AAAAAA
Results:
1-23
|
Results: 23
Authors:
GARCIA S
MARTIN JM
MARTIL I
FERNANDEZ M
GONZALEZDIAZ G
Citation: S. Garcia et al., DEPOSITION OF LOW-TEMPERATURE SI-BASED INSULATORS BY THE ELECTRON-CYCLOTRON-RESONANCE PLASMA METHOD, Thin solid films, 317(1-2), 1998, pp. 116-119
Authors:
GARCIA S
MARTIN JM
MARTIL I
GONZALEZDIAZ G
Citation: S. Garcia et al., DEPENDENCE OF THE PHYSICAL-PROPERTIES OF SINX-H FILMS DEPOSITED BY THE ECR PLASMA METHOD ON THE DISCHARGE SIZE, Thin solid films, 315(1-2), 1998, pp. 22-28
Authors:
MARTINEZ FL
MARTIL I
GONZALEZDIAZ G
SELLE B
SIEBER I
Citation: Fl. Martinez et al., INFLUENCE OF RAPID THERMAL ANNEALING PROCESSES ON THE PROPERTIES OF SINX-H FILMS DEPOSITED BY THE ELECTRON-CYCLOTRON-RESONANCE METHOD, Journal of non-crystalline solids, 230, 1998, pp. 523-527
Authors:
GARCIA S
MARTIL I
DIAZ GG
CASTAN E
DUENAS S
FERNANDEZ M
Citation: S. Garcia et al., DEPOSITION OF SINX-H THIN-FILMS BY THE ELECTRON-CYCLOTRON-RESONANCE AND ITS APPLICATION TO AL SINX-H/SI STRUCTURES/, Journal of applied physics, 83(1), 1998, pp. 332-338
Authors:
GARCIA S
MARTIL I
DIAZ GG
CASTAN E
DUENAS S
FERNANDEZ M
Citation: S. Garcia et al., GOOD QUALITY AL SINX-H/INP METAL-INSULATOR-SEMICONDUCTOR DEVICES OBTAINED WITH ELECTRON-CYCLOTRON-RESONANCE PLASMA METHOD/, Journal of applied physics, 83(1), 1998, pp. 600-603
Authors:
MARTIL I
MARTIN JM
GARCIA S
GONZALEZDIAZ G
Citation: I. Martil et al., EXPERIMENTAL-VERIFICATION OF THE PHYSICS AND STRUCTURE OF THE BIPOLARJUNCTION TRANSISTOR, IEEE transactions on education, 41(3), 1998, pp. 224-228
Authors:
GARCIA S
MARTIL I
DIAZ GG
FERNANDEZ M
Citation: S. Garcia et al., THE INFLUENCE OF SINX-H FILM PROPERTIES ON THE ELECTRICAL CHARACTERISTICS OF METAL-INSULATOR-SEMICONDUCTOR DEVICES, Semiconductor science and technology, 12(12), 1997, pp. 1650-1653
Authors:
MARTIL I
REDONDO E
OJEDA A
Citation: I. Martil et al., INFLUENCE OF DEFECTS ON THE ELECTRICAL AND OPTICAL CHARACTERISTICS OFBLUE-LIGHT-EMITTING DIODES BASED ON III-V NITRIDES, Journal of applied physics, 81(5), 1997, pp. 2442-2444
Authors:
MARTIL I
MARTINEZ FL
LUCIA ML
Citation: I. Martil et al., AN UNDERGRADUATE EXPERIMENT - THE DETERMINATION OF THE STRUCTURE OF GE AND SI BASED BIPOLAR-TRANSISTORS, International Journal of Electrical Engineering Education, 34(1), 1997, pp. 16-28
Authors:
DUENAS S
PELAEZ R
CASTAN E
PINACHO R
QUINTANILLA L
BARBOLLA J
MARTIL I
GONZALEZDIAZ G
Citation: S. Duenas et al., EXPERIMENTAL-OBSERVATION OF CONDUCTANCE TRANSIENTS IN AL SINX-H/SI METAL-INSULATOR-SEMICONDUCTOR STRUCTURES/, Applied physics letters, 71(6), 1997, pp. 826-828
Authors:
REDONDO E
OJEDA A
DIAZ GG
MARTIL I
Citation: E. Redondo et al., A LABORATORY EXPERIMENT WITH BLUE-LIGHT-EMITTING DIODES, American journal of physics, 65(5), 1997, pp. 371-376
Authors:
GARCIA S
MARTIN JM
FERNANDEZ M
MARTIL I
GONZALEZDIAZ G
Citation: S. Garcia et al., PROPERTIES OF A-SINX-H FILMS DEPOSITED AT ROOM-TEMPERATURE BY THE ELECTRON-CYCLOTRON-RESONANCE PLASMA METHOD, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 73(3), 1996, pp. 487-502
