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Results: 1-8 |
Results: 8
NEW UNDERSTANDING OF LDD NMOS HOT-CARRIER DEGRADATION AND DEVICE LIFETIME AT CRYOGENIC TEMPERATURES
Authors: WANGRATKOVIC J LACOE RC MACWILLIAMS KP SONG MY BROWN S YABIKU G
Citation: J. Wangratkovic et al., NEW UNDERSTANDING OF LDD NMOS HOT-CARRIER DEGRADATION AND DEVICE LIFETIME AT CRYOGENIC TEMPERATURES, Microelectronics and reliability, 37(10-11), 1997, pp. 1747-1754
COMPARISON OF NMOS AND PMOS HOT-CARRIER EFFECTS FROM 300 TO 77 K
Authors: SONG M MACWILLIAMS KP WOO JCS
Citation: M. Song et al., COMPARISON OF NMOS AND PMOS HOT-CARRIER EFFECTS FROM 300 TO 77 K, I.E.E.E. transactions on electron devices, 44(2), 1997, pp. 268-276
RELIABILITY OF METAL INTERCONNECT AFTER A HIGH-CURRENT PULSE
Authors: SCARPULLA J ENG DC BROWN S MACWILLIAMS KP
Citation: J. Scarpulla et al., RELIABILITY OF METAL INTERCONNECT AFTER A HIGH-CURRENT PULSE, IEEE electron device letters, 17(7), 1996, pp. 322-324
HOLE CONFINEMENT IN A SI GESI/SI QUANTUM-WELL ON SIMOX/
Authors: NAYAK DK WOO JCS PARK JS WANG KL MACWILLIAMS KP
Citation: Dk. Nayak et al., HOLE CONFINEMENT IN A SI GESI/SI QUANTUM-WELL ON SIMOX/, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 180-182
CORRELATION OF PICOSECOND LASER-INDUCED LATCHUP AND ENERGETIC PARTICLE-INDUCED LATCHUP IN CMOS TEST STRUCTURES
Authors: MOSS SC LALUMONDIERE SD SCARPULLA JR MACWILLIAMS KP CRAIN WR KOGA R
Citation: Sc. Moss et al., CORRELATION OF PICOSECOND LASER-INDUCED LATCHUP AND ENERGETIC PARTICLE-INDUCED LATCHUP IN CMOS TEST STRUCTURES, IEEE transactions on nuclear science, 42(6), 1995, pp. 1948-1956
HIGH-MOBILITY P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR ON STRAINED SI
Authors: NAYAK DK WOO JCS PARK JS WANG KL MACWILLIAMS KP
Citation: Dk. Nayak et al., HIGH-MOBILITY P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR ON STRAINED SI, JPN J A P 1, 33(4B), 1994, pp. 2412-2414
HIGH-MOBILITY GESI PMOS ON SIMOX
Authors: NAYAK DK WOO JCS YABIKU GK MACWILLIAMS KP PARK JS WANG KL
Citation: Dk. Nayak et al., HIGH-MOBILITY GESI PMOS ON SIMOX, IEEE electron device letters, 14(11), 1993, pp. 520-522
HIGH-MOBILITY P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR ON STRAINED SI
Authors: NAYAK DK WOO JCS PARK JS WANG KL MACWILLIAMS KP
Citation: Dk. Nayak et al., HIGH-MOBILITY P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR ON STRAINED SI, Applied physics letters, 62(22), 1993, pp. 2853-2855
Risultati: 1-8 |