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Results: 1-25 | 26-31
Results: 1-25/31
INGAAS GAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH ALAS SELECTIVE OXIDE LAYERS/
Authors: HATORI N MUKAIHARA T OHNOKI N MIZUTANI A ABE M MATSUTANI A KOYAMA F IGA K
Citation: N. Hatori et al., INGAAS GAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH ALAS SELECTIVE OXIDE LAYERS/, Electronics & communications in Japan. Part 2, Electronics, 81(1), 1998, pp. 13-20
1.3-MU-M GAINASP LASERS INTEGRATED WITH BUTT-COUPLED WAVE-GUIDE AND HIGH REFLECTIVE SEMICONDUCTOR AIR BRAGG REFLECTOR (SABAR)/
Authors: MUKAIHARA T YAMANAKA N IWAI N ISHIKAWA T KASUKAWA A
Citation: T. Mukaihara et al., 1.3-MU-M GAINASP LASERS INTEGRATED WITH BUTT-COUPLED WAVE-GUIDE AND HIGH REFLECTIVE SEMICONDUCTOR AIR BRAGG REFLECTOR (SABAR)/, Electronics Letters, 34(9), 1998, pp. 882-884
LOW-THRESHOLD 1.3-MU-M INASP N-TYPE MODULATION-DOPED MQW LASERS GROWNBY GAS-SOURCE MOLECULAR-BEAM EPITAXY
Authors: SHIMIZU H KUMADA K YAMANAKA N IWAI N MUKAIHARA T KASUKAWA A
Citation: H. Shimizu et al., LOW-THRESHOLD 1.3-MU-M INASP N-TYPE MODULATION-DOPED MQW LASERS GROWNBY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Electronics Letters, 34(9), 1998, pp. 888-890
LOW-THRESHOLD CURRENT 1.3-MU-M INASP QW ACIS LASERS
Authors: IWAI N MUKAIHARA T SHIMIZU H YAMANAKA N KUMADA K KASUKAWA A
Citation: N. Iwai et al., LOW-THRESHOLD CURRENT 1.3-MU-M INASP QW ACIS LASERS, Electronics Letters, 34(9), 1998, pp. 890-891
SUBMILLIAMPERE THRESHOLD CURRENT IN 1.3-MU-M INASP N-TYPE MODULATION-DOPED MQW LASERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
Authors: SHIMIZU H KUMADA K YAMANAKA N IWAI N MUKAIHARA T KASUKAWA A
Citation: H. Shimizu et al., SUBMILLIAMPERE THRESHOLD CURRENT IN 1.3-MU-M INASP N-TYPE MODULATION-DOPED MQW LASERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Electronics Letters, 34(16), 1998, pp. 1591-1593
1.3-MU-M GAINASP SL-QW AL-OXIDE CONFINED INNER STRIPE LASERS ON P-INPSUBSTRATE WITH ALINAS-OXIDE CONFINEMENT LAYER
Authors: IWAI N MUKAIHARA T ITOH M YAMANAKA N ARAKAWA S SHIMIZU H KASUKAWA A
Citation: N. Iwai et al., 1.3-MU-M GAINASP SL-QW AL-OXIDE CONFINED INNER STRIPE LASERS ON P-INPSUBSTRATE WITH ALINAS-OXIDE CONFINEMENT LAYER, Electronics Letters, 34(14), 1998, pp. 1427-1428
PROPOSAL AND DEMONSTRATION OF ALAS-OXIDE CONFINEMENT STRUCTURE FOR INP-BASED LONG-WAVELENGTH LASERS
Authors: OHNOKI N MUKAIHARA T HATORI N MIZUTANI A KOYAMA F IGA K
Citation: N. Ohnoki et al., PROPOSAL AND DEMONSTRATION OF ALAS-OXIDE CONFINEMENT STRUCTURE FOR INP-BASED LONG-WAVELENGTH LASERS, JPN J A P 1, 36(1A), 1997, pp. 148-149
STRUCTURAL DEPENDENCE OF 1.3-MU-M NARROW-BEAM LASERS FABRICATED BY SELECTIVE MOCVD GROWTH
Authors: KASUKAWA A NISHIKATA K YAMANAKA N ARAKAWA S IWAI N MUKAIHARA T MATSUDA T
Citation: A. Kasukawa et al., STRUCTURAL DEPENDENCE OF 1.3-MU-M NARROW-BEAM LASERS FABRICATED BY SELECTIVE MOCVD GROWTH, IEEE journal of selected topics in quantum electronics, 3(6), 1997, pp. 1413-1420
LASING CHARACTERISTICS OF GAAS(311)A SUBSTRATE BASED INGAAS-GAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS
Authors: TAKAHASHI M EGAMI N MUKAIHARA T KOYAMA F IGA K
