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Results:
1-10
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Results: 10
Authors:
HANEMAN D
MCALPINE NS
BUSCH E
KAALUND C
Citation: D. Haneman et al., SEMICONDUCTOR BOND RUPTURE PHENOMENA AND SURFACE-PROPERTIES, Applied surface science, 92, 1996, pp. 484-490
Authors:
ZHAO D
HANEMAN D
MCALPINE NS
Citation: D. Zhao et al., DETECTION OF TEMPERATURE RISE DURING CLEAVAGE OF SILICON, Surface science, 369(1-3), 1996, pp. 76-84
Authors:
MCALPINE NS
MCCONVILLE P
HANEMAN D
CHERNYAK L
CAHEN D
Citation: Ns. Mcalpine et al., JUNCTION SHARPNESS IN FIELD-INDUCED TRANSISTOR STRUCTURES IN CUXAG1-XINSE2, Journal of applied physics, 79(9), 1996, pp. 7370-7372
Authors:
BUSCH E
HANEMAN D
MCALPINE NS
Citation: E. Busch et al., EFFECT OF ELECTRIC-CURRENT ON DURATION OF CLEAVAGE LUMINESCENCE, Applied physics letters, 68(3), 1996, pp. 385-387
Authors:
KAALUND CJ
HANEMAN D
MCALPINE NS
Citation: Cj. Kaalund et al., LOW-TEMPERATURE CLEAVAGE LUMINESCENCE OF SILICON, Surface science, 337(1-2), 1995, pp. 795-799
Authors:
MCALPINE NS
HANEMAN D
Citation: Ns. Mcalpine et D. Haneman, OBSERVATION AND ANALYSIS OF CONDUCTANCE OSCILLATIONS IN SCANNING-TUNNELING-MICROSCOPY OF CLEAN INP(110) SURFACES, Journal of applied physics, 78(9), 1995, pp. 5820-5821
Authors:
LI DG
MCALPINE NS
HANEMAN D
Citation: Dg. Li et al., CLEAVAGE LUMINESCENCE FROM INP, GE AND GEXSI1-X, Surface science, 303(1-2), 1994, pp. 171-178
Authors:
LI DG
HANEMAN D
MCALPINE NS
CHEN B
Citation: Dg. Li et al., VOLTAGE GENERATION ON CLEAVAGE OF SILICON, Physical review letters, 73(8), 1994, pp. 1170-1173
Authors:
SABETDARIANI R
MCALPINE NS
HANEMAN D
Citation: R. Sabetdariani et al., ELECTROLUMINESCENCE IN POROUS SILICON, Journal of applied physics, 75(12), 1994, pp. 8008-8011
Authors:
LI DG
MCALPINE NS
HANEMAN D
Citation: Dg. Li et al., PRECISION DETERMINATION OF LONG-WAVELENGTH CLEAVAGE LUMINESCENCE ENERGY AND DERIVATION OF MINIMUM SURFACE-STATE GAP ON CLEAN CLEAVED SI SURFACES, Surface science, 289(1-2), 1993, pp. 120000609-120000613
Risultati:
1-10
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