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Results: 1-22 |
Results: 22
GROWTH OF INAS PHOTODIODE STRUCTURES FROM METALORGANIC COMPOUNDS
Authors: KIZHAEV SS MIKHAILOVA MP MOLCHANOV CC STOYANOV ND YAKOVLEV YP
Citation: Ss. Kizhaev et al., GROWTH OF INAS PHOTODIODE STRUCTURES FROM METALORGANIC COMPOUNDS, Technical physics letters, 24(4), 1998, pp. 247-249
DEPLETION OF THE INVERSE ELECTRON CHANNEL AT THE TYPE-II HETEROJUNCTION IN THE SYSTEM P-GAINASSB P-INAS/
Authors: VORONINA TI LAGUNOVA TS MIKHAILOVA MP MOISEEV KD ROSOV AE YAKOVLEV YP
Citation: Ti. Voronina et al., DEPLETION OF THE INVERSE ELECTRON CHANNEL AT THE TYPE-II HETEROJUNCTION IN THE SYSTEM P-GAINASSB P-INAS/, Semiconductors, 32(2), 1998, pp. 195-200
ELECTRON CHANNEL WITH HIGH CARRIER MOBILITY AT THE INTERFACE OF TYPE-II BROKEN-GAP P-GAINASSB P-INAS SINGLE HETEROJUNCTIONS/
Authors: MIKHAILOVA MP VORONINA TI LAGUNOVA TS MOISEEV KD OBUKHOV SA ROZOV AE YAKOVLEV YP
Citation: Mp. Mikhailova et al., ELECTRON CHANNEL WITH HIGH CARRIER MOBILITY AT THE INTERFACE OF TYPE-II BROKEN-GAP P-GAINASSB P-INAS SINGLE HETEROJUNCTIONS/, Superlattices and microstructures, 24(1), 1998, pp. 105-110
SUPERLUMINESCENCE IN AN ALGAASSB INGAASSB/ALGAASSB DOUBLE-HETEROSTRUCTURE/
Authors: MOISEEV KD MIKHAILOVA MP ANDREICHUK OV SAMORUKOV BE YAKOVLEV YP
Citation: Kd. Moiseev et al., SUPERLUMINESCENCE IN AN ALGAASSB INGAASSB/ALGAASSB DOUBLE-HETEROSTRUCTURE/, Technical physics letters, 23(5), 1997, pp. 364-366
NEW POTENTIAL APPLICATIONS OF SCANNING ELECTRON-MICROSCOPY TO STUDYING INASSB INASSBP LASERS/
Authors: SOLOVEV VA MIKHAILOVA MP STEPANOV MV SHERSTNEV VV YAKOVLEV YP
Citation: Va. Solovev et al., NEW POTENTIAL APPLICATIONS OF SCANNING ELECTRON-MICROSCOPY TO STUDYING INASSB INASSBP LASERS/, Technical physics letters, 23(3), 1997, pp. 233-235
PROPERTIES OF THE ELECTRON CHANNEL IN SINGLE GAINASSB P-INAS HETEROSTRUCTURES/
Authors: VORONINA TI LAGUNOV TS MIKHAILOVA MP MOISEEV KD OBUKHOV SA ROZOV AE YAKOVLEV YP
Citation: Ti. Voronina et al., PROPERTIES OF THE ELECTRON CHANNEL IN SINGLE GAINASSB P-INAS HETEROSTRUCTURES/, Technical physics letters, 23(2), 1997, pp. 128-129
INFRARED-LASER (LAMBDA=3.2 MU-M) BASED ON BROKEN-GAP TYPE-II HETEROJUNCTIONS WITH IMPROVED TEMPERATURE CHARACTERISTICS
Authors: MOISEEV KD MIKHAILOVA MP ERSHOV OG YAKOVLEV YP
Citation: Kd. Moiseev et al., INFRARED-LASER (LAMBDA=3.2 MU-M) BASED ON BROKEN-GAP TYPE-II HETEROJUNCTIONS WITH IMPROVED TEMPERATURE CHARACTERISTICS, Technical physics letters, 23(2), 1997, pp. 151-153
ELECTRONIC TRANSPORT IN A TYPE-II GAINASSB P-INAS HETEROJUNCTION WITHDIFFERENT DOPING LEVELS OF THE SOLID-SOLUTION/
