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Results: 1-10 |
Results: 10
ROLE OF RECOVERY ANNEALS FOR CHEMICAL SOLUTION DEPOSITION (CSD) BASEDSRBI2TA2O9 (SBT) THIN-FILMS
Authors: HARTNER W SCHINDLER G WEINRICH V NAGEL N ENGELHARDT M JOSHI W SOLAYAPPAN N DERBENWICK G DEHM C MAZURE C
Citation: W. Hartner et al., ROLE OF RECOVERY ANNEALS FOR CHEMICAL SOLUTION DEPOSITION (CSD) BASEDSRBI2TA2O9 (SBT) THIN-FILMS, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 543-553
THE ROLE OF RAPID THERMAL-PROCESSING IN CRYSTALLIZATION OF SBT THIN-FILMS
Authors: JOSHI V SOLAYAPPAN N HARTNER W SCHINDLER G DEHM C MAZURE C DERBENWICK G
Citation: V. Joshi et al., THE ROLE OF RAPID THERMAL-PROCESSING IN CRYSTALLIZATION OF SBT THIN-FILMS, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 595-601
TECHNOLOGY CHALLENGES AND SOLUTIONS FOR 1GBIT AND BEYOND
Authors: MAZURE C ALSMEIER J DEHM C HONLEIN W
Citation: C. Mazure et al., TECHNOLOGY CHALLENGES AND SOLUTIONS FOR 1GBIT AND BEYOND, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 15-25
PROPERTIES OF SRBI2TA2O9 THIN-FILMS GROWN BY MOCVD FOR HIGH-DENSITY FERAM APPLICATIONS
Authors: HINTERMAIER F HENDRIX B DESROCHERS D ROEDER J BAUM T VANBUSKIRK P BOLTEN D GROSSMANN M LOHSE O SCHUMACHER M WASER R CERVA H DEHM C FRITSCH E HONLEIN W MAZURE C NAGEL N THWAITE P WENDT H
Citation: F. Hintermaier et al., PROPERTIES OF SRBI2TA2O9 THIN-FILMS GROWN BY MOCVD FOR HIGH-DENSITY FERAM APPLICATIONS, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 367-379
INFLUENCE OF TI-CONTENT IN THE BOTTOM ELECTRODES ON THE FERROELECTRICPROPERTIES OF SRBI2TA2O9 (SBT)
Authors: SCHINDLER G HARTNER W JOSHI V SOLAYAPPAN N DERBENWICK G MAZURE C
Citation: G. Schindler et al., INFLUENCE OF TI-CONTENT IN THE BOTTOM ELECTRODES ON THE FERROELECTRICPROPERTIES OF SRBI2TA2O9 (SBT), Integrated ferroelectrics, 17(1-4), 1997, pp. 421-432
AUDITORY INFORMATION-PROCESSING AND HALLUCINATED VOICES
Authors: HOFFMAN RE RAPAPORT J QUINLAN D MAZURE C MCGLASHAN T
Citation: Re. Hoffman et al., AUDITORY INFORMATION-PROCESSING AND HALLUCINATED VOICES, Biological psychiatry, 41, 1997, pp. 15-15
MAGNETIC-RESONANCE IMAGING-BASED MEASUREMENT OF HIPPOCAMPAL VOLUME INPOSTTRAUMATIC-STRESS-DISORDER RELATED TO CHILDHOOD PHYSICAL AND SEXUAL ABUSE - A PRELIMINARY-REPORT
Authors: BREMNER JD RANDALL P VERMETTEN E STAIB L BRONEN RA MAZURE C CAPELLI S MCCARTHY G INNIS RB CHARNEY DS
Citation: Jd. Bremner et al., MAGNETIC-RESONANCE IMAGING-BASED MEASUREMENT OF HIPPOCAMPAL VOLUME INPOSTTRAUMATIC-STRESS-DISORDER RELATED TO CHILDHOOD PHYSICAL AND SEXUAL ABUSE - A PRELIMINARY-REPORT, Biological psychiatry, 41(1), 1997, pp. 23-32
SCALING OF POLY-ENCAPSULATED LOCOS FOR 0.35 MU-M CMOS TECHNOLOGY (VOL41, PG 56, 1994)
Authors: KENKARE PU MAZURE C HAYDEN JD PFIESTER JR KO J KIRSCH HC AJURIA SA CRABTREE P VUONG T
Citation: Pu. Kenkare et al., SCALING OF POLY-ENCAPSULATED LOCOS FOR 0.35 MU-M CMOS TECHNOLOGY (VOL41, PG 56, 1994), I.E.E.E. transactions on electron devices, 42(8), 1995, pp. 1564-1564
A QUADRUPLE WELL, QUADRUPLE POLYSILICON BICMOS PROCESS FOR FAST 16 MBSRAMS
Authors: HAYDEN JD TAFT RC KENKARE P MAZURE C GUNDERSON C NGUYEN BY WOO M LAGE C ROMAN BJ RADHAKRISHNA S SUBRAHMANYAN R SITARAM AR PELLEY P LIN JH KEMP K KIRSCH H
Citation: Jd. Hayden et al., A QUADRUPLE WELL, QUADRUPLE POLYSILICON BICMOS PROCESS FOR FAST 16 MBSRAMS, I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2318-2325
SCALING OF POLY-ENCAPSULATED LOCOS FOR 0.35 MU-M CMOS TECHNOLOGY
Authors: KENKARE PU MAZURE C HAYDEN JD PFIESTER JR KO J KIRSCH HC AJURIA SA CRABTREE P VUONG T
Citation: Pu. Kenkare et al., SCALING OF POLY-ENCAPSULATED LOCOS FOR 0.35 MU-M CMOS TECHNOLOGY, I.E.E.E. transactions on electron devices, 41(1), 1994, pp. 56-62
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