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Results: 1-8 |
Results: 8
FERROELECTRIC MEMORY CIRCUIT TECHNOLOGY AND THE APPLICATION TO CONTACTLESS IC CARD
Authors: ASARI K HIRANO H HONDA T SUMI T TAKEO M MORIWAKI N NAKANE G NAKAKUMA T CHAYA S MUKUNOKI T JUDAI Y AZUMA M SHIMADA Y OTSUKI T
Citation: K. Asari et al., FERROELECTRIC MEMORY CIRCUIT TECHNOLOGY AND THE APPLICATION TO CONTACTLESS IC CARD, IEICE transactions on electronics, E81C(4), 1998, pp. 488-496
RETENTION CHARACTERISTICS OF A FERROELECTRIC MEMORY-BASED ON SRBI2(TA,NB)(2)O-9
Authors: SHIMADA Y AZUMA M NAKAO K CHAYA S MORIWAKI N OTSUKI T
Citation: Y. Shimada et al., RETENTION CHARACTERISTICS OF A FERROELECTRIC MEMORY-BASED ON SRBI2(TA,NB)(2)O-9, JPN J A P 1, 36(9B), 1997, pp. 5912-5916
NONVOLATILE MEMORIES USING SRBI2TA2O9 FERROELECTRICS
Authors: JONES RE CHU PY JIANG B MELNICK BM TAYLOR DJ WHITE BE ZAFAR S PRICE D ZURCHER P GILLESPIE SJ OTSUKI T SUMI T JUDAI Y UEMOTO Y FUJII E HAYASHI S MORIWAKI N AZUMA M SHIMADA Y ARITA K HIRANO H NAKANE J NAKAKUM T KANO G
Citation: Re. Jones et al., NONVOLATILE MEMORIES USING SRBI2TA2O9 FERROELECTRICS, Integrated ferroelectrics, 17(1-4), 1997, pp. 21-30
EMPIRICAL RELIABILITY MODELS OF RETENTION FAILURES IN A FERROELECTRICMEMORY DEVICE USING SRBI2(TA,NB)(2)O-9
Authors: SHIMADA Y AZUMA M NAKAO K CHAYA S MORIWAKI N OTSUKI T
Citation: Y. Shimada et al., EMPIRICAL RELIABILITY MODELS OF RETENTION FAILURES IN A FERROELECTRICMEMORY DEVICE USING SRBI2(TA,NB)(2)O-9, Integrated ferroelectrics, 17(1-4), 1997, pp. 45-55
2-V 100-NS 1T/1C NONVOLATILE FERROELECTRIC MEMORY ARCHITECTURE WITH BITLINE-DRIVEN READ SCHEME AND NONRELAXATION REFERENCE CELL/
Authors: HIRANO H HONDA T MORIWAKI N NAKAKUMA T INOUE A NAKANE G CHAYA S SUMI T
Citation: H. Hirano et al., 2-V 100-NS 1T/1C NONVOLATILE FERROELECTRIC MEMORY ARCHITECTURE WITH BITLINE-DRIVEN READ SCHEME AND NONRELAXATION REFERENCE CELL/, IEEE journal of solid-state circuits, 32(5), 1997, pp. 649-654
REACTION OF CARBON-DIOXIDE WITH TRA-T-BUTYLPHTHALOCYANINATO-ALUMINUM(III)-ETHYLATE OR TRA-T-BUTYLPHTHALOCYANINATO-ALUMINUM(III)-ETHOXIDE
Authors: KASUGA K MORIWAKI N HANDA M
Citation: K. Kasuga et al., REACTION OF CARBON-DIOXIDE WITH TRA-T-BUTYLPHTHALOCYANINATO-ALUMINUM(III)-ETHYLATE OR TRA-T-BUTYLPHTHALOCYANINATO-ALUMINUM(III)-ETHOXIDE, Inorganica Chimica Acta, 244(1), 1996, pp. 137-139
256KB FERROELECTRIC NONVOLATILE MEMORY TECHNOLOGY FOR 1T 1C CELL WITH100NS READ/WRITE TIME AT 3V/
Authors: SUMI T MORIWAKI N NAKANE G NAKAKUMA T JUDAI Y UEMOTO Y NAGANO Y HAYASHI S AZUMA M OTSUKI T KANO G CUCHIARO JD SCOTT MC MCMILLAN LD DEARAUJO CAP
Citation: T. Sumi et al., 256KB FERROELECTRIC NONVOLATILE MEMORY TECHNOLOGY FOR 1T 1C CELL WITH100NS READ/WRITE TIME AT 3V/, Integrated ferroelectrics, 6(1-4), 1995, pp. 1-13
INTEGRATION TECHNOLOGY OF FERROELECTRICS AND THE PERFORMANCE OF THE INTEGRATED FERROELECTRICS
Authors: SHIMADA Y NAGANO Y FUJII E AZUMA M UEMOTO Y SUMI T JUDAI Y HAYASHI S MORIWAKI N NAKANE J OTSUKI T DEARAUJO CAP MCMILLAN LD
Citation: Y. Shimada et al., INTEGRATION TECHNOLOGY OF FERROELECTRICS AND THE PERFORMANCE OF THE INTEGRATED FERROELECTRICS, Integrated ferroelectrics, 11(1-4), 1995, pp. 229-245
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