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Results: 1-25/28
Authors:
MORGAN DV
ALIYU YH
BUNCE RW
SALEHI A
Citation: Dv. Morgan et al., ANNEALING EFFECTS ON OPTOELECTRONIC PROPERTIES OF SPUTTERED AND THERMALLY EVAPORATED INDIUM-TIN-OXIDE FILMS, Thin solid films, 312(1-2), 1998, pp. 268-272
Authors:
MORGAN DV
SAGURTON M
BARTLETT RJ
Citation: Dv. Morgan et al., SINGLE-PHOTON MULTIPLE IONIZATION OF NEON IN THE K-EDGE REGION, Physical review. A, 55(2), 1997, pp. 1113-1118
Authors:
ALIYU YH
MORGAN DV
THOMAS H
Citation: Yh. Aliyu et al., A LUMINESCENCE MAPPING TECHNIQUE FOR RAPID EVALUATION OF VISIBLE-LIGHT-EMITTING MATERIALS USED IN SEMICONDUCTOR LIGHT-EMITTING-DIODES, Measurement science & technology, 8(4), 1997, pp. 437-440
Authors:
MORGAN DV
SALEHI A
ALIYU YH
BUNCE RW
Citation: Dv. Morgan et al., ELECTROOPTICAL CHARACTERISTICS OF INDIUM TIN OXIDE (ITO) FILMS - EFFECT OF THERMAL ANNEALING, Renewable energy, 7(2), 1996, pp. 205-208
Authors:
LUO JK
WESTWOOD D
THOMS H
MORGAN DV
Citation: Jk. Luo et al., CAPACITANCE BEHAVIOR OF GAAS-MIS STRUCTURES WITH LOW-TEMPERATURE-GROWN GAAS DIELECTRIC, Journal of electronic materials, 25(12), 1996, pp. 1832-1836
Authors:
THOMAS H
LUO JK
MORGAN DV
LIPKA M
KOHN E
Citation: H. Thomas et al., LOW-TEMPERATURE-GROWN GAAS INSULATORS FOR GAAS-FET APPLICATIONS, Semiconductor science and technology, 11(9), 1996, pp. 1333-1338
Authors:
MORGAN SP
MORGAN DV
Citation: Sp. Morgan et Dv. Morgan, AN ION-ASSISTED DEPOSITION SYSTEM FOR USE IN THE FABRICATION OF SUBMICRON DIMENSION DEVICE OHMIC CONTACTS, Thin solid films, 272(1), 1996, pp. 107-111
Authors:
LUO JK
THOMAS H
MORGAN DV
WESTWOOD D
Citation: Jk. Luo et al., TRANSPORT-PROPERTIES OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE AND THE EFFECTS OF ANNEALING, Journal of applied physics, 79(7), 1996, pp. 3622-3629
Authors:
MORGAN DV
BARTLETT RJ
SAGURTON M
Citation: Dv. Morgan et al., SINGLE-PHOTON MULTIPLE IONIZATION OF ARGON IN THE K-EDGE REGION, Physical review. A, 51(4), 1995, pp. 2939-2944
Authors:
LIPKA KM
SPLINGART B
THERON D
LUO JK
SALMER G
THOMAS H
MORGAN DV
KOHN E
Citation: Km. Lipka et al., LT-GAAS WITH HIGH BREAKDOWN STRENGTH AT LOW-TEMPERATURE FOR POWER MISFET APPLICATIONS, Journal of electronic materials, 24(7), 1995, pp. 913-916
Authors:
MORGAN DV
SALEHI A
ALIYU YH
BUNCE RW
DISKETT D
Citation: Dv. Morgan et al., RADIATION-DAMAGE IN INDIUM TIN OXIDE (ITO) LAYERS, Thin solid films, 258(1-2), 1995, pp. 283-285
Authors:
ALIYU YH
MORGAN DV
THOMAS H
BLAND SW
Citation: Yh. Aliyu et al., ALGAINP LEDS USING REACTIVE THERMALLY EVAPORATED TRANSPARENT CONDUCTING INDIUM TIN OXIDE (ITO), Electronics Letters, 31(25), 1995, pp. 2210-2212
Authors:
ALIYU YH
MORGAN DV
THOMAS H
BLAND SW
Citation: Yh. Aliyu et al., ALGAINP LEDS USING REACTIVE THERMALLY EVAPORATED TRANSPARENT CONDUCTING INDIUM-TIN-OXIDE (VOL 31, PG 1691, 1995), Electronics Letters, 31(25), 1995, pp. 2221-2221