Citation: M. Takahashi et al., LASING CHARACTERISTICS OF GAAS(311)A SUBSTRATE BASED INGAAS-GAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS, IEEE journal of selected topics in quantum electronics, 3(2), 1997, pp. 372-378
DELETION FORMATION BETWEEN THE 2 SALMONELLA-TYPHIMURIUM FLAGELLIN GENES ENCODED ON THE MINI F PLASMID - ESCHERICHIA-COLI SSB ALLELES ENHANCE DELETION RATES AND CHANGE HOT-SPOT PREFERENCE FOR DELETION END-POINTS
Authors: MUKAIHARA T ENOMOTO M
Citation: T. Mukaihara et M. Enomoto, DELETION FORMATION BETWEEN THE 2 SALMONELLA-TYPHIMURIUM FLAGELLIN GENES ENCODED ON THE MINI F PLASMID - ESCHERICHIA-COLI SSB ALLELES ENHANCE DELETION RATES AND CHANGE HOT-SPOT PREFERENCE FOR DELETION END-POINTS, Genetics, 145(3), 1997, pp. 563-572
DESIGN AND FABRICATION OF INGAAS GAAS QUANTUM WIRES FOR VERTICAL-CAVITY SURFACE-EMITTING LASERS/
Authors: HATORI N MUKAIHARA T HAYASHI Y OHNOKI N KOYAMA F IGA K
Citation: N. Hatori et al., DESIGN AND FABRICATION OF INGAAS GAAS QUANTUM WIRES FOR VERTICAL-CAVITY SURFACE-EMITTING LASERS/, JPN J A P 1, 35(3), 1996, pp. 1777-1778
A NOVEL SHORT-CAVITY LASER WITH DEEP-GRATING DISTRIBUTED BRAGG REFLECTORS
Authors: BABA T HAMASAKI M WATANABE N KAEWPLUNG P MATSUTANI A MUKAIHARA T KOYAMA F IGA K
Citation: T. Baba et al., A NOVEL SHORT-CAVITY LASER WITH DEEP-GRATING DISTRIBUTED BRAGG REFLECTORS, JPN J A P 1, 35(2B), 1996, pp. 1390-1394
GROWTH AND CHARACTERIZATION OF VERTICAL-CAVITY SURFACE-EMITTING LASERS GROWN ON (311)A-ORIENTED GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY
Authors: TAKAHASHI M VACCARO PO WATANABE T MUKAIHARA T KOYAMA F IGA K
Citation: M. Takahashi et al., GROWTH AND CHARACTERIZATION OF VERTICAL-CAVITY SURFACE-EMITTING LASERS GROWN ON (311)A-ORIENTED GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY, JPN J A P 1, 35(12A), 1996, pp. 6102-6107
CHARACTERIZATION OF RESIDUAL-STRESS IN ACTIVE-REGION DUE TO ALAS NATIVE-OXIDE OF VERTICAL-CAVITY SURFACE-EMITTING LASERS
Authors: HATORI N MUKAIHARA T ABE M OHNOKI N MIZUTANI A MATSUTANI A KOYAMA F IGA K
Citation: N. Hatori et al., CHARACTERIZATION OF RESIDUAL-STRESS IN ACTIVE-REGION DUE TO ALAS NATIVE-OXIDE OF VERTICAL-CAVITY SURFACE-EMITTING LASERS, JPN J A P 1, 35(12A), 1996, pp. 6108-6109
AN INGAAS-GAAS VERTICAL-CAVITY SURFACE-EMITTING LASER GROWN ON GAAS(311)A SUBSTRATE HAVING LOW-THRESHOLD AND STABLE POLARIZATION
Authors: TAKAHASHI M VACCARO P FUJITA K WATANABE T MUKAIHARA T KOYAMA F IGA K
Citation: M. Takahashi et al., AN INGAAS-GAAS VERTICAL-CAVITY SURFACE-EMITTING LASER GROWN ON GAAS(311)A SUBSTRATE HAVING LOW-THRESHOLD AND STABLE POLARIZATION, IEEE photonics technology letters, 8(6), 1996, pp. 737-739
FABRICATION PROCESSES FOR LOW-THRESHOLD INGAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS
Authors: MUKAIHARA T HATORI N OHNOKI N MIZUTANI A ABE M MATSUTANI A KOYAMA F IGA K
Citation: T. Mukaihara et al., FABRICATION PROCESSES FOR LOW-THRESHOLD INGAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS, Physica. B, Condensed matter, 227(1-4), 1996, pp. 400-403
MINIATURE SEMICONDUCTOR OPTICAL POWER SPLITTERS WITH SUBMICROMETER WIDE-APERTURE
Authors: SUZUKI K KOYAMA F MATSUTANI A KATO J MUKAIHARA T IGA K
