
Authors: Papageorgiou, N Giovanelli, L Faure, JB Layet, JM Gothelid, M Le Lay, G
Citation: N. Papageorgiou et al., Lead phthalocyanine thin films on InAs(100)-(4 x 2)/c(8 x 2) studied by synchrotron radiation photoelectron spectroscopy, SURF SCI, 482, 2001, pp. 1199-1204
Photoemission studies of alpha-Sn(100)2 x 1 surface
Authors: Le Lay, G Aristov, VY Cricenti, A Perfetti, P Barret, N Guillot, C
Citation: G. Le Lay et al., Photoemission studies of alpha-Sn(100)2 x 1 surface, SURF SCI, 482, 2001, pp. 552-555
Influence of charged impurities on the surface phases of Sn/Ge(111)
Authors: Rad, MG Gothelid, M Le Lay, G Karlsson, UO Grehk, TM Sandell, A
Citation: Mg. Rad et al., Influence of charged impurities on the surface phases of Sn/Ge(111), SURF SCI, 477(2-3), 2001, pp. 227-234
Electronic properties of alpha-Sn(100)2x1: Evidence for asymmetric dimer reconstruction
Authors: Cricenti, A Perfetti, P Barret, N Guillot, C Aristov, VY Le Lay, G
Citation: A. Cricenti et al., Electronic properties of alpha-Sn(100)2x1: Evidence for asymmetric dimer reconstruction, APPL PHYS L, 78(20), 2001, pp. 3032-3034
Ge tetramer structure of the p(2 root 2x4 root 2)R45 degrees surface reconstruction of Ge/Ag(001): A surface x-ray diffraction and STM study
Authors: Oughaddou, H Gay, JM Aufray, B Lapena, L Le Lay, G Bunk, O Falkenberg, G Zeysing, JH Johnson, RL
Citation: H. Oughaddou et al., Ge tetramer structure of the p(2 root 2x4 root 2)R45 degrees surface reconstruction of Ge/Ag(001): A surface x-ray diffraction and STM study, PHYS REV B, 61(8), 2000, pp. 5692-5697
Li-induced phase transition from the Ge(111)3X1 : Li surface reconstruction to the Ge(111)root 3X root 3 : Li lithium germanide
Authors: Grehk, TM Gothelid, M Bjorkqvist, M Le Lay, G Karlsson, UO
Citation: Tm. Grehk et al., Li-induced phase transition from the Ge(111)3X1 : Li surface reconstruction to the Ge(111)root 3X root 3 : Li lithium germanide, PHYS REV B, 61(7), 2000, pp. 4963-4967
Photoemission measurements of quantum states in accumulation layers at narrow band gap III-V semiconductor surfaces
Authors: Aristov, VY Zhilin, VM Grupp, C Taleb-Ibrahimi, A Kim, HJ Mangat, PS Soukiassian, P Le Lay, G
Citation: Vy. Aristov et al., Photoemission measurements of quantum states in accumulation layers at narrow band gap III-V semiconductor surfaces, APPL SURF S, 166(1-4), 2000, pp. 263-267
Dynamical fluctuation and surface phase transition at the Sn/Ge(111) root 3 x root 3R30 degrees-alpha interface
Authors: Avila, J Huttel, Y Le Lay, G Asensio, MC
Citation: J. Avila et al., Dynamical fluctuation and surface phase transition at the Sn/Ge(111) root 3 x root 3R30 degrees-alpha interface, APPL SURF S, 162, 2000, pp. 48-55
Semiconductor on metal adsorption: Ge tetramers on the Ag(001) surface
Authors: Oughaddou, H Aufray, B Le Lay, G Gay, JM Zeysing, JH Johnson, RL Barrett, N Guillot, C
Citation: H. Oughaddou et al., Semiconductor on metal adsorption: Ge tetramers on the Ag(001) surface, APPL SURF S, 162, 2000, pp. 74-77
High resolution synchrotron radiation PES study of PbPc deposited on Pt(111)
Authors: Papageorgiou, N Mossoyan, JC Mossoyan-Deneux, M Terzian, G Janin, E Gothelid, M Giovanelli, L Layet, JM Le Lay, G
Citation: N. Papageorgiou et al., High resolution synchrotron radiation PES study of PbPc deposited on Pt(111), APPL SURF S, 162, 2000, pp. 178-183
