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Results: 1-25 | 26-50 | 51-58
Results: 1-25/58
PHOTONIC INTEGRATED-CIRCUITS FABRICATED USING ION-IMPLANTATION
Authors: CHARBONNEAU S KOTELES ES POOLE PJ HE JJ AERS GC HAYSOM J BUCHANAN M FENG Y DELAGE A YANG F DAVIES M GOLDBERG RD PIVA PG MITCHELL IV
Citation: S. Charbonneau et al., PHOTONIC INTEGRATED-CIRCUITS FABRICATED USING ION-IMPLANTATION, IEEE journal of selected topics in quantum electronics, 4(4), 1998, pp. 772-793
REDUCED 980 NM LASER FACET ABSORPTION BY BAND-GAP SHIFTED EXTENDED CAVITIES
Authors: PIVA PG GOLDBERG RD MITCHELL IV FAFARD S DION M BUCHANAN M CHARBONNEAU S HILLIER G MINER C
Citation: Pg. Piva et al., REDUCED 980 NM LASER FACET ABSORPTION BY BAND-GAP SHIFTED EXTENDED CAVITIES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1790-1793
LATERAL SELECTIVITY OF ION-INDUCED QUANTUM-WELL INTERMIXING
Authors: HAYSOM JE POOLE PJ FENG Y KOTELES ES HE JJ CHARBONNEAU S GOLDBERG RD MITCHELL IV
Citation: Je. Haysom et al., LATERAL SELECTIVITY OF ION-INDUCED QUANTUM-WELL INTERMIXING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 817-820
ION-IMPLANTATION ENHANCED INTERMIXING OF AL-FREE 980 NM LASER STRUCTURES
Authors: PIVA PG CHARBONNEAU S GOLDBERG RD MITCHELL IV HILLIER G MINER C
Citation: Pg. Piva et al., ION-IMPLANTATION ENHANCED INTERMIXING OF AL-FREE 980 NM LASER STRUCTURES, Applied physics letters, 73(1), 1998, pp. 67-69
PATTERNING THE 2ND-ORDER OPTICAL NONLINEARITY OF ASYMMETRIC QUANTUM-WELLS BY ION-IMPLANTATION ENHANCED INTERMIXING
Authors: JANZ S BUCHANAN M VANDERMEER P WASILEWSKI ZR XU DX PIVA P MITCHELL IV AKANO UG FIORE A
Citation: S. Janz et al., PATTERNING THE 2ND-ORDER OPTICAL NONLINEARITY OF ASYMMETRIC QUANTUM-WELLS BY ION-IMPLANTATION ENHANCED INTERMIXING, Applied physics letters, 72(24), 1998, pp. 3097-3099
A COMPARISON OF SPECTROSCOPIC AND MICROSCOPIC OBSERVATIONS OF ION-INDUCED INTERMIXING IN INGAAS INP QUANTUM-WELLS/
Authors: PIVA PG GOLDBERG RD MITCHELL IV CHEN HJ FEENSTRA RM WEATHERLY GC MCCOMB DW AERS GC POOLE PJ CHARBONNEAU S
Citation: Pg. Piva et al., A COMPARISON OF SPECTROSCOPIC AND MICROSCOPIC OBSERVATIONS OF ION-INDUCED INTERMIXING IN INGAAS INP QUANTUM-WELLS/, Applied physics letters, 72(13), 1998, pp. 1599-1601
CHARACTERIZATION OF CARBON AND CARBON NITRIDE THIN-FILMS USING TIME-OF-FLIGHT SECONDARY-ION MASS-SPECTROMETRY
Authors: HUANG LJ HUNG Y CHANG S MASSOUMI GR LENNARD WN MITCHELL IV
Citation: Lj. Huang et al., CHARACTERIZATION OF CARBON AND CARBON NITRIDE THIN-FILMS USING TIME-OF-FLIGHT SECONDARY-ION MASS-SPECTROMETRY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(4), 1997, pp. 2196-2201
EXTENDED DEFECT FORMATION AND THE FLUX OF INTERSTITIALS IN SI-ION IMPLANTED SILICON
Authors: SIMPSON TW MITCHELL IV
Citation: Tw. Simpson et Iv. Mitchell, EXTENDED DEFECT FORMATION AND THE FLUX OF INTERSTITIALS IN SI-ION IMPLANTED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 94-97