Authors: VORONINA TI LAGUNOVA TS MIKHAILOVA MP MOISEEV KD SIPOVSKAYA MA YAKOVLEV YP
Citation: Ti. Voronina et al., ELECTRONIC TRANSPORT IN A TYPE-II GAINASSB P-INAS HETEROJUNCTION WITHDIFFERENT DOPING LEVELS OF THE SOLID-SOLUTION/, Semiconductors, 31(8), 1997, pp. 763-767
SULFIDE PASSIVATION OF GASB GAINASSB/GAALASSB PHOTODIODE HETEROSTRUCTURES/
Authors: ANDREEV IA KUNITSYNA EV LANTRATOV VM LVOVA TV MIKHAILOVA MP YAKOVLEV YP
Citation: Ia. Andreev et al., SULFIDE PASSIVATION OF GASB GAINASSB/GAALASSB PHOTODIODE HETEROSTRUCTURES/, Semiconductors, 31(6), 1997, pp. 556-559
RADIATIVE RECOMBINATION ON THE INTERFACE IN A P-GAINASSB P-INAS TYPE-II (BROKEN-GAP) HETEROSTRUCTURE UPON PULSED EXCITATION/
Authors: BAZHENOV NL ZEGRYA GG MIKHAILOVA MP MOISEEV KD SMIRNOV VA SOLOVEVA OY YAKOVLEV YP
Citation: Nl. Bazhenov et al., RADIATIVE RECOMBINATION ON THE INTERFACE IN A P-GAINASSB P-INAS TYPE-II (BROKEN-GAP) HETEROSTRUCTURE UPON PULSED EXCITATION/, Semiconductors, 31(6), 1997, pp. 560-562
SOLID-SOLUTION INXGA1-XASYSBZP1-Y-Z - A NEW MATERIAL FOR INFRARED OPTOELECTRONICS .1. THERMODYNAMIC ANALYSIS OF THE CONDITIONS FOR OBTAINING SOLID-SOLUTIONS, ISOPERIODIC TO INAS AND GASB SUBSTRATES, BY LIQUID-PHASE EPITAXY
Authors: CHARYKOV NA LITVAK AM MIKHAILOVA MP MOISEEV KD YAKOVLEV YP
Citation: Na. Charykov et al., SOLID-SOLUTION INXGA1-XASYSBZP1-Y-Z - A NEW MATERIAL FOR INFRARED OPTOELECTRONICS .1. THERMODYNAMIC ANALYSIS OF THE CONDITIONS FOR OBTAINING SOLID-SOLUTIONS, ISOPERIODIC TO INAS AND GASB SUBSTRATES, BY LIQUID-PHASE EPITAXY, Semiconductors, 31(4), 1997, pp. 344-349
ELECTROLUMINESCENCE OF THE UNCONFINED HETEROSTRUCTURE P-GAINASSB P-INAS AT LIQUID-HELIUM TEMPERATURES/
Authors: BAZHENOV NL ZEGRYA GG IVANOVOMSKII VI MIKHAILOVA MP MIKHAILOV MY MOISEEV KD SMIRNOV VA YAKOVLEV YP
Citation: Nl. Bazhenov et al., ELECTROLUMINESCENCE OF THE UNCONFINED HETEROSTRUCTURE P-GAINASSB P-INAS AT LIQUID-HELIUM TEMPERATURES/, Semiconductors, 31(10), 1997, pp. 1046-1048
PHOTODIODES BASED ON INAS1-XSBX SOLID-SOLUTIONS FOR THE SPECTRAL BANDIN THE RANGE 3-5 MU-M
Authors: MIKHAILOVA MP STUS NM SLOBODCHIKOV SV ZOTOVA HV MATVEEV BA TALALAKIN GN
Citation: Mp. Mikhailova et al., PHOTODIODES BASED ON INAS1-XSBX SOLID-SOLUTIONS FOR THE SPECTRAL BANDIN THE RANGE 3-5 MU-M, Semiconductors, 30(9), 1996, pp. 845-848
HIGH CARRIER MOBILITY IN P-TYPE GAINASSB P-INAS HETEROSTRUCTURES/
Authors: VORONINA TI LAGUNOVA TS MIKHAILOVA MP MOISEEV KD YAKOVLEV YP
Citation: Ti. Voronina et al., HIGH CARRIER MOBILITY IN P-TYPE GAINASSB P-INAS HETEROSTRUCTURES/, Semiconductors, 30(6), 1996, pp. 523-526
TUNNEL-INJECTION LASER-BASED ON A SINGLE P-GAINASSB P-INAS TYPE-II BROKEN-GAP HETEROJUNCTION/
