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Results: 1-25/35
Authors:
MARKWITZ A
PROKERT F
WALDSCHMIDT M
DEMORTIER G
Citation: A. Markwitz et al., X-RAY REFLECTIVITY INVESTIGATION OF NEAR-SURFACE DENSITY CHANGES INDUCED IN AL-AU MULTILAYERS BY HIGH-CURRENT ION-BEAM BOMBARDMENT, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 143(3), 1998, pp. 422-426
MICROSTRUCTURAL INVESTIGATION OF ION-BEAM SYNTHESIZED GERMANIUM NANOCLUSTERS EMBEDDED IN SIO2 LAYERS
Authors:
MARKWITZ A
SCHMIDT B
MATZ W
GROTZSCHEL R
MUCKLICH A
Citation: A. Markwitz et al., MICROSTRUCTURAL INVESTIGATION OF ION-BEAM SYNTHESIZED GERMANIUM NANOCLUSTERS EMBEDDED IN SIO2 LAYERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 142(3), 1998, pp. 338-348
Authors:
MARKWITZ A
DEMORTIER G
Citation: A. Markwitz et G. Demortier, LIGHT-ELEMENT IMPURITIES IN ION-BEAM BOMBARDED AU-AL LAYERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 516-520
Authors:
MARKWITZ A
MATZ W
Citation: A. Markwitz et W. Matz, PHASE-FORMATION IN ION-BEAM BOMBARDED AL-AU MULTILAYERS USING HIGH-CURRENT 2.0 MEV HE-4(+) IONS, Surface and interface analysis, 26(9), 1998, pp. 650-658
Authors:
MARKWITZ A
MATZ W
SCHMIDT B
GROTZSCHEL R
Citation: A. Markwitz et al., DEPTH PROFILE ANALYSIS - STEM-EDX VS. RBS, Surface and interface analysis, 26(5), 1998, pp. 359-366
Authors:
MARKWITZ A
MATZ W
WALDSCHMIDT M
DEMORTIER G
Citation: A. Markwitz et al., INVESTIGATION OF THE ATOMIC INTERDIFFUSION AND PHASE-FORMATION IN IONBEAM-IRRADIATED THIN CU-AL AND AG-AL MULTILAYERS BY IN-SITU RBS AND XRD, Surface and interface analysis, 26(2), 1998, pp. 160-174
Authors:
SEIFARTH H
GROTZSCHEL R
MARKWITZ A
MATZ W
NITZSCHE P
REBOHLE L
Citation: H. Seifarth et al., PREPARATION OF SIO2-FILMS WITH EMBEDDED SI NANOCRYSTALS BY REACTIVE RF MAGNETRON SPUTTERING, Thin solid films, 330(2), 1998, pp. 202-205
Authors:
REBOHLE L
VONBORANY J
GROTZSCHEL R
MARKWITZ A
SCHMIDT B
TYSCHENKO IE
SKORUPA W
FROB H
LEO K
Citation: L. Rebohle et al., STRONG BLUE AND VIOLET PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROMGE-IMPLANTED AND SI-IMPLANTED SILICON DIOXIDE, Physica status solidi. a, Applied research, 165(1), 1998, pp. 31-35
Authors:
MARKWITZ A
VANDESTEENE N
WALDSCHMIDT M
DEMORTIER G
Citation: A. Markwitz et al., CHARACTERIZATION OF THE INTERDIFFUSION IN AU-AL LAYERS BY RBS, Fresenius' journal of analytical chemistry, 358(1-2), 1997, pp. 59-63
Authors:
ARPS M
MARKWITZ A
Citation: M. Arps et A. Markwitz, IMPROVED CURRENT-VOLTAGE CHARACTERISTICS OF DOWNSTREAM PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION SINX DEPOSITED AT LOW-TEMPERATURE BY USINGHE AS A DILUTION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(4), 1997, pp. 1864-1873
Authors:
MARKWITZ A
MUCKLICH A
VONBORANY J
MATZ W
SKORUPA W
SCHMIDT B
MOLLER W
Citation: A. Markwitz et al., XTEM ANALYSIS OF GE NANOCLUSTERS IN THIN SIO2 LAYERS, European journal of cell biology, 74, 1997, pp. 122-122
Authors:
MARKWITZ A
ARPS M
BAUMANN H
DEMORTIER G
KRIMMEL EF
BETHGE K
Citation: A. Markwitz et al., STUDY OF ELECTRONIC-PROPERTIES AND DEPTH PROFILES OF BURIED AND NEAR-SURFACE SILICON-NITRIDE LAYERS PRODUCED BY ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 124(4), 1997, pp. 506-514
Authors:
MARKWITZ A
RUVALCABASIL JL
DEMORTIER G