Authors:
ALIYU YH
MORGAN DV
THOMAS H
BLAND SW
Citation: Yh. Aliyu et al., ALGAINP LEDS USING REACTIVE THERMALLY EVAPORATED TRANSPARENT CONDUCTING INDIUM TIN OXIDE (ITO), Electronics Letters, 31(19), 1995, pp. 1691-1692
Authors:
CAMACHO A
MORGAN DV
Citation: A. Camacho et Dv. Morgan, REACTIVE ION ETCHING OF GAAS THROUGH WAFER VIA HOLES USING CL-2 AND SICL4 GASES - A COMPREHENSIVE STATISTICAL APPROACH, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(5), 1994, pp. 2933-2940
Authors:
KIELY JH
MORGAN DV
ROWE DM
Citation: Jh. Kiely et al., THE DESIGN AND FABRICATION OF A MINIATURE THERMOELECTRIC GENERATOR USING MOS PROCESSING TECHNIQUES, Measurement science & technology, 5(2), 1994, pp. 182-189
Authors:
KIELY JH
MORGAN DV
ROWE DM
Citation: Jh. Kiely et al., A RELIABILITY STUDY OF A MINIATURE THERMOELECTRIC GENERATOR, Semiconductor science and technology, 9(9), 1994, pp. 1722-1728
Authors:
LUO JK
THOMAS H
MORGAN DV
WESTWOOD D
WILLIAMS RH
Citation: Jk. Luo et al., THE ELECTRICAL BREAKDOWN PROPERTIES OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE, Semiconductor science and technology, 9(12), 1994, pp. 2199-2204
Authors:
MORGAN SP
MORGAN DV
Citation: Sp. Morgan et Dv. Morgan, CHARACTERIZATION OF AUGE-BASED OHMIC CONTACTS TO N-GAAS FABRICATED USING ION-ASSISTED DEPOSITION, Semiconductor science and technology, 9(12), 1994, pp. 2278-2284
Authors:
SCHWENK MH
BERK SI
MORGAN DV
MAESAKA JK
LEHRER M
Citation: Mh. Schwenk et al., SUCRALFATE ON SERUM-LIPIDS AND LIPOPROTEINS IN NORMAL VOLUNTEERS, Journal of clinical pharmacology, 34(7), 1994, pp. 787-792
Authors:
SCHWENK MH
BERK SI
MORGAN DV
MAESAKA JK
LEHRER M
Citation: Mh. Schwenk et al., SUCRALFATE ON SERUM-LIPIDS AND LIPOPROTEINS IN NORMAL VOLUNTEERS (VOL34, PG 787, 1994), Journal of clinical pharmacology, 34(12), 1994, pp. 1246-1246
Authors:
SCHWENK MH
BERK SI
MORGAN DV
MAESAKA JK
LEHRER M
Citation: Mh. Schwenk et al., SUCRALFATE ON SERUM-LIPIDS AND LIPOPROTEINS IN NORMAL VOLUNTEERS (VOL34, PG 787, 1994), Journal of clinical pharmacology, 34(11), 1994, pp. 1132-1132
Authors:
LUO JK
THOMAS R
MORGAN DV
WESTWOOD D
Citation: Jk. Luo et al., THERMAL ANNEALING EFFECT ON LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY-GROWN GAAS - ARSENIC PRECIPITATION AND THE CHANGE OF RESISTIVITY, Applied physics letters, 64(26), 1994, pp. 3614-3616
Authors:
MORGAN DV
ALIYU YH
Citation: Dv. Morgan et Yh. Aliyu, AN IONIC FLOWMETER FOR MEASURING SMALL RATES OF GAS-FLOW, Measurement science & technology, 4(12), 1993, pp. 1479-1483
Authors:
MCCLATCHIE S
THOMAS H
MORGAN DV
Citation: S. Mcclatchie et al., PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF TUNGSTEN AND TUNGSTEN SILICIDE THIN-FILMS, Applied surface science, 73, 1993, pp. 58-63