AAAAAA
Results:
1-22
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Results: 22
Authors:
BERTRU N
BARANOV A
CUMINAL Y
ALMUNEAU G
GENTY F
JOULLIE A
BRANDT O
MAZUELAS A
PLOOG KH
Citation: N. Bertru et al., LONG-WAVELENGTH (GA, IN)SB GASB STRAINED-QUANTUM-WELL LASERS GROWN BYMOLECULAR-BEAM EPITAXY/, Semiconductor science and technology, 13(8), 1998, pp. 936-940
Authors:
MAZUELAS A
HEY R
JENICHEN B
GRAHN HT
Citation: A. Mazuelas et al., X-RAY-INVESTIGATION OF STRAIN-COMPENSATED GAAS-C ALAS-C DISTRIBUTED BRAGG REFLECTORS/, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 313-320
Authors:
BERTRU N
BRANDT O
KLANN R
MAZUELAS A
ULRICI W
PLOOG KH
Citation: N. Bertru et al., EXCITONS IN STRAINED (GA,IN)SB GASB QUANTUM-WELLS/, Physical review. B, Condensed matter, 55(7), 1997, pp. 4503-4505
Authors:
MAZUELAS A
HEY R
WASSERMEIER M
GRAHN HT
Citation: A. Mazuelas et al., STRAIN COMPENSATION IN HIGHLY CARBON-DOPED GAAS ALAS DISTRIBUTED BRAGG REFLECTORS/, Journal of crystal growth, 175, 1997, pp. 383-386
Authors:
MAZUELAS A
HEY R
JENICHEN B
GRAHN HT
Citation: A. Mazuelas et al., ALTERNATING BE AND C DOPING FOR STRAIN COMPENSATED GAAS ALAS DISTRIBUTED BRAGG REFLECTORS/, Applied physics letters, 70(16), 1997, pp. 2088-2090
Authors:
NORENBERG H
MAZUELAS A
HAGENSTEIN K
HEY R
GRAHN HT
Citation: H. Norenberg et al., OPTIMIZATION OF CARBON INCORPORATION IN GAAS DURING MOLECULAR-BEAM EPITAXIAL-GROWTH, Applied physics A: Materials science & processing, 62(5), 1996, pp. 459-461
Authors:
BERTRU N
KLANN R
MAZUELAS A
BRANDT O
GAILLARD S
Citation: N. Bertru et al., STRUCTURAL AND OPTICAL-PROPERTIES OF STRAINED (GA,IN)SB GASB QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY/, Applied physics letters, 69(15), 1996, pp. 2237-2239
Authors:
MAZUELAS A
NORENBERG H
HEY R
GRAHN HT
Citation: A. Mazuelas et al., GROWTH AND X-RAY CHARACTERIZATION OF STRAIN COMPENSATED GAAS ALAS DISTRIBUTED BRAGG REFLECTORS/, Applied physics letters, 68(6), 1996, pp. 806-808
Authors:
MAZUELAS A
ILG M
JENICHEN B
ALONSO MI
PLOOG KH
Citation: A. Mazuelas et al., ANISOTROPIES IN THE STRUCTURAL-PROPERTIES OF STRAINED (311) (IN,GA)ASGAAS-HETEROSTRUCTURES/, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 159-163
Authors:
MAZUELAS A
MAIER M
WAGNER J
TRAMPERT A
FISCHER A
PLOOG KH
Citation: A. Mazuelas et al., HIGH-CARBON DOPING OF GA1-XINXAS (X-APPROXIMATE-TO-0.01) GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 150(1-4), 1995, pp. 251-255
Authors:
ILG M
ALONSO MI
MAZUELAS A
TOURNIE E
PLOOG KH
Citation: M. Ilg et al., ASPECTS OF LOW HETEROSTRUCTURE SYMMETRY IN (311)A (IN,GA)AS GAAS/, Journal of crystal growth, 150(1-4), 1995, pp. 482-486
Authors:
ALVAREZ AL
CALLE F
SACEDON A
CALLEJA E
MUNOZ E
WAGNER J
MAIER M
MAZUELAS A
PLOOG KH
