Citation: Yt. Ma et al., Analytical charge-control and I-V model for submicrometer and deep-submicrometer MOSFETs fully comprising quantum mechanical effects, IEEE COMP A, 20(4), 2001, pp. 495-502
Authors:
Pollock, GS
Vernon, E
Forbes, ME
Yan, Q
Ma, YT
Hsieh, T
Robichon, R
Frost, DO
Johnson, JE
Citation: Gs. Pollock et al., Effects of early visual experience and diurnal rhythms on BDNF mRNA and protein levels in the visual system, hippocampus, and cerebellum, J NEUROSC, 21(11), 2001, pp. 3923-3931
Authors:
Frost, DO
Ma, YT
Hsieh, T
Forbes, ME
Johnson, JE
Citation: Do. Frost et al., Developmental changes in BDNF protein levels in the hamster retina and superior colliculus, J NEUROBIOL, 49(3), 2001, pp. 173-187
Citation: Yt. Ma et al., Characterization and modelling of carrier distribution and gate capacitance in MOS structure inversion layer, INT J ELECT, 88(4), 2001, pp. 395-409
Citation: Yt. Ma et Ka. Sluka, Reduction in inflammation-induced sensitization of dorsal horn neurons by transcutaneous electrical nerve stimