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Results: 1-25 | 26-30
Results: 1-25/30
Electrical characteristics of thin cerium oxide film on silicon substrate by reactive DC sputtering
Authors: Pan, TM Chien, CH Lei, TF Chao, TS Huang, TY
Citation: Tm. Pan et al., Electrical characteristics of thin cerium oxide film on silicon substrate by reactive DC sputtering, EL SOLID ST, 4(9), 2001, pp. F15-F17
An investigation of scanning capacitance microscopy on iron-contaminated p-type silicon
Authors: Chang, MN Chang, TY Pan, FM Wu, BW Lei, TF
Citation: Mn. Chang et al., An investigation of scanning capacitance microscopy on iron-contaminated p-type silicon, EL SOLID ST, 4(9), 2001, pp. G69-G71
Monitoring lithographic focus and tilting performance by off-line overlay measurement tools
Authors: Ku, CY Lei, TF Cheng, DS
Citation: Cy. Ku et al., Monitoring lithographic focus and tilting performance by off-line overlay measurement tools, J VAC SCI B, 19(5), 2001, pp. 1915-1924
Comparison of novel cleaning solutions, with various chelating agents for post-CMP cleaning on poly-Si film
Authors: Pan, TM Lei, TF Ko, FH Chao, TS Chiu, TH Lee, YH Lu, CP
Citation: Tm. Pan et al., Comparison of novel cleaning solutions, with various chelating agents for post-CMP cleaning on poly-Si film, IEEE SEMIC, 14(4), 2001, pp. 365-371
High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment
Authors: Pan, TM Lei, TF Yang, WL Cheng, CM Chao, TS
Citation: Tm. Pan et al., High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment, IEEE ELEC D, 22(2), 2001, pp. 68-70
Thin tunnel oxide grown on silicon substrate pretreated by CF4 plasma
Authors: Lee, JW Lei, TF Lee, CL
Citation: Jw. Lee et al., Thin tunnel oxide grown on silicon substrate pretreated by CF4 plasma, IEEE ELEC D, 22(11), 2001, pp. 513-515
A novel thin-film transistor with self-aligned field induced drain
Authors: Lin, HC Yu, CM Lin, CY Yeh, KL Huang, TY Lei, TF
Citation: Hc. Lin et al., A novel thin-film transistor with self-aligned field induced drain, IEEE ELEC D, 22(1), 2001, pp. 26-28
Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate dielectrics
Authors: Pan, TM Lei, TF Chao, TS
Citation: Tm. Pan et al., Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate dielectrics, J APPL PHYS, 89(6), 2001, pp. 3447-3452
High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices
Authors: Yang, WL Chao, TS Cheng, CM Pan, TM Lei, TF
Citation: Wl. Yang et al., High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices, IEEE DEVICE, 48(7), 2001, pp. 1304-1309
Characterization of ultrathin oxynitride (18-21 angstrom) gate dielectricsby NH3 nitridation and N2O RTA treatment
Authors: Pan, TM Lei, TF Wen, HC Chao, TS
Citation: Tm. Pan et al., Characterization of ultrathin oxynitride (18-21 angstrom) gate dielectricsby NH3 nitridation and N2O RTA treatment, IEEE DEVICE, 48(5), 2001, pp. 907-912
High reliability polyoxide fabricated by using TEOS oxide deposited on disilane polysilicon film
Authors: Lee, JW Lee, CL Lei, TF Lai, CS
Citation: Jw. Lee et al., High reliability polyoxide fabricated by using TEOS oxide deposited on disilane polysilicon film, IEEE DEVICE, 48(4), 2001, pp. 743-749
Improvements in both thermal stability of Ni-silicide and electrical reliability of gate oxides using a stacked polysilicon gate structure
Authors: Lee, JW Lin, SX Lei, TF Lee, CL
Citation: Jw. Lee et al., Improvements in both thermal stability of Ni-silicide and electrical reliability of gate oxides using a stacked polysilicon gate structure, J ELCHEM SO, 148(9), 2001, pp. G530-G533
The enhancement of nitrogen incorporation in RTN2O annealed TEOS oxide fabricated on disilane-based polysilicon films