Citation: Al. Alvarez et al., A RAMAN-SPECTROSCOPIC STUDY OF THE SI, BE, AND C INCORPORATION IN INXGA1-XAS RELAXED LAYERS, Journal of applied physics, 78(7), 1995, pp. 4690-4695
Authors:
KUBALL M
CARDONA M
MAZUELAS A
PLOOG KH
PEREZCAMACHO JJ
SILVEIRA JP
BRIONES F
Citation: M. Kuball et al., SNTE-DOPING OF GAAS GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY, Journal of applied physics, 77(9), 1995, pp. 4339-4342
Authors:
PRITCHARD RE
NEWMAN RC
WAGNER J
MAIER M
MAZUELAS A
PLOOG KH
LANE PA
MARTIN T
WHITEHOUSE CR
Citation: Re. Pritchard et al., DETERMINATION OF THE BONDING OF CARBON ACCEPTORS IN INXGA1-XAS FOR X-LESS-THAN-0.1, Applied physics letters, 66(20), 1995, pp. 2676-2678
Authors:
MELENDEZ J
ARMELLES G
MAZUELAS A
RUIZ A
BACQUET G
HASSEN F
Citation: J. Melendez et al., BAND-OFFSET TRANSITIVITY IS THE ALGAAS GAP/INP SYSTEM/, JPN J A P 1, 33(9A), 1994, pp. 4855-4858
Authors:
BALLESTEROS C
GERTHSEN D
MAZUELAS A
RUIZ A
BRIONES F
Citation: C. Ballesteros et al., HIGH-RESOLUTION ELECTRON-MICROSCOPY AND X-RAY-DIFFRACTION CHARACTERIZATION OF ALTERNATELY STRAINED (GAAS)N (GAP)M (GAAS)N (INP)M SUPERLATTICES GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 69(5), 1994, pp. 871-880
Authors:
MAZUELAS A
RUIZ A
Citation: A. Mazuelas et A. Ruiz, GROWTH AND CHARACTERIZATION BY X-RAY-DIFFRACTION OF GAP INP SHORT-PERIOD SUPERLATTICES/, Journal of crystal growth, 135(1-2), 1994, pp. 123-128
Authors:
MAZUELAS A
RUIZ A
PONCE F
BRIONES F
Citation: A. Mazuelas et al., STRUCTURAL CHARACTERIZATION OF GAAS GAP SUPERLATTICES/, Journal of physics. D, Applied physics, 26(4A), 1993, pp. 167-172
Authors:
MAZUELAS A
GONZALEZ L
PONCE FA
TAPFER L
BRIONES F
Citation: A. Mazuelas et al., CRITICAL THICKNESS DETERMINATION OF INAS, INP AND GAP ON GAAS BY X-RAY INTERFERENCE EFFECT AND TRANSMISSION ELECTRON-MICROSCOPY, Journal of crystal growth, 131(3-4), 1993, pp. 465-469
Authors:
DOTOR ML
MELENDEZ J
HUERTAS P
MAZUELAS A
GARRIGA M
GOLMAYO D
BRIONES F
Citation: Ml. Dotor et al., QUANTUM-WELL LASERS WITH INAS MONOLAYERS IN THE ACTIVE REGION GROWN AT LOW-TEMPERATURE BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 127(1-4), 1993, pp. 46-49
Authors:
MAZUELAS A
MOLINA SI
ARAGON G
MELENDEZ J
DOTOR ML
HUERTAS P
BRIONES F
Citation: A. Mazuelas et al., STRUCTURAL CHARACTERIZATION OF HIGHLY STRAINED INAS N-MONOLAYER LASERS AND QUANTUM-WELL STRUCTURES BY X-RAY-DIFFRACTION AND TRANSMISSION ELECTRON-MICROSCOPY, Journal of crystal growth, 127(1-4), 1993, pp. 596-600
Authors:
MAZUELAS A
MELENDEZ J
DOMINGUEZ PS
GARRIGA M
BALLESTEROS C
GERTHSEN D
BRIONES F
Citation: A. Mazuelas et al., STRUCTURAL AND OPTICAL CHARACTERIZATION OF ALTERNATELY STRAINED GAAS GAP/GAAS/INP SUPERLATTICES GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 127(1-4), 1993, pp. 623-626
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