ION-BEAM INTERMIXING OF SEMICONDUCTOR HETEROSTRUCTURES FOR OPTOELECTRONIC APPLICATIONS
Authors: GOLDBERG RD MITCHELL IV POOLE P LABRIE D LAFONTAINE H AERS GC WILLIAMS R DION M CHARBONNEAU S RAMANUJANCHA K WEATHERLY GC
Citation: Rd. Goldberg et al., ION-BEAM INTERMIXING OF SEMICONDUCTOR HETEROSTRUCTURES FOR OPTOELECTRONIC APPLICATIONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 418-422
EFFECTS OF PHOSPHORUS DOPING ON BORON TRANSIENT ENHANCED DIFFUSION INSILICON
Authors: HUANG MB SIMPSON TW MITCHELL IV
Citation: Mb. Huang et al., EFFECTS OF PHOSPHORUS DOPING ON BORON TRANSIENT ENHANCED DIFFUSION INSILICON, Applied physics letters, 70(9), 1997, pp. 1146-1148
REDUCTION OF INGAAS GAAS LASER FACET TEMPERATURES BY BAND-GAP SHIFTEDEXTENDED CAVITIES/
Authors: PIVA PG FAFARD S DION M BUCHANAN M CHARBONNEAU S GOLDBERG RD MITCHELL IV
Citation: Pg. Piva et al., REDUCTION OF INGAAS GAAS LASER FACET TEMPERATURES BY BAND-GAP SHIFTEDEXTENDED CAVITIES/, Applied physics letters, 70(13), 1997, pp. 1662-1664
STRUCTURE OF THE SINX GAAS (110) INTERFACE MODIFIED WITH ULTRATHIN SIAND SULFUR PASSIVATION/
Authors: HUANG LJ LAU WM TANG HT LENNARD WN MITCHELL IV LANDHEER D BARIBEAU JM INGREY S
Citation: Lj. Huang et al., STRUCTURE OF THE SINX GAAS (110) INTERFACE MODIFIED WITH ULTRATHIN SIAND SULFUR PASSIVATION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2895-2900
SPECTRA OF SECONDARY ELECTRONS INDUCED BY CHANNELED AND NONCHANNELED IONS IN SI AND AL
Authors: ALKEMADE PFA FLINN L LENNARD WN MITCHELL IV
Citation: Pfa. Alkemade et al., SPECTRA OF SECONDARY ELECTRONS INDUCED BY CHANNELED AND NONCHANNELED IONS IN SI AND AL, Physical review. A, 53(2), 1996, pp. 886-894
THE FABRICATION OF A BROAD-SPECTRUM LIGHT-EMITTING DIODE USING HIGH-ENERGY ION-IMPLANTATION
Authors: POOLE PJ DAVIES M DION M FENG Y CHARBONNEAU S GOLDBERG RD MITCHELL IV
Citation: Pj. Poole et al., THE FABRICATION OF A BROAD-SPECTRUM LIGHT-EMITTING DIODE USING HIGH-ENERGY ION-IMPLANTATION, IEEE photonics technology letters, 8(9), 1996, pp. 1145-1147
DEMONSTRATION OF AN ION-IMPLANTED, WAVELENGTH-SHIFTED QUANTUM-WELL LASER
Authors: POOLE PJ CHARBONNEAU S DION M AERS GC BUCHANAN M GOLDBERG RD MITCHELL IV
Citation: Pj. Poole et al., DEMONSTRATION OF AN ION-IMPLANTED, WAVELENGTH-SHIFTED QUANTUM-WELL LASER, IEEE photonics technology letters, 8(1), 1996, pp. 16-18
EFFECT OF INTERACTION BETWEEN POINT-DEFECTS AND PREEXISTING DISLOCATION LOOPS ON ANOMALOUS-B DIFFUSION IN SILICON
Authors: PAN S MITCHELL IV
Citation: S. Pan et Iv. Mitchell, EFFECT OF INTERACTION BETWEEN POINT-DEFECTS AND PREEXISTING DISLOCATION LOOPS ON ANOMALOUS-B DIFFUSION IN SILICON, Materials chemistry and physics, 46(2-3), 1996, pp. 252-258
ELECTRICAL ISOLATION OF PIN PHOTODIODE DEVICES BY OXYGEN-ION BOMBARDMENT