Authors: Lee, JW Chen, WD Lei, TF Lee, CL
Citation: Jw. Lee et al., The enhancement of nitrogen incorporation in RTN2O annealed TEOS oxide fabricated on disilane-based polysilicon films, J ELCHEM SO, 148(8), 2001, pp. F164-F169
Expanding the process window and reducing the optical proximity effect by post-exposure delay
Authors: Ku, CY Shieh, JM Chiou, TB Lin, HK Lei, TF
Citation: Cy. Ku et al., Expanding the process window and reducing the optical proximity effect by post-exposure delay, J ELCHEM SO, 148(8), 2001, pp. G434-G438
One-step cleaning solution to replace the conventional RCA two-step cleaning recipe for pregate oxide cleaning
Authors: Pan, TM Lei, TF Chao, TS Liaw, MC Ko, FH Lu, CP
Citation: Tm. Pan et al., One-step cleaning solution to replace the conventional RCA two-step cleaning recipe for pregate oxide cleaning, J ELCHEM SO, 148(6), 2001, pp. G315-G320
High-k cobalt-titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films
Authors: Pan, TM Lei, TF Chao, TS
Citation: Tm. Pan et al., High-k cobalt-titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films, APPL PHYS L, 78(10), 2001, pp. 1439-1441
Focus measurement with a simple pattern design
Authors: Ku, CY Lei, TF Lin, HK
Citation: Cy. Ku et al., Focus measurement with a simple pattern design, APPL OPTICS, 40(16), 2001, pp. 2662-2669
Optimum conditions for novel one-step cleaning method for pre-gate oxide cleaning using robust design methodology
Authors: Pan, TM Lei, TF Chao, TS Liaw, MC Lu, CP
Citation: Tm. Pan et al., Optimum conditions for novel one-step cleaning method for pre-gate oxide cleaning using robust design methodology, JPN J A P 1, 39(10), 2000, pp. 5805-5808
Improvement of polysilicon oxide integrity using NF3-annealing
Authors: Yang, WL Shieh, MS Chen, YM Chao, TS Liu, DG Lei, TF
Citation: Wl. Yang et al., Improvement of polysilicon oxide integrity using NF3-annealing, JPN J A P 2, 39(6B), 2000, pp. L562-L563
High quality ultrathin CoTiO3 high-k gate dielectrics
Authors: Pan, TM Lei, TF Chao, TS Chang, KL Hsieh, KC
Citation: Tm. Pan et al., High quality ultrathin CoTiO3 high-k gate dielectrics, EL SOLID ST, 3(9), 2000, pp. 433-434
Robust ultrathin oxynitride dielectrics by NH3 nitridation and N2O RTA treatment
Authors: Pan, TM Lei, TF Chao, TS
Citation: Tm. Pan et al., Robust ultrathin oxynitride dielectrics by NH3 nitridation and N2O RTA treatment, IEEE ELEC D, 21(8), 2000, pp. 378-380
Novel cleaning solutions for polysilicon film post chemical mechanical polishing
Authors: Pan, TM Lei, TF Chen, CC Chao, TS Liaw, MC Yang, WL Tsai, MS Lu, CP Chang, WH
Citation: Tm. Pan et al., Novel cleaning solutions for polysilicon film post chemical mechanical polishing, IEEE ELEC D, 21(7), 2000, pp. 338-340
Characteristics of polysilicon oxides combining N2O nitridation and CMP processes
Authors: Lei, TF Chen, JH Wang, MF Chao, TS
Citation: Tf. Lei et al., Characteristics of polysilicon oxides combining N2O nitridation and CMP processes, IEEE DEVICE, 47(8), 2000, pp. 1545-1552
Low contact resistance of poly-plug structure by in-situ HF-vapour cleaning
Authors: Chen, JH Lei, TF Chao, TS Su, TP Huang, SJ Tuan, A Chen, SK
Citation: Jh. Chen et al., Low contact resistance of poly-plug structure by in-situ HF-vapour cleaning, ELECTR LETT, 36(8), 2000, pp. 756-757
Characteristics of TEOS polysilicon oxides: Improvement by CMP and high temperature RTA N-2/N2O annealing
Authors: Chen, JH Lei, TF Chen, JH Chao, TS
Citation: Jh. Chen et al., Characteristics of TEOS polysilicon oxides: Improvement by CMP and high temperature RTA N-2/N2O annealing, J ELCHEM SO, 147(11), 2000, pp. 4282-4288
Risultati: 1-25 | 26-30