Citation: K. Suzuki et al., MINIATURE SEMICONDUCTOR OPTICAL POWER SPLITTERS WITH SUBMICROMETER WIDE-APERTURE, Electronics Letters, 32(7), 1996, pp. 654-655
GAINAS GAAS MICRO-ARC RING SEMICONDUCTOR-LASER/
Authors: MITSUGI S KOYAMA F KATO J MATSUTANI A MUKAIHARA T IGA K
Citation: S. Mitsugi et al., GAINAS GAAS MICRO-ARC RING SEMICONDUCTOR-LASER/, JPN J A P 1, 34(2B), 1995, pp. 1265-1269
POLARIZATION CONTROL OF VERTICAL-CAVITY SURFACE-EMITTING LASERS USINGA BIREFRINGENT METAL DIELECTRIC POLARIZER LOADED ON TOP DISTRIBUTED-BRAGG-REFLECTOR/
Authors: MUKAIHARA T OHNOKI N HAYASHI Y HATORI N KOYAMA F IGA K
Citation: T. Mukaihara et al., POLARIZATION CONTROL OF VERTICAL-CAVITY SURFACE-EMITTING LASERS USINGA BIREFRINGENT METAL DIELECTRIC POLARIZER LOADED ON TOP DISTRIBUTED-BRAGG-REFLECTOR/, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 667-673
LASING CHARACTERISTICS OF LOW-THRESHOLD OXIDE CONFINEMENT INGAAS-GAALAS VERTICAL-CAVITY SURFACE-EMITTING LASERS
Authors: HAYASHI Y MUKAIHARA T HATORI N OHNOKI N MATSUTANI A KOYAMA F IGA K
Citation: Y. Hayashi et al., LASING CHARACTERISTICS OF LOW-THRESHOLD OXIDE CONFINEMENT INGAAS-GAALAS VERTICAL-CAVITY SURFACE-EMITTING LASERS, IEEE photonics technology letters, 7(11), 1995, pp. 1234-1236
EXCESS INTENSITY NOISE ORIGINATED FROM POLARIZATION FLUCTUATION IN VERTICAL-CAVITY SURFACE-EMITTING LASERS
Authors: MUKAIHARA T OHNOKI N HAYASHI Y HATORI N KOYAMA F IGA K
Citation: T. Mukaihara et al., EXCESS INTENSITY NOISE ORIGINATED FROM POLARIZATION FLUCTUATION IN VERTICAL-CAVITY SURFACE-EMITTING LASERS, IEEE photonics technology letters, 7(10), 1995, pp. 1113-1115
WAVELENGTH CONTROL OF VERTICAL-CAVITY SURFACE-EMITTING LASERS BY USING NONPLANAR MOCVD
Authors: KOYAMA F MUKAIHARA T HAYASHI Y OHNOKI N HATORI N IGA K
Citation: F. Koyama et al., WAVELENGTH CONTROL OF VERTICAL-CAVITY SURFACE-EMITTING LASERS BY USING NONPLANAR MOCVD, IEEE photonics technology letters, 7(1), 1995, pp. 10-12
IMPROVEMENT OF CURRENT DENSITY-VOLTAGE CHARACTERISTICS OF GAAS ALAS DISTRIBUTED BRAGG REFLECTORS IN INGAAS/ALGAAS SURFACE-EMITTING LASERS/
Authors: LIM KY KIM JY HAYASHI Y MUKAIHARA T OHNOKI N KOYAMA F IGA K
Citation: Ky. Lim et al., IMPROVEMENT OF CURRENT DENSITY-VOLTAGE CHARACTERISTICS OF GAAS ALAS DISTRIBUTED BRAGG REFLECTORS IN INGAAS/ALGAAS SURFACE-EMITTING LASERS/, Journal of the Korean Physical Society, 28(4), 1995, pp. 495-498
LOW-THRESHOLD MESA-ETCHED VERTICAL-CAVITY INGAAS GAAS SURFACE-EMITTING LASERS GROWN BY MOCVD/
Authors: MUKAIHARA T HAYASHI Y HATORI N OHNOKI N MATSUTANI A KOYAMA F IGA K
Citation: T. Mukaihara et al., LOW-THRESHOLD MESA-ETCHED VERTICAL-CAVITY INGAAS GAAS SURFACE-EMITTING LASERS GROWN BY MOCVD/, Electronics Letters, 31(8), 1995, pp. 647-648
RECORD LOW-THRESHOLD INDEX-GUIDED INGAAS GAALAS VERTICAL-CAVITY SURFACE-EMITTING LASER WITH A NATIVE-OXIDE CONFINEMENT STRUCTURE/
Authors: HAYASHI Y MUKAIHARA T HATORI N OHNOKI N MATSUTANI A KOYAMA F IGA K
Citation: Y. Hayashi et al., RECORD LOW-THRESHOLD INDEX-GUIDED INGAAS GAALAS VERTICAL-CAVITY SURFACE-EMITTING LASER WITH A NATIVE-OXIDE CONFINEMENT STRUCTURE/, Electronics Letters, 31(7), 1995, pp. 560-562
Risultati: 1-25 | 26-31