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Results: 1-14 |
Results: 14
Electroluminescence of beta-FeSi2 light emitting devices
Authors: Lourenco, MA Butler, TM Kewell, AK Gwilliam, RM Kirkby, KJ Homewood, KP
Citation: Ma. Lourenco et al., Electroluminescence of beta-FeSi2 light emitting devices, JPN J A P 1, 40(6A), 2001, pp. 4041-4044
Electrical, electronic and optical characterisation of ion beam synthesised beta-FeSi2 light emitting devices
Authors: Lourenco, MA Butler, TM Kewell, AK Gwilliam, RM Kirkby, KJ Homewood, KP
Citation: Ma. Lourenco et al., Electrical, electronic and optical characterisation of ion beam synthesised beta-FeSi2 light emitting devices, NUCL INST B, 175, 2001, pp. 159-163
A comparative study of vacancies produced by proton implantation of silicon using positron annihilation and deep level transient spectroscopy
Authors: Lourenco, MA Knights, AP Homewood, KP Gwilliam, RM Simpson, PJ Mascher, P
Citation: Ma. Lourenco et al., A comparative study of vacancies produced by proton implantation of silicon using positron annihilation and deep level transient spectroscopy, NUCL INST B, 175, 2001, pp. 300-304
Ion beam synthesized silicides: growth, characterization and devices
Authors: Homewood, KP Reeson, KJ Gwilliam, RM Kewell, AK Lourenco, MA Shao, G Chen, YL Sharpe, JS McKinty, CN Butler, T
Citation: Kp. Homewood et al., Ion beam synthesized silicides: growth, characterization and devices, THIN SOL FI, 381(2), 2001, pp. 188-193
An efficient room-temperature silicon-based light-emitting diode (vol 410,pg 192, 2001)
Authors: Ng, WL Lourenco, MA Gwilliam, RM Ledain, S Shao, G Homewood, KP
Citation: Wl. Ng et al., An efficient room-temperature silicon-based light-emitting diode (vol 410,pg 192, 2001), NATURE, 414(6862), 2001, pp. 470-470
An efficient room-temperature silicon-based light-emitting diode
Authors: Ng, WL Lourenco, MA Gwilliam, RM Ledain, S Shao, G Homewood, KP
Citation: Wl. Ng et al., An efficient room-temperature silicon-based light-emitting diode, NATURE, 410(6825), 2001, pp. 192-194
Stress analysis of B doped silicon bridges and cantilever structures by Raman spectroscopy
Authors: Lourenco, MA Gardiner, DJ Bowden, M Hedley, J Wood, D
Citation: Ma. Lourenco et al., Stress analysis of B doped silicon bridges and cantilever structures by Raman spectroscopy, J MAT SCI L, 19(9), 2000, pp. 767-769
Alleviation of temperature effects in the Raman micro-spectroscopy of boron doped silicon microstructures
Authors: Lourenco, MA Gardiner, DJ Gouvernayre, V Bowden, M Hedley, J Wood, D
Citation: Ma. Lourenco et al., Alleviation of temperature effects in the Raman micro-spectroscopy of boron doped silicon microstructures, J MAT SCI L, 19(9), 2000, pp. 771-773
The optical properties of beta-FeSi2 fabricated by ion beam assisted sputtering
Authors: McKinty, CN Kewell, AK Sharpe, JS Lourenco, MA Butler, TM Valizadeh, R Colligon, JS Kirkby, KJR Homewood, KP
Citation: Cn. Mckinty et al., The optical properties of beta-FeSi2 fabricated by ion beam assisted sputtering, NUCL INST B, 161, 2000, pp. 922-925
Structural characterisation of ion beam synthesised Ru2Si3
Authors: Sharpe, JS Chen, YL Gwilliam, RM Kewell, AK Ledain, S McKinty, CN Lourenco, MA Butler, T Homewood, KP Kirkby, KJR Shao, G
Citation: Js. Sharpe et al., Structural characterisation of ion beam synthesised Ru2Si3, NUCL INST B, 161, 2000, pp. 937-940
Low temperature annealing of 4H-SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation
Authors: Knights, AP Lourenco, MA Homewood, KP Morrison, DJ Wright, NG Ortolland, S Johnson, CM O'Neill, AG Coleman, PG Hilton, KP Uren, MJ
Citation: Ap. Knights et al., Low temperature annealing of 4H-SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation, J APPL PHYS, 87(8), 2000, pp. 3973-3977
Ion beam synthesized Ru2Si3
Authors: Sharpe, JS Chen, YL Gwilliam, RM Kewell, AK McKinty, CN Lourenco, MA Shao, G Homewood, KP Kirkby, KR
Citation: Js. Sharpe et al., Ion beam synthesized Ru2Si3, APPL PHYS L, 75(9), 1999, pp. 1282-1283
A deep semiconductor defect with continuously variable activation energy and capture cross section
Authors: Lourenco, MA Ng, WL Homewood, KP Durose, K
Citation: Ma. Lourenco et al., A deep semiconductor defect with continuously variable activation energy and capture cross section, APPL PHYS L, 75(2), 1999, pp. 277-279
Characterisation by TEM and X-ray diffraction of linearly graded composition InGaAs buffer layers on (001) GaAs
Authors: Pacheco, FJ Araujo, D Molina, SI Garcia, R Sacedon, A Gonzalez-Sanz, F Calleja, E Kidd, P Lourenco, MA
Citation: Fj. Pacheco et al., Characterisation by TEM and X-ray diffraction of linearly graded composition InGaAs buffer layers on (001) GaAs, MATER SCI T, 14(12), 1998, pp. 1273-1278
Risultati: 1-14 |