Sb-terminated Si(110), Si(100) and Si(111) surfaces studied with high resolution core-level spectroscopy
Authors: Cricenti, A Ottaviani, C Comicioli, C Crotti, C Ferrari, L Quaresima, C Perfetti, P Le Lay, G
Citation: A. Cricenti et al., Sb-terminated Si(110), Si(100) and Si(111) surfaces studied with high resolution core-level spectroscopy, APPL SURF S, 162, 2000, pp. 380-383
A chemical and morphological study of fullerene derivatives Langmuir-Blodgett films
Authors: Giovanelli, L Le Lay, G
Citation: L. Giovanelli et G. Le Lay, A chemical and morphological study of fullerene derivatives Langmuir-Blodgett films, APPL SURF S, 162, 2000, pp. 513-518
1D electronic properties in temperature-induced c(4x2) to 2x1 transition on the beta-SiC(100) surface
Authors: Enriquez, H Derycke, V Aristov, VY Soukiassian, P Le Lay, G di Cioccio, L Cricenti, A Croti, C Ferrari, L Perfetti, P
Citation: H. Enriquez et al., 1D electronic properties in temperature-induced c(4x2) to 2x1 transition on the beta-SiC(100) surface, APPL SURF S, 162, 2000, pp. 559-564
ACSIN-5 - Proceedings of the Fifth International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures - Aix en Provence, France, July 6-9, 1999 - Preface
Authors: Bernardini, J Dallaporta, H Le Lay, G Soukiassian, P
Citation: J. Bernardini et al., ACSIN-5 - Proceedings of the Fifth International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures - Aix en Provence, France, July 6-9, 1999 - Preface, APPL SURF S, 162, 2000, pp. XIII-XIII
Ge/Ag(111) semiconductor-on-metal growth: Formation of an Ag2Ge surface alloy
Authors: Oughaddou, H Sawaya, S Goniakowski, J Aufray, B Le Lay, G Gay, JM Treglia, G Biberian, JP Barrett, N Guillot, C Mayne, A Dujardin, G
Citation: H. Oughaddou et al., Ge/Ag(111) semiconductor-on-metal growth: Formation of an Ag2Ge surface alloy, PHYS REV B, 62(24), 2000, pp. 16653-16656
Sharp high-resolution Si 2p core level on the Sb-terminated Si(111) surface: Evidence for charge transfer
Authors: Cricenti, A Quaresima, C Ottaviani, C Ferrari, L Perfetti, P Crotti, C Le Lay, G Margaritondo, G
Citation: A. Cricenti et al., Sharp high-resolution Si 2p core level on the Sb-terminated Si(111) surface: Evidence for charge transfer, PHYS REV B, 62(15), 2000, pp. 9931-9934
Atomic origins of the Si 2p surface core-level shifts of the "prototypical" Si(111)root 3x root 3R(30 degrees)-Ag structure
Authors: Le Lay, G Gothelid, M Cricenti, A Hakansson, C Perfetti, P
Citation: G. Le Lay et al., Atomic origins of the Si 2p surface core-level shifts of the "prototypical" Si(111)root 3x root 3R(30 degrees)-Ag structure, EUROPH LETT, 45(1), 1999, pp. 65-70
Core-level photoemission spectroscopy of the beta-SiC(100) c(4 x 2) surface
Authors: Aristov, VY Enriquez, H Derycke, V Soukiassian, P Le Lay, G Grupp, C Taleb-Ibrahimi, A
Citation: Vy. Aristov et al., Core-level photoemission spectroscopy of the beta-SiC(100) c(4 x 2) surface, PHYS REV B, 60(24), 1999, pp. 16553-16557
Sb/Si(110) 2x3 surface studied with scanning tunneling microscopy: Evidence for adatom reconstruction
Authors: Cricenti, A Perfetti, P Le Lay, G Zeysing, J Falkenberg, G Seehofer, L Johnson, RL
Citation: A. Cricenti et al., Sb/Si(110) 2x3 surface studied with scanning tunneling microscopy: Evidence for adatom reconstruction, PHYS REV B, 60(19), 1999, pp. 13280-13282
Risultati: 1-25 | 26-29