Authors:
GUTMANN RJ
CHOW TP
LAKSHMINARAYANAN S
PRICE DT
STEIGERWALD JM
YOU L
MURARKA SP
Citation: Rj. Gutmann et al., INTEGRATION OF COPPER MULTILEVEL INTERCONNECTS WITH OXIDE AND POLYMERINTERLEVEL DIELECTRICS, Thin solid films, 270(1-2), 1995, pp. 472-479
Authors:
GUTMANN RJ
STEIGERWALD JM
YOU L
PRICE DT
NEIRYNCK J
DUQUETTE DJ
MURARKA SP
Citation: Rj. Gutmann et al., CHEMICAL-MECHANICAL POLISHING OF COPPER WITH OXIDE AND POLYMER INTERLEVEL DIELECTRICS, Thin solid films, 270(1-2), 1995, pp. 596-600
Citation: Wd. Li et al., THE EFFECT OF THE POLISHING PAD TREATMENTS ON THE CHEMICAL-MECHANICALPOLISHING OF SIO2-FILMS, Thin solid films, 270(1-2), 1995, pp. 601-606
Citation: Jk. Cramer et Sp. Murarka, STRESS-TEMPERATURE BEHAVIOR OF ELECTRON-CYCLOTRON-RESONANCE OXIDES AND THEIR CORRELATION TO HYDROGENOUS SPECIES CONCENTRATION, Journal of applied physics, 77(7), 1995, pp. 3048-3055
Authors:
STEIGERWALD JM
DUQUETTE DJ
MURARKA SP
GUTMANN RJ
Citation: Jm. Steigerwald et al., ELECTROCHEMICAL POTENTIAL MEASUREMENTS DURING THE CHEMICAL-MECHANICALPOLISHING OF COPPER THIN-FILMS, Journal of the Electrochemical Society, 142(7), 1995, pp. 2379-2385
Authors:
LAKSHMINARAYANAN S
STEIGERWALD J
PRICE DT
BOURGEOIS M
CHOW TP
GUTMANN RJ
MURARKA SP
Citation: S. Lakshminarayanan et al., CONTACT AND VIA STRUCTURES WITH COPPER INTERCONNECTS FABRICATED USINGDUAL DAMASCENE TECHNOLOGY, IEEE electron device letters, 15(8), 1994, pp. 307-309
Authors:
DING PJ
TALEVI R
LANFORD WA
HYMES S
MURARKA SP
Citation: Pj. Ding et al., USE OF A RASTERED MICROBEAM TO STUDY LATERAL DIFFUSION OF INTEREST TOMICROELECTRONICS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 167-170
Authors:
DING PJ
WANG W
LANFORD WA
HYMES S
MURARKA SP
Citation: Pj. Ding et al., INVESTIGATION OF THE MECHANISM RESPONSIBLE FOR THE CORROSION-RESISTANCE OF B IMPLANTED COPPER, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 260-263
Authors:
ARCOT B
MURARKA SP
CLEVENGER LA
HONG QZ
ZIEGLER W
HARPER JME
Citation: B. Arcot et al., INTERMETALLIC FORMATION IN COPPER MAGNESIUM THIN-FILMS - KINETICS, NUCLEATION AND GROWTH, AND EFFECT OF INTERFACIAL OXYGEN/, Journal of applied physics, 76(9), 1994, pp. 5161-5170
Citation: Pj. Ding et al., EFFECTS OF THE ADDITION OF SMALL AMOUNTS OF AL TO COPPER - CORROSION,RESISTIVITY, ADHESION, MORPHOLOGY, AND DIFFUSION, Journal of applied physics, 75(7), 1994, pp. 3627-3631
Authors:
STEIGERWALD JM
MURARKA SP
GUTMANN RJ
DUQUETTE DJ
Citation: Jm. Steigerwald et al., EFFECT OF COPPER IONS IN THE SLURRY ON THE CHEMICAL-MECHANICAL POLISHRATE OF TITANIUM, Journal of the Electrochemical Society, 141(12), 1994, pp. 3512-3516
Authors:
STEIGERWALD JM
ZIRPOLI R
MURARKA SP
PRICE D
GUTMANN RJ
Citation: Jm. Steigerwald et al., PATTERN GEOMETRY-EFFECTS IN THE CHEMICAL-MECHANICAL POLISHING OF INLAID COPPER STRUCTURES, Journal of the Electrochemical Society, 141(10), 1994, pp. 2842-2848
Authors:
DING PJ
WANG W
LANFORD WA
HYMES S
MURARKA SP
Citation: Pj. Ding et al., THERMAL ANNEALING OF BURIED AL BARRIER LAYERS TO PASSIVATE THE SURFACE OF COPPER-FILMS, Applied physics letters, 65(14), 1994, pp. 1778-1780
Citation: Ms. Farooq et Sp. Murarka, SCHOTTKY DEVICE BEHAVIOR OF N-SI PD2SI/AL AND N-SI/COSI2/AL CONTACTS WITH AND WITHOUT A TA2N DIFFUSION BARRIER/, Materials science & engineering. B, Solid-state materials for advanced technology, 19(3), 1993, pp. 270-275
Citation: Sp. Murarka et al., INLAID COPPER MULTILEVEL INTERCONNECTIONS USING PLANARIZATION BY CHEMICAL-MECHANICAL POLISHING, MRS bulletin, 18(6), 1993, pp. 46-51