Authors:
MARTIN JM
SANCHEZ SG
MARTIL I
GONZALEZDIAZ G
Citation: Jm. Martin et al., DC CHARACTERIZATION OF FULLY ION-IMPLANTED P-N-JUNCTIONS INTO SEMIINSULATING INP, I.E.E.E. transactions on electron devices, 43(3), 1996, pp. 396-401
ANALYSIS OF THE OXYGEN CONTAMINATION PRESENT IN SINX FILMS DEPOSITED BY ELECTRON-CYCLOTRON-RESONANCE
Authors:
GARCIA S
MARTIN JM
FERNANDEZ M
MARTIL I
GONZALEZDIAZ G
Citation: S. Garcia et al., ANALYSIS OF THE OXYGEN CONTAMINATION PRESENT IN SINX FILMS DEPOSITED BY ELECTRON-CYCLOTRON-RESONANCE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 826-830
Authors:
HERNANDEZROJAS JL
MARTIL I
SANTAMARIA J
GONZALEZDIAZ G
SANCHEZQUESADA F
Citation: Jl. Hernandezrojas et al., GROWTH OF CHALCOPYRITE CU(IN,GA)SE-2 CUIN3SE5 ABSORBERS BY RADIO-FREQUENCY SPUTTERING/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 1083-1087
Authors:
MARTIN JM
GARCIA S
CALLE F
MARTIL I
GONZALEZDIAZ G
Citation: Jm. Martin et al., ELECTRICAL AND OPTICAL CHARACTERIZATION OF MG, MG P, AND MG/AR IMPLANTS INTO INP-FE/, Journal of electronic materials, 24(1), 1995, pp. 59-67
Authors:
MARTIN JM
GARCIA S
MARTIL I
GONZALEZDIAZ G
CUSCO R
ARTUS L
Citation: Jm. Martin et al., ELECTRICAL AND OPTICAL CHARACTERIZATION OF SILICON AND SILICON PHOSPHORUS IMPLANTS IN INP DOPED WITH IRON, Materials science and technology, 11(11), 1995, pp. 1203-1206
Authors:
GARCIA S
MARTIN JM
MARTIL I
FERNANDEZ M
IBORRA E
GONZALEZDIAZ G
Citation: S. Garcia et al., INFLUENCE OF THE DEPOSITION PARAMETERS ON THE BONDING AND OPTICAL-PROPERTIES OF SINX ECR FILMS, Journal of non-crystalline solids, 187, 1995, pp. 329-333
Authors:
MARTIN JM
GARCIA S
MARTIL I
GONZALEZDIAZ G
CASTAN E
DUENAS S
Citation: Jm. Martin et al., DEEP-LEVEL TRANSIENT SPECTROSCOPY AND ELECTRICAL CHARACTERIZATION OF ION-IMPLANTED P-N-JUNCTIONS INTO UNDOPED INP, Journal of applied physics, 78(9), 1995, pp. 5325-5330
Authors:
GARCIA S
BRAVO D
FERNANDEZ M
MARTIL I
LOPEZ FJ
Citation: S. Garcia et al., ROLE OF OXYGEN ON THE DANGLING BOND CONFIGURATION OF LOW-OXYGEN CONTENT SINX-H FILMS DEPOSITED AT ROOM-TEMPERATURE, Applied physics letters, 67(22), 1995, pp. 3263-3265
Authors:
GARCIA S
MARTIN JM
MARTIL I
GONZALEZDIAZ G
Citation: S. Garcia et al., OPTICAL CHARACTERIZATION OF SILICON-NITRIDE FILMS DEPOSITED BY ECR-CVD, Vacuum, 45(10-11), 1994, pp. 1027-1028
Authors:
HERNANDEZROJAS JL
LUCIA ML
MARTIL I
GONZALEZDIAZ G
SANTAMARIA J
SANCHEZQUESADA F
Citation: Jl. Hernandezrojas et al., STOICHIOMETRY CONTROL OVER A WIDE COMPOSITION RANGE OF SPUTTERED CUGAXIN(1-X)SE2, Applied physics letters, 64(10), 1994, pp. 1239-1241
Authors:
HERNANDEZROJAS JL
LUCIA ML
SANTAMARIA J
GONZALEZDIAZ G
MARTIL I
SANCHEZQUESADA F
Citation: Jl. Hernandezrojas et al., EMISSION-LINE INTENSITIES IN AN RF-SPUTTERING GLOW-DISCHARGE SYSTEM, Thin solid films, 228(1-2), 1993, pp. 133-136
Risultati:
1-23
|