Citation: A. Markwitz et al., LIGHT-ELEMENT DETECTION IN HEAVY MATRICES BY HIGH-ENERGY BACKSCATTERING SPECTROSCOPY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 122(4), 1997, pp. 685-688
Authors:
MARKWITZ A
DEMORTIER G
Citation: A. Markwitz et G. Demortier, SURFACE AND LAYER STATE OF THIN AU-AL LAYERS AFTER HIGH-ENERGY ION IRRADIATION MEASURED BY RES, SCANNING ION MICROPROBE AND SEM, Surface and interface analysis, 25(11), 1997, pp. 889-895
Authors:
MARKWITZ A
BAUMANN H
MICHELMANN RW
MEYER JD
KRIMMEL EF
BETHGE K
Citation: A. Markwitz et al., MOLECULAR ION-IMPLANTATION IN SILICON, Mikrochimica acta, 125(1-4), 1997, pp. 313-316
Authors:
MARKWITZ A
BAUMANN H
MICHELMANN RW
MEYER JD
KRIMMEL EF
BETHGE K
Citation: A. Markwitz et al., NITROGEN DEPTH DISTRIBUTION, INTERFACE AND STRUCTURE-ANALYSIS OF SINXLAYERS PRODUCED BY LOW-ENERGY ION-IMPLANTATION, Mikrochimica acta, 125(1-4), 1997, pp. 337-341
Authors:
VONBORANY J
GROTZSCHEL R
HEINIG KH
MARKWITZ A
MATZ W
SCHMIDT B
SKORUPA W
Citation: J. Vonborany et al., MULTIMODAL IMPURITY REDISTRIBUTION AND NANOCLUSTER FORMATION IN GE IMPLANTED SILICON DIOXIDE FILMS, Applied physics letters, 71(22), 1997, pp. 3215-3217
Authors:
MARKWITZ A
ARPS M
BAUMANN H
KRIMMEL EF
BETHGE K
Citation: A. Markwitz et al., DEPTH PROFILE ANALYSIS AND STUDY OF THE ELECTRONIC-PROPERTIES OF SILICON-NITRIDE LAYERS PRODUCED BY ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 113(1-4), 1996, pp. 223-226
Authors:
PALOURA EC
GINOUDI A
MARKWITZ A
LIOUTAS C
KATSIKINI M
BETHGE K
AMINPIROOZ S
ROSSNER H
HOLUBKRAPPE E
ZORBA T
SIAPKAS D
Citation: Ec. Paloura et al., MICROSTRUCTURAL CHARACTERIZATION OF STOICHIOMETRIC BURIED SI3N4 FILMS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 113(1-4), 1996, pp. 227-230
Authors:
LINK F
BAUMANN H
MARKWITZ A
KRIMMEL EF
BETHGE K
Citation: F. Link et al., LOW-ENERGY N-15 IMPLANTATION IN CARBON FOR THE SYNTHESIS OF CARBON NITRIDE LAYERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 113(1-4), 1996, pp. 235-238
Authors:
MARKWITZ A
KLEIN S
MICHELMANN RW
BAUMANN H
KRIMMEL EF
BETHGE K
Citation: A. Markwitz et al., LAYER AND INTERFACE ANALYSIS OF ULTRA-THIN ION-BEAM PRODUCED SILICON-NITRIDE LAYERS BY NRA AND TEM, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 284-288
Authors:
MICHELMANN RW
BAUMANN H
MARKWITZ A
MEYER JD
BETHGE K
Citation: Rw. Michelmann et al., INVESTIGATION OF ULTRA-THIN SINXOY LAYERS PRODUCED BY LOW-ENERGY ION-IMPLANTATION WITH NRA AND CHANNELING-RBS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 108(1-2), 1996, pp. 62-64
Authors:
MARKWITZ A
DEMORTIER G
Citation: A. Markwitz et G. Demortier, DEPTH PROFILING BY ION-BEAMS ANALYSIS TECHNIQUES FOR THE CHARACTERIZATION OF INTERDIFFUSION IN MULTILAYERED AU-AL SYSTEMS, Surface and interface analysis, 24(13), 1996, pp. 868-874
Authors:
PALOURA EC
LIOUTAS C
MARKWITZ A
Citation: Ec. Paloura et al., CHARACTERIZATION OF STOICHIOMETRIC SURFACE AND BURIED SIN FILMS FABRICATED BY ION-IMPLANTATION USING EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE, Journal of applied physics, 80(5), 1996, pp. 2720-2727
Authors:
MARKWITZ A
BAUMANN H
GRILL W
HEINZ B
ROSELER A
KRIMMEL EF
BETHGE K
Citation: A. Markwitz et al., SURFACE-NEAR ANALYSES OF ULTRA-THIN SILICON-NITRIDE LAYERS BY NRA, CHANNELING RBS, FT IR ELLIPSOMETRY AND AFM, Fresenius' journal of analytical chemistry, 353(5-8), 1995, pp. 734-739