AAAAAA

   
Results: 1-18 |
Results: 18
MICROWAVE EXCITATION AND APPLICATIONS OF AN ELLIPTIC EXCIMER LAMP
Authors: HE ZM PRELAS MA MEESE JM LIN LT
Citation: Zm. He et al., MICROWAVE EXCITATION AND APPLICATIONS OF AN ELLIPTIC EXCIMER LAMP, Laser and particle beams, 16(3), 1998, pp. 509-524
GROWTH AND CHARACTERIZATION OF PHOSPHORUS-DOPED DIAMOND FILMS USING TRIMETHYL PHOSPHITE AS THE DOPING SOURCE
Authors: ROYCHOUDHURY R CHARLSON EJ STACY T HAJSAID M CHARLSON EM MEESE JM
Citation: R. Roychoudhury et al., GROWTH AND CHARACTERIZATION OF PHOSPHORUS-DOPED DIAMOND FILMS USING TRIMETHYL PHOSPHITE AS THE DOPING SOURCE, Journal of applied physics, 81(8), 1997, pp. 3644-3646
SMOOTH DIAMOND FILMS GROWN BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION ON POSITIVELY BIASED SILICON SUBSTRATES (VOL 10, PG 2011, 1995)
Authors: POPOVICI G CHAO CH PRELAS MA CHARLSON EJ MEESE JM WHITE HW CHAMBERLAIN JE
Citation: G. Popovici et al., SMOOTH DIAMOND FILMS GROWN BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION ON POSITIVELY BIASED SILICON SUBSTRATES (VOL 10, PG 2011, 1995), Journal of materials research, 11(2), 1996, pp. 545-545
FLUX MASKING AND THICKNESS UNIFORMITY IN MOLECULAR-BEAM EPITAXY
Authors: SADRA K LIN CH MEESE JM
Citation: K. Sadra et al., FLUX MASKING AND THICKNESS UNIFORMITY IN MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2269-2275
SMOOTH DIAMOND FILMS GROWN BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION ON POSITIVELY BIASED SILICON SUBSTRATES
Authors: POPOVICI G CHAO CH PRELAS MA CHARLSON EJ MEESE JM
Citation: G. Popovici et al., SMOOTH DIAMOND FILMS GROWN BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION ON POSITIVELY BIASED SILICON SUBSTRATES, Journal of materials research, 10(8), 1995, pp. 2011-2016
OPTICAL-PROPERTIES OF BULK ALXGA1-XAS (VOL 74, PG 6341, 1993)
Authors: LIN CH MEESE JM
Citation: Ch. Lin et Jm. Meese, OPTICAL-PROPERTIES OF BULK ALXGA1-XAS (VOL 74, PG 6341, 1993), Journal of applied physics, 77(1), 1995, pp. 444-444
NORMALLY ON GAAS ALAS MULTIPLE-QUANTUM-WELL FABRY-PEROT TRANSMISSION MODULATOR WITH ON/OFF CONTRAST RATIOS GREATER-THAN-7.4/
Authors: LIN CH GOOSSEN KW SADRA K MEESE JM WENG CJ
Citation: Ch. Lin et al., NORMALLY ON GAAS ALAS MULTIPLE-QUANTUM-WELL FABRY-PEROT TRANSMISSION MODULATOR WITH ON/OFF CONTRAST RATIOS GREATER-THAN-7.4/, Applied physics letters, 66(10), 1995, pp. 1222-1224
EFFECT OF GAAS ALGAAS QUANTUM-WELL STRUCTURE ON REFRACTIVE-INDEX/
Authors: LIN CH MEESE JM WROGE ML WENG CJ
Citation: Ch. Lin et al., EFFECT OF GAAS ALGAAS QUANTUM-WELL STRUCTURE ON REFRACTIVE-INDEX/, IEEE photonics technology letters, 6(5), 1994, pp. 623-625
GROWTH OF ORIENTED ALUMINUM NITRIDE FILMS ON SILICON BY CHEMICAL-VAPOR-DEPOSITION
Authors: KHAN AH ODEH MF MEESE JM CHARLSON EM CHARLSON EJ STACY T POPOVICI G PRELAS MA WRAGG JL
Citation: Ah. Khan et al., GROWTH OF ORIENTED ALUMINUM NITRIDE FILMS ON SILICON BY CHEMICAL-VAPOR-DEPOSITION, Journal of Materials Science, 29(16), 1994, pp. 4314-4318
SMOOTH DIAMOND FILMS GROWN BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION ON POSITIVELY BIASED SILICON SUBSTRATES
Authors: CHAO CH POPOVICI G CHARLSON EJ CHARLSON EM MEESE JM PRELAS MA