Authors: MOISEEV KD MIKHAILOVA MP ERSHOV OG YAKOVLEV YP
Citation: Kd. Moiseev et al., TUNNEL-INJECTION LASER-BASED ON A SINGLE P-GAINASSB P-INAS TYPE-II BROKEN-GAP HETEROJUNCTION/, Semiconductors, 30(3), 1996, pp. 223-225
MAGNETORESISTANCE IN GAINSBAS P-INAS HETE ROSTRUCTURES WITH DIFFERENTLEVEL OF SOLID-SOLUTION ALLOYING BY DONOR ADMIXTURE/
Authors: VORONINA TI LAGUNOVA TS MIKHAILOVA MP MOISEEV KD ROZOV AE YAKOVLEV YP
Citation: Ti. Voronina et al., MAGNETORESISTANCE IN GAINSBAS P-INAS HETE ROSTRUCTURES WITH DIFFERENTLEVEL OF SOLID-SOLUTION ALLOYING BY DONOR ADMIXTURE/, Pis'ma v Zurnal tehniceskoj fiziki, 22(19), 1996, pp. 34-40
UNCOOLED PHOTODIODES BASED ON INASSBP INA S FOR THE SPECTRAL RANGE OF3-5 MU-M/
Authors: MIKHAILOVA MP SLOBODCHIKOV SV STOYANOV ND STUS NM YAKOVLEV YP
Citation: Mp. Mikhailova et al., UNCOOLED PHOTODIODES BASED ON INASSBP INA S FOR THE SPECTRAL RANGE OF3-5 MU-M/, Pis'ma v Zurnal tehniceskoj fiziki, 22(16), 1996, pp. 63-66
INTERFACE ELECTROLUMINESCENCE OF CONFINED CARRIERS IN TYPE-II BROKEN-GAP P-GAINASSB P-INAS SINGLE-HETEROJUNCTION/
Authors: MIKHAILOVA MP ZEGRYA GG MOISEEV KD YAKOVLEV YP
Citation: Mp. Mikhailova et al., INTERFACE ELECTROLUMINESCENCE OF CONFINED CARRIERS IN TYPE-II BROKEN-GAP P-GAINASSB P-INAS SINGLE-HETEROJUNCTION/, Solid-state electronics, 40(1-8), 1996, pp. 673-677
GAINASSB INAS HETEROJUNCTIONS
Authors: MIKHAILOVA MP ANDREEV IA VORONINA TI LAGUNOVA TS MOISEEV KD YAKOVLEV YP
Citation: Mp. Mikhailova et al., GAINASSB INAS HETEROJUNCTIONS, Semiconductors, 29(4), 1995, pp. 353-356
OBSERVATION OF AN ELECTROLUMINESCENCE OF CONFINED CARRIERS AT SINGLE P-GALNASSB P-INAS TYPE-II BROKEN-GAP HETEROJUNCTIONS/
Authors: MIKHAILOVA MP ZEGRYA GG MOISEEV KD TIMCHENKO IN YAKOVLEV YP
Citation: Mp. Mikhailova et al., OBSERVATION OF AN ELECTROLUMINESCENCE OF CONFINED CARRIERS AT SINGLE P-GALNASSB P-INAS TYPE-II BROKEN-GAP HETEROJUNCTIONS/, Semiconductors, 29(4), 1995, pp. 357-361
LONG-WAVE LASER (LAMBDA=3.26-MU-M) WITH S EPARATED SINGLE HETEROTRANSITION-II TYPE OF P-GAINASSB P-INAS IN ACTIVE DOMAIN/
Authors: MOISEEV KD MIKHAILOVA MP ERSHOV OG YAKOVLEV YP
Citation: Kd. Moiseev et al., LONG-WAVE LASER (LAMBDA=3.26-MU-M) WITH S EPARATED SINGLE HETEROTRANSITION-II TYPE OF P-GAINASSB P-INAS IN ACTIVE DOMAIN/, Pis'ma v Zurnal tehniceskoj fiziki, 21(12), 1995, pp. 83-87
TYPE-II HETEROJUNCTIONS IN THE GAINASSB-GASB SYSTEM
Authors: MIKHAILOVA MP TITKOV AN
Citation: Mp. Mikhailova et An. Titkov, TYPE-II HETEROJUNCTIONS IN THE GAINASSB-GASB SYSTEM, Semiconductor science and technology, 9(7), 1994, pp. 1279-1295
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