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Results: 1-14 |
Results: 14

Authors: DEGENDT S KNOTTER DM KENIS K DEPAS M MEURIS M MERTENS PW HEYNS MM
Citation: S. Degendt et al., IMPACT OF ORGANIC CONTAMINATION ON THIN GATE OXIDE QUALITY, JPN J A P 1, 37(9A), 1998, pp. 4649-4655

Authors: HOUSSA M NIGAM T MERTENS PW HEYNS MM
Citation: M. Houssa et al., MODEL FOR THE CURRENT-VOLTAGE CHARACTERISTICS OF ULTRATHIN GATE OXIDES AFTER SOFT BREAKDOWN, Journal of applied physics, 84(8), 1998, pp. 4351-4355

Authors: LOEWENSTEIN LM MERTENS PW
Citation: Lm. Loewenstein et Pw. Mertens, ADSORPTION OF METAL-IONS ONTO HYDROPHILIC SILICON SURFACES FROM AQUEOUS-SOLUTION - EFFECT OF PH, Journal of the Electrochemical Society, 145(8), 1998, pp. 2841-2847

Authors: DEGENDT S KNOTTER DM KENIS K MERTENS PW HEYNS MM
Citation: S. Degendt et al., IMPACT OF IRON CONTAMINATION AND ROUGHNESS GENERATED IN AMMONIA HYDROGEN-PEROXIDE MIXTURES (SC1) ON 5 NM GATE OXIDES, Journal of the Electrochemical Society, 145(7), 1998, pp. 2589-2594

Authors: HOUSSA M NIGAM T MERTENS PW HEYNS MM
Citation: M. Houssa et al., SOFT BREAKDOWN IN ULTRATHIN GATE OXIDES - CORRELATION WITH THE PERCOLATION THEORY OF NONLINEAR CONDUCTORS, Applied physics letters, 73(4), 1998, pp. 514-516

Authors: TEERLINCK I MERTENS PW SCHMIDT HF MEURIS M HEYNS MM
Citation: I. Teerlinck et al., IMPACT OF THE ELECTROCHEMICAL PROPERTIES OF SILICON-WAFER SURFACES ONCOPPER OUTPLATING FROM HF SOLUTIONS, Journal of the Electrochemical Society, 143(10), 1996, pp. 3323-3327

Authors: LI L BENDER H ZOU G MERTENS PW MEURIS MA HEYNS MM
Citation: L. Li et al., IMPROVEMENT OF HIGH-TEMPERATURE WATER RINSING AND DRYING FOR HF-LAST WAFER CLEANING, Journal of the Electrochemical Society, 143(1), 1996, pp. 233-237

Authors: SCHMIDT HF MEURIS M MERTENS PW ROTONDARO ALP HEYNS MM HURD TQ HATCHER Z
Citation: Hf. Schmidt et al., H2O2 DECOMPOSITION AND ITS IMPACT ON SILICON SURFACE ROUGHENING AND GATE OXIDE INTEGRITY, JPN J A P 1, 34(2B), 1995, pp. 727-731

Authors: DEPAS M VERMEIRE B MERTENS PW HEYNS MM
Citation: M. Depas et al., GROWTH-KINETICS AND ELECTRICAL CHARACTERISTICS OF ULTRA-THIN PYROGENIC SILICON-OXIDE, Microelectronic engineering, 28(1-4), 1995, pp. 125-128

Authors: MEURIS M MERTENS PW OPDEBEECK A SCHMIDT HF DEPAS M VEREECKE G HEYNS MM PHILIPOSSIAN A
Citation: M. Meuris et al., THE IMEC CLEAN - A NEW CONCEPT FOR PARTICLE AND METAL REMOVAL ON SI SURFACES, Solid state technology, 38(7), 1995, pp. 109

Authors: DEPAS M VERMEIRE B MERTENS PW VANMEIRHAEGHE RL HEYNS MM
Citation: M. Depas et al., DETERMINATION OF TUNNELING PARAMETERS IN ULTRA-THIN OXIDE LAYER POLY-SI SIO2/SI STRUCTURES/, Solid-state electronics, 38(8), 1995, pp. 1465-1471

Authors: LI L BENDER H TRENKLER T MERTENS PW MEURIS M VANDERVORST W HEYNS MM
Citation: L. Li et al., SURFACE PASSIVATION AND MICROROUGHNESS OF (100)SILICON ETCHED IN AQUEOUS HYDROGEN HALIDE (HF, HCL, HBR, HI) SOLUTIONS, Journal of applied physics, 77(3), 1995, pp. 1323-1325

Authors: MERTENS PW MAES HE
Citation: Pw. Mertens et He. Maes, STRESS IN THIN MICRO-ZONE-MOLTEN CRYSTALLINE SILICON FILMS ON SOLID SUBSTRATES, JPN J A P 1, 32(7), 1993, pp. 3217-3226

Authors: MEURIS M VERHAVERBEKE S MERTENS PW SCHMIDT HF HEYNS MM KUBOTA M PHILIPOSSIAN A DILLENBECK K GRAF D SCHNEGG A DEBLANK R
Citation: M. Meuris et al., CLEANING TECHNOLOGY FOR IMPROVED GATE OXIDE INTEGRITY, Microelectronic engineering, 22(1-4), 1993, pp. 21-28
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