Citation: Ch. Chao et al., SMOOTH DIAMOND FILMS GROWN BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION ON POSITIVELY BIASED SILICON SUBSTRATES, Journal of crystal growth, 140(3-4), 1994, pp. 454-458
OPTICAL-PROPERTIES OF GAAS ALXGA1-XAS MULTIPLE-QUANTUM WELLS VERSUS ELECTRIC-FIELD INCLUDING EXCITON TRANSITION BROADENING EFFECTS IN OPTICAL MODULATORS/
Authors: LIN CH MEESE JM CHANG YC
Citation: Ch. Lin et al., OPTICAL-PROPERTIES OF GAAS ALXGA1-XAS MULTIPLE-QUANTUM WELLS VERSUS ELECTRIC-FIELD INCLUDING EXCITON TRANSITION BROADENING EFFECTS IN OPTICAL MODULATORS/, Journal of applied physics, 75(5), 1994, pp. 2618-2627
HIGH QUANTUM EFFICIENCY FOR PT2SI SCHOTTKY-BARRIER DIODES IN THE VACUUM-ULTRAVIOLET
Authors: HAJSAID M CHARLSON EJ CHARLSON EM ZHAO G MEESE JM STACY T POPOVICI G PRELAS MA
Citation: M. Hajsaid et al., HIGH QUANTUM EFFICIENCY FOR PT2SI SCHOTTKY-BARRIER DIODES IN THE VACUUM-ULTRAVIOLET, Journal of applied physics, 75(11), 1994, pp. 7588-7590
A LOW-VOLTAGE, HIGH-REFLECTANCE-CHANGE NORMALLY OFF REFRACTIVE GAAS AL0.2GA0.8AS MQW REFLECTION MODULATOR/
Authors: LIN CH MEESE JM CHANG YC
Citation: Ch. Lin et al., A LOW-VOLTAGE, HIGH-REFLECTANCE-CHANGE NORMALLY OFF REFRACTIVE GAAS AL0.2GA0.8AS MQW REFLECTION MODULATOR/, IEEE journal of quantum electronics, 30(5), 1994, pp. 1234-1240
PLASMA-ETCHED POLYCRYSTALLINE HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITED DIAMOND THIN-FILMS AND THEIR ELECTRICAL CHARACTERISTICS
Authors: LIAW BY STACY T ZHAO G CHARLSON EJ CHARLSON EM MEESE JM PRELAS MA
Citation: By. Liaw et al., PLASMA-ETCHED POLYCRYSTALLINE HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITED DIAMOND THIN-FILMS AND THEIR ELECTRICAL CHARACTERISTICS, Applied physics letters, 65(22), 1994, pp. 2827-2829
NORMALLY-ON GAAS ALAS MULTIPLE-WELL FABRY-PEROT REFLECTION MODULATORSFOR LARGE 2-DIMENSIONAL ARRAYS/
Authors: LIN CH GOOSSEN KW SADRA K MEESE JM
Citation: Ch. Lin et al., NORMALLY-ON GAAS ALAS MULTIPLE-WELL FABRY-PEROT REFLECTION MODULATORSFOR LARGE 2-DIMENSIONAL ARRAYS/, Applied physics letters, 65(10), 1994, pp. 1242-1244
DIAMOND PHOTOVOLTAIC CELLS AS A 1ST-WALL MATERIAL AND ENERGY-CONVERSION SYSTEM FOR INERTIAL CONFINEMENT FUSION
Authors: PRELAS MA CHARLSON EJ CHARLSON EM MEESE JM POPOVICI G STACY T
Citation: Ma. Prelas et al., DIAMOND PHOTOVOLTAIC CELLS AS A 1ST-WALL MATERIAL AND ENERGY-CONVERSION SYSTEM FOR INERTIAL CONFINEMENT FUSION, Laser and particle beams, 11(1), 1993, pp. 65-79
OPTICAL-PROPERTIES OF BULK ALXGA1-XAS
Authors: LIN CH MEESE JM
Citation: Ch. Lin et Jm. Meese, OPTICAL-PROPERTIES OF BULK ALXGA1-XAS, Journal of applied physics, 74(10), 1993, pp. 6341-6348
RECTIFYING CONTACT FORMATION WITH INDIUM ON POLYCRYSTALLINE P-TYPE HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITED DIAMOND UTILIZING MOLECULAR ION-IMPLANTATION
Authors: STACY T ZHAO G LIAW BY CHARLSON EJ CHARLSON EM MEESE JM POPOVICI G PRELAS M
Citation: T. Stacy et al., RECTIFYING CONTACT FORMATION WITH INDIUM ON POLYCRYSTALLINE P-TYPE HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITED DIAMOND UTILIZING MOLECULAR ION-IMPLANTATION, Journal of applied physics, 74(1), 1993, pp. 763-765
Risultati: 1-18 |