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Results: 1-11 |
Results: 11
A CRITICAL-ASSESSMENT OF DIFFERENT MODELS OF THE METASTABILITY IN A-SI-H
Authors: CHIERCHIA R LORETI S LORETO V MARIUCCI L MINARINI C MITTIGA A
Citation: R. Chierchia et al., A CRITICAL-ASSESSMENT OF DIFFERENT MODELS OF THE METASTABILITY IN A-SI-H, JPN J A P 1, 37(4A), 1998, pp. 1736-1746
DETERMINATION OF EXCESS CURRENT DUE TO IMPACT IONIZATION IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
Authors: POLICICCHIO I PECORA A CARLUCCIO R MARIUCCI L FORTUNATO G PLAIS F PRIBAT D
Citation: I. Policicchio et al., DETERMINATION OF EXCESS CURRENT DUE TO IMPACT IONIZATION IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, Solid-state electronics, 42(4), 1998, pp. 613-618
COMBINED SOLID-PHASE CRYSTALLIZATION AND EXCIMER-LASER ANNEALING PROCESS FOR POLYSILICON THIN-FILM TRANSISTORS
Authors: PECORA A MARIUCCI L CARLUCCIO R FORTUNATO G LEGAGNEUX P PLAIS F REITA C PRIBAT D STOEMENOS J
Citation: A. Pecora et al., COMBINED SOLID-PHASE CRYSTALLIZATION AND EXCIMER-LASER ANNEALING PROCESS FOR POLYSILICON THIN-FILM TRANSISTORS, Physica status solidi. a, Applied research, 166(2), 1998, pp. 707-714
DETERMINATION OF HOT-CARRIER-INDUCED INTERFACE STATE DENSITY IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
Authors: MARIUCCI L FORTUNATO G CARLUCCIO R PECORA A GIOVANNINI S MASSUSSI F COLALONGO L VALDINOCI M
Citation: L. Mariucci et al., DETERMINATION OF HOT-CARRIER-INDUCED INTERFACE STATE DENSITY IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, Journal of applied physics, 84(4), 1998, pp. 2341-2348
NUMERICAL-ANALYSIS OF ELECTRICAL CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS FABRICATED BY EXCIMER-LASER CRYSTALLIZATION
Authors: MARIUCCI L GIACOMETTI F PECORA A MASSUSSI F FORTUNATO G VALDINOCI M COLALONGO L
Citation: L. Mariucci et al., NUMERICAL-ANALYSIS OF ELECTRICAL CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS FABRICATED BY EXCIMER-LASER CRYSTALLIZATION, Electronics Letters, 34(9), 1998, pp. 924-926
EXCESS NOISE IN POLYSILICON THIN-FILM TRANSISTORS OPERATED IN KINK REGIME
Authors: GIOVANNINI S MARIUCCI L PECORA A FOGLIETTI V FORTUNATO G REITA C
Citation: S. Giovannini et al., EXCESS NOISE IN POLYSILICON THIN-FILM TRANSISTORS OPERATED IN KINK REGIME, Electronics Letters, 33(24), 1997, pp. 2075-2077
HOT-CARRIER-INDUCED MODIFICATIONS TO THE NOISE PERFORMANCE OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
Authors: GIOVANNINI S CARLUCCIO R MARIUCCI L PECORA A FORTUNATO G REITA C PLAIS F PRIBAT D
Citation: S. Giovannini et al., HOT-CARRIER-INDUCED MODIFICATIONS TO THE NOISE PERFORMANCE OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, Applied physics letters, 71(9), 1997, pp. 1216-1218
DENSITY-OF-STATES AND PHOTOCONDUCTIVITY LIGHT DEGRADATION IN A-SI-H AT DIFFERENT TEMPERATURES
Authors: MARIUCCI L SINNO G MINARINI C MITTIGA A
Citation: L. Mariucci et al., DENSITY-OF-STATES AND PHOTOCONDUCTIVITY LIGHT DEGRADATION IN A-SI-H AT DIFFERENT TEMPERATURES, Journal of non-crystalline solids, 200, 1996, pp. 482-485
HOT-HOLE-INDUCED DEGRADATION IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS - EXPERIMENTAL AND THEORETICAL-ANALYSIS
Authors: PECORA A TALLARIDA G FORTUNATO G MARIUCCI L REITA C MIGLIORATO P
Citation: A. Pecora et al., HOT-HOLE-INDUCED DEGRADATION IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS - EXPERIMENTAL AND THEORETICAL-ANALYSIS, IEE proceedings. Part G. Circuits, devices and systems, 141(1), 1994, pp. 33-37
HOT-CARRIER EFFECTS IN N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS - A CORRELATION BETWEEN OFF-CURRENT AND TRANSCONDUCTANCE VARIATIONS
Authors: FORTUNATO G PECORA A TALLARIDA G MARIUCCI L REITA C MIGLIORATO P
Citation: G. Fortunato et al., HOT-CARRIER EFFECTS IN N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS - A CORRELATION BETWEEN OFF-CURRENT AND TRANSCONDUCTANCE VARIATIONS, I.E.E.E. transactions on electron devices, 41(3), 1994, pp. 340-346
APPLICATION OF THE PHOTO INDUCED DISCHARGE TECHNIQUE FOR THE INVESTIGATION OF A-SI-H THIN-FILM-TRANSISTOR INSTABILITY
Authors: FORTUNATO G CARLUCCIO R MARIUCCI L
Citation: G. Fortunato et al., APPLICATION OF THE PHOTO INDUCED DISCHARGE TECHNIQUE FOR THE INVESTIGATION OF A-SI-H THIN-FILM-TRANSISTOR INSTABILITY, Journal of non-crystalline solids, 166, 1993, pp. 735-738
Risultati: 1-11 |