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Results:
1-21
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Results: 21
Authors:
Grivickas, P
Galeckas, A
Linnros, J
Syvajarvi, M
Yakimova, R
Grivickas, V
Tellefsen, JA
Citation: P. Grivickas et al., Carrier lifetime investigation in 4H-SiC grown by CVD and sublimation epitaxy, MAT SC S PR, 4(1-3), 2001, pp. 191-194
Authors:
Valenta, J
Lalic, N
Linnros, J
Citation: J. Valenta et al., Electroluminescence microscopy and spectroscopy of silicon nanocrystals inthin SiO2 layers, OPT MATER, 17(1-2), 2001, pp. 45-50
Authors:
Grivickas, P
Linnros, J
Grivickas, V
Citation: P. Grivickas et al., Carrier diffusion characterization in epitaxial 4H-SiC, J MATER RES, 16(2), 2001, pp. 524-528
Authors:
Kleimann, P
Linnros, J
Frojdh, C
Petersson, CS
Citation: P. Kleimann et al., An X-ray imaging pixel detector based on scintillator filled pores in a silicon matrix, NUCL INST A, 460(1), 2001, pp. 15-19
Authors:
Galeckas, A
Linnros, J
Breitholtz, B
Bleichner, H
Citation: A. Galeckas et al., Application of optical emission microscopy for reliability studies in 4H-SiC p(+)/n(-)/n(+) diodes, J APPL PHYS, 90(2), 2001, pp. 980-984
Authors:
Galeckas, A
Linnros, J
Frischholz, M
Grivickas, V
Citation: A. Galeckas et al., Optical characterization of excess carrier lifetime and surface recombination in 4H/6H-SiC, APPL PHYS L, 79(3), 2001, pp. 365-367
Authors:
Kleimann, P
Linnros, J
Juhasz, R
Citation: P. Kleimann et al., Formation of three-dimensional microstructures by electrochemical etching of silicon, APPL PHYS L, 79(11), 2001, pp. 1727-1729
Three-dimensionally controlled size-reduction of silicon nanopillars by photoelectrochemical etching
Authors:
Juhasz, R
Linnros, J
Citation: R. Juhasz et J. Linnros, Three-dimensionally controlled size-reduction of silicon nanopillars by photoelectrochemical etching, APPL PHYS L, 78(20), 2001, pp. 3118-3120
Authors:
Kleimann, P
Linnros, J
Petersson, S
Citation: P. Kleimann et al., Formation of wide and deep pores in silicon by electrochemical etching, MAT SCI E B, 69, 2000, pp. 29-33
Authors:
Grivickas, V
Galeckas, A
Bikbajevas, V
Linnros, J
Tellefsen, JA
Citation: V. Grivickas et al., Spatially and time-resolved infrared absorption for optical and electricalcharacterization of indirect band gap semiconductors, THIN SOL FI, 364(1-2), 2000, pp. 181-185
Authors:
Kleimann, P
Linnros, J
Frojdh, C
Petersson, CS
Citation: P. Kleimann et al., An x-ray imaging pixel detector based on a scintillating guides screen, IEEE NUCL S, 47(4), 2000, pp. 1483-1486
Authors:
Grivickas, V
Linnros, J
Grivickas, P
Galeckas, A
Citation: V. Grivickas et al., Band edge absorption, carrier recombination and transport measurements in 4H-SiC epilayers, MAT SCI E B, 61-2, 1999, pp. 197-201
Authors:
Galeckas, A
Linnros, J
Frischholz, M
Rottner, K
Nordell, N
Karlsson, S
Grivickas, V
Citation: A. Galeckas et al., Investigation of surface recombination and carrier lifetime in 4H/6H-SiC, MAT SCI E B, 61-2, 1999, pp. 239-243
Authors:
Galeckas, A
Tornblad, O
Linnros, J
Breitholtz, B
Citation: A. Galeckas et al., Direct observation of excess carrier distribution in 4H-SiC power diodes, IEEE ELEC D, 20(6), 1999, pp. 295-297
Authors:
Bikbajevas, V
Grivickas, V
Linnros, J
Tellefsen, JA
Citation: V. Bikbajevas et al., Injection-level dependent surface recombination velocities at the Si-SiO2 interface, PHYS SCR, T79, 1999, pp. 322-326
Authors:
Linnros, J
Lalic, N
Galeckas, A
Grivickas, V
Citation: J. Linnros et al., Analysis of the stretched exponential photoluminescence decay from nanometer-sized silicon crystals in SiO2, J APPL PHYS, 86(11), 1999, pp. 6128-6134
Authors:
Domeij, M
Breitholtz, B
Hillkirk, LM
Linnros, J
Ostling, M
Citation: M. Domeij et al., Dynamic avalanche in 3.3-kV Si power diodes, IEEE DEVICE, 46(4), 1999, pp. 781-786
Authors:
Galeckas, A
Linnros, J
Breitholtz, B
Citation: A. Galeckas et al., Time-resolved imaging of radiative recombination in 4H-SiC p-i-n diode, APPL PHYS L, 74(22), 1999, pp. 3398-3400
Authors:
Mou, D
Linnros, J
Petersson, CS
Rao, KV
Citation: D. Mou et al., Electrical properties of epitaxial PbTiO3/YBa2Cu3O7-x heterostructures, PHYSICA C, 308(3-4), 1998, pp. 221-225
Authors:
Lalic, N
Linnros, J
Citation: N. Lalic et J. Linnros, Light emitting diode structure based on Si nanocrystals formed by implantation into thermal oxide, J LUMINESC, 80(1-4), 1998, pp. 263-267
Authors:
Linnros, J
Priolo, F
Canham, L
Citation: J. Linnros et al., Proceedings of symposium B on light emission from silicon: Progress towards Si-based optoelectronics of the 1998 E-MRS Spring Conference Strasbourg, France, 16-19 June 1998 - Preface, J LUMINESC, 80(1-4), 1998, pp. VII-VII
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