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Results: 1-10 |
Results: 10
CLEAVED AND ETCHED FACET NITRIDE LASER-DIODES
Authors: ABARE AC MACK MP HANSEN M SINK RK KOZODOY P KELLER S SPECK JS BOWERS JE MISHRA UK COLDREN LA DENBAARS SP
Citation: Ac. Abare et al., CLEAVED AND ETCHED FACET NITRIDE LASER-DIODES, IEEE journal of selected topics in quantum electronics, 4(3), 1998, pp. 505-509
CHARACTERISTICS OF INDIUM-GALLIUM-NITRIDE MULTIPLE-QUANTUM-WELL BLUE LASER-DIODES GROWN BY MOCVD
Authors: MACK MP ABARE AC HANSEN M KOZODOY P KELLER S MISHRA U COLDREN LA DENBAARS SP
Citation: Mp. Mack et al., CHARACTERISTICS OF INDIUM-GALLIUM-NITRIDE MULTIPLE-QUANTUM-WELL BLUE LASER-DIODES GROWN BY MOCVD, Journal of crystal growth, 190, 1998, pp. 837-840
IMPROVEMENT OF GAN-BASED LASER-DIODE FACETS BY FIB POLISHING
Authors: MACK MP VIA GD ABARE AC HANSEN M KOZODOY P KELLER S SPECK JS MISHRA UK COLDREN LA DENBAARS SP
Citation: Mp. Mack et al., IMPROVEMENT OF GAN-BASED LASER-DIODE FACETS BY FIB POLISHING, Electronics Letters, 34(13), 1998, pp. 1315-1316
EFFECTS OF SI-DOPING IN THE BARRIERS OF INGAN MULTIQUANTUM-WELL PURPLISH-BLUE LASER-DIODES
Authors: CHICHIBU S COHEN DA MACK MP ABARE AC KOZODOY P MINSKY M FLEISCHER S KELLER S BOWERS JE MISHRA UK COLDREN LA CLARKE DR DENBAARS SP
Citation: S. Chichibu et al., EFFECTS OF SI-DOPING IN THE BARRIERS OF INGAN MULTIQUANTUM-WELL PURPLISH-BLUE LASER-DIODES, Applied physics letters, 73(4), 1998, pp. 496-498
ELECTRON-IRRADIATION-INDUCED DEEP-LEVEL IN N-TYPE GAN
Authors: FANG ZQ HEMSKY JW LOOK DC MACK MP
Citation: Zq. Fang et al., ELECTRON-IRRADIATION-INDUCED DEEP-LEVEL IN N-TYPE GAN, Applied physics letters, 72(4), 1998, pp. 448-449
CATASTROPHIC OPTICAL-DAMAGE IN GAINN MULTIPLE-QUANTUM WELLS
Authors: COHEN DA MARGALITH T ABARE AC MACK MP COLDREN LA DENBAARS SP CLARKE DR
Citation: Da. Cohen et al., CATASTROPHIC OPTICAL-DAMAGE IN GAINN MULTIPLE-QUANTUM WELLS, Applied physics letters, 72(25), 1998, pp. 3267-3269
RECONFIGURABLE OPTICAL-PROPERTIES IN INGAN GAN QUANTUM-WELLS/
Authors: SHMAGIN IK MUTH JF KOLBAS RM MACK MP ABARE AC KELLER S COLDREN LA MISHRA UK DENBAARS SP
Citation: Ik. Shmagin et al., RECONFIGURABLE OPTICAL-PROPERTIES IN INGAN GAN QUANTUM-WELLS/, Applied physics letters, 71(11), 1997, pp. 1455-1457
TERTIARYBUTYLARSINE AND TERTIARYBUTYLPHOSPHINE FOR THE MOCVD GROWTH OF LOW-THRESHOLD 1.55-MU-M INXGA1-XAS INP QUANTUM-WELL LASERS/
Authors: HEIMBUCH ME HOLMES AL REAVES CM MACK MP DENBAARS SP COLDREN LA
Citation: Me. Heimbuch et al., TERTIARYBUTYLARSINE AND TERTIARYBUTYLPHOSPHINE FOR THE MOCVD GROWTH OF LOW-THRESHOLD 1.55-MU-M INXGA1-XAS INP QUANTUM-WELL LASERS/, Journal of electronic materials, 23(2), 1994, pp. 87-91
LOW-THRESHOLD 1.5 MU-M QUANTUM-WELL LASERS GROWN BY ATMOSPHERIC-PRESSURE MOCVD WITH TERTIARYBUTYLARSINE (TBA) AND TERTIARYBUTYLPHOSPHINE (TBP)
Authors: HEIMBUCH ME HOLMES AL MACK MP DENBAARS SP COLDREN LA BOWERS JE
Citation: Me. Heimbuch et al., LOW-THRESHOLD 1.5 MU-M QUANTUM-WELL LASERS GROWN BY ATMOSPHERIC-PRESSURE MOCVD WITH TERTIARYBUTYLARSINE (TBA) AND TERTIARYBUTYLPHOSPHINE (TBP), Electronics Letters, 29(4), 1993, pp. 340-342
MICROWAVE OPERATION OF HIGH-POWER INGAP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: MACK MP BAYRAKTAROGLU B KEHIAS L BARRETTE J NEIDHARD R FITCH R SCHERER R DAVITO D WEST W
Citation: Mp. Mack et al., MICROWAVE OPERATION OF HIGH-POWER INGAP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Electronics Letters, 29(12), 1993, pp. 1068-1069
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