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Results: 1-8 |
Results: 8
WHY DOES THE SINGLE NEURON ACTIVITY CHANGE FROM TRIAL TO TRIAL DURINGSENSORY-MOTOR TASK
Authors: AKAMATSU M TERAO A HASBROUCQ T MOURET I SEAL J
Citation: M. Akamatsu et al., WHY DOES THE SINGLE NEURON ACTIVITY CHANGE FROM TRIAL TO TRIAL DURINGSENSORY-MOTOR TASK, Methods of information in medicine, 36(4-5), 1997, pp. 322-325
MEASUREMENT OF A CROSS-SECTION FOR SINGLE-EVENT GATE RUPTURE IN POWERMOSFETS
Authors: MOURET I CALVEL P ALLENSPACH M TITUS JL WHEATLEY CF LABEL KA CALVET MC SCHRIMPF RD GALLOWAY KF
Citation: I. Mouret et al., MEASUREMENT OF A CROSS-SECTION FOR SINGLE-EVENT GATE RUPTURE IN POWERMOSFETS, IEEE electron device letters, 17(4), 1996, pp. 163-165
EXPERIMENTAL-EVIDENCE OF THE TEMPERATURE AND ANGULAR-DEPENDENCE IN SEGR
Authors: MOURET I CALVET MC CALVEL P TASTET P ALLENSPACH M LABEL KA TITUS JL WHEATLEY CF SCHRIMPF RD GALLOWAY KF
Citation: I. Mouret et al., EXPERIMENTAL-EVIDENCE OF THE TEMPERATURE AND ANGULAR-DEPENDENCE IN SEGR, IEEE transactions on nuclear science, 43(3), 1996, pp. 936-943
FINGER PAIRINGS IN 2-CHOICE REACTION-TIME TASKS - DOES THE BETWEEN-HANDS ADVANTAGE REFLECT RESPONSE PREPARATION
Authors: HASBROUCQ T MOURET I SEAL J AKAMATSU M
Citation: T. Hasbroucq et al., FINGER PAIRINGS IN 2-CHOICE REACTION-TIME TASKS - DOES THE BETWEEN-HANDS ADVANTAGE REFLECT RESPONSE PREPARATION, Journal of motor behavior, 27(3), 1995, pp. 251-262
SINGLE-EVENT GATE-RUPTURE IN POWER MOSFETS - PREDICTION OF BREAKDOWN BIASES AND EVALUATION OF OXIDE THICKNESS DEPENDENCE
Authors: ALLENSPACH M MOURET I TITUS JL WHEATLEY CF PEASE RL BREWS JR SCHRIMPF RD GALLOWAY KF
Citation: M. Allenspach et al., SINGLE-EVENT GATE-RUPTURE IN POWER MOSFETS - PREDICTION OF BREAKDOWN BIASES AND EVALUATION OF OXIDE THICKNESS DEPENDENCE, IEEE transactions on nuclear science, 42(6), 1995, pp. 1922-1927
IMPACT OF OXIDE THICKNESS ON SEGR FAILURE IN VERTICAL POWERMOSFETS - DEVELOPMENT OF A SEMIEMPIRICAL EXPRESSION
Authors: TITUS JL WHEATLEY CF BURTON DI MOURET I ALLENSPACH M BREWS J SCHRIMPF R GALLOWAY K PEASE RL
Citation: Jl. Titus et al., IMPACT OF OXIDE THICKNESS ON SEGR FAILURE IN VERTICAL POWERMOSFETS - DEVELOPMENT OF A SEMIEMPIRICAL EXPRESSION, IEEE transactions on nuclear science, 42(6), 1995, pp. 1928-1934
EVALUATION OF SEGR THRESHOLD IN POWER MOSFETS
Authors: ALLENSPACH M BREWS JR MOURET I SCHRIMPF RD GALLOWAY KF
Citation: M. Allenspach et al., EVALUATION OF SEGR THRESHOLD IN POWER MOSFETS, IEEE transactions on nuclear science, 41(6), 1994, pp. 2160-2166
TEMPERATURE AND ANGULAR-DEPENDENCE OF SUBSTRATE RESPONSE IN SEGR
Authors: MOURET I ALLENSPACH M SCHRIMPF RD BREWS JR GALLOWAY KF CALVEL P
Citation: I. Mouret et al., TEMPERATURE AND ANGULAR-DEPENDENCE OF SUBSTRATE RESPONSE IN SEGR, IEEE transactions on nuclear science, 41(6), 1994, pp. 2216-2221
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