AAAAAA

   
Results: 1-11 |
Results: 11
Electronic properties of nanostructures defined in Ga[Al]As heterostructures by local oxidation
Authors: Heinzel, T Held, R Luscher, S Ensslin, K Wegscheider, W Bichler, M
Citation: T. Heinzel et al., Electronic properties of nanostructures defined in Ga[Al]As heterostructures by local oxidation, PHYSICA E, 9(1), 2001, pp. 84-93
Electronic properties of AFM-defined semiconductor nanostructures
Authors: Luscher, S Held, R Fuhrer, A Heinzel, T Ensslin, K Bichler, M Wegscheider, W
Citation: S. Luscher et al., Electronic properties of AFM-defined semiconductor nanostructures, MAT SCI E C, 15(1-2), 2001, pp. 153-157
Phase diagram of a quantum dot with steep walls in strong magnetic fields
Authors: Fuhrer, A Luscher, S Heinzel, T Ensslin, K Wegscheider, W Bichler, M
Citation: A. Fuhrer et al., Phase diagram of a quantum dot with steep walls in strong magnetic fields, PHYS ST S-B, 224(2), 2001, pp. 555-560
Investigation of spin pairing in a semiconductor quantum dot
Authors: Luscher, S Heinzel, T Ensslin, K Wegscheider, W Bichler, M
Citation: S. Luscher et al., Investigation of spin pairing in a semiconductor quantum dot, PHYS ST S-B, 224(2), 2001, pp. 561-565
Transport properties of quantum dots with steep walls - art. no. 125309
Authors: Fuhrer, A Luscher, S Heinzel, T Ensslin, K Wegscheider, W Bichler, M
Citation: A. Fuhrer et al., Transport properties of quantum dots with steep walls - art. no. 125309, PHYS REV B, 6312(12), 2001, pp. 5309
Signatures of spin pairing in chaotic quantum dots
Authors: Luscher, S Heinzel, T Ensslin, K Wegscheider, W Bichler, M
Citation: S. Luscher et al., Signatures of spin pairing in chaotic quantum dots, PHYS REV L, 86(10), 2001, pp. 2118-2121
Single-hole transistor in a p-Si/SiGe quantum well
Authors: Dotsch, U Gennser, U David, C Dehlinger, G Grutzmacher, D Heinzel, T Luscher, S Ensslin, K
Citation: U. Dotsch et al., Single-hole transistor in a p-Si/SiGe quantum well, APPL PHYS L, 78(3), 2001, pp. 341-343
Shifting a quantum wire through a disordered crystal: Observation of conductance fluctuations in real space
Authors: Heinzel, T Salis, G Held, R Luscher, S Ensslin, K Wegscheider, W Bichler, M
Citation: T. Heinzel et al., Shifting a quantum wire through a disordered crystal: Observation of conductance fluctuations in real space, PHYS REV B, 61(20), 2000, pp. R13353-R13356
In-plane gate single electron transistor fabricated by AFM lithography
Authors: Luscher, S Fuhrer, A Held, R Heinzel, T Ensslin, K Wegscheider, W Bichler, M
Citation: S. Luscher et al., In-plane gate single electron transistor fabricated by AFM lithography, J L TEMP PH, 118(5-6), 2000, pp. 333-342
Fabricating tunable semiconductor devices with an atomic force microscope
Authors: Held, R Luscher, S Heinzel, T Ensslin, K Wegscheider, W
Citation: R. Held et al., Fabricating tunable semiconductor devices with an atomic force microscope, APPL PHYS L, 75(8), 1999, pp. 1134-1136
In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography
Authors: Luscher, S Fuhrer, A Held, R Heinzel, T Ensslin, K Wegscheider, W
Citation: S. Luscher et al., In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography, APPL PHYS L, 75(16), 1999, pp. 2452-2454
Risultati: 1-11 |