Authors: AKANO UG MITCHELL IV SHEPHERD FR MINER CJ MARGITTAI A SVILANS M
Citation: Ug. Akano et al., ELECTRICAL ISOLATION OF PIN PHOTODIODE DEVICES BY OXYGEN-ION BOMBARDMENT, Canadian journal of physics, 74, 1996, pp. 59-63
GETTERING OF CU TO HYDROGEN-INDUCED CAVITIES IN SI
Authors: HALL KC GOLDBERG RD LOWES TD SIMPSON PJ MITCHELL IV WEATHERLY GC
Citation: Kc. Hall et al., GETTERING OF CU TO HYDROGEN-INDUCED CAVITIES IN SI, Canadian journal of physics, 74, 1996, pp. 248-251
QUANTUM-WELL INTERMIXING IN SI1-XGEX SI STRAINED-LAYER HETEROSTRUCTURES USING ION-IMPLANTATION/
Authors: LABRIE D LAFONTAINE H ROWELL N CHARBONNEAU S HOUGHTON D GOLDBERG RD MITCHELL IV
Citation: D. Labrie et al., QUANTUM-WELL INTERMIXING IN SI1-XGEX SI STRAINED-LAYER HETEROSTRUCTURES USING ION-IMPLANTATION/, Applied physics letters, 69(7), 1996, pp. 993-995
POLARIZATION-INSENSITIVE INGAAS INGAASP/INP AMPLIFIERS USING QUANTUM-WELL INTERMIXING/
Authors: HE JJ CHARBONNEAU S POOLE PJ AERS GC FENG Y KOTELES ES GOLDBERG RD MITCHELL IV
Citation: Jj. He et al., POLARIZATION-INSENSITIVE INGAAS INGAASP/INP AMPLIFIERS USING QUANTUM-WELL INTERMIXING/, Applied physics letters, 69(4), 1996, pp. 562-564
EFFECTS OF LOW-TEMPERATURE PREANNEALING ON ION-IMPLANT ASSISTED INTERMIXING OF SI1-XGEX SI QUANTUM-WELLS/
Authors: LABRIE D AERS GC LAFONTAINE H WILLIAMS RL CHARBONNEAU S GOLDBERG RD MITCHELL IV
Citation: D. Labrie et al., EFFECTS OF LOW-TEMPERATURE PREANNEALING ON ION-IMPLANT ASSISTED INTERMIXING OF SI1-XGEX SI QUANTUM-WELLS/, Applied physics letters, 69(25), 1996, pp. 3866-3868
HIGH-RELIABILITY BLUE-SHIFTED INGAASP INP LASERS/
Authors: NOEL JP MELVILLE D JONES T SHEPHERD FR MINER CJ PUETZ N FOX K POOLE PJ FENG Y KOTELES ES CHARBONNEAU S GOLDBERG RD MITCHELL IV
Citation: Jp. Noel et al., HIGH-RELIABILITY BLUE-SHIFTED INGAASP INP LASERS/, Applied physics letters, 69(23), 1996, pp. 3516-3518
BORON REDISTRIBUTION IN A SHALLOW DELTA-DOPED SI STRUCTURE AFTER SOLID-PHASE EPITAXIAL-GROWTH
Authors: HUANG MB MITCHELL IV
Citation: Mb. Huang et Iv. Mitchell, BORON REDISTRIBUTION IN A SHALLOW DELTA-DOPED SI STRUCTURE AFTER SOLID-PHASE EPITAXIAL-GROWTH, Applied physics letters, 69(18), 1996, pp. 2734-2736
NONLINEAR-OPTICAL RESPONSE OF AS-ION IMPLANTED GAAS STUDIED USING TIME-RESOLVED REFLECTIVITY()
Authors: JANZ S AKANO UG MITCHELL IV
Citation: S. Janz et al., NONLINEAR-OPTICAL RESPONSE OF AS-ION IMPLANTED GAAS STUDIED USING TIME-RESOLVED REFLECTIVITY(), Applied physics letters, 68(23), 1996, pp. 3287-3289
EFFECT OF IMPLANTATION DOSE ON PHOTOLUMINESCENCE DECAY TIMES IN INTERMIXED GAAS ALGAAS QUANTUM-WELLS/
Authors: PIVA PG CHARBONNEAU S MITCHELL IV GOLDBERG RD
Citation: Pg. Piva et al., EFFECT OF IMPLANTATION DOSE ON PHOTOLUMINESCENCE DECAY TIMES IN INTERMIXED GAAS ALGAAS QUANTUM-WELLS/, Applied physics letters, 68(16), 1996, pp. 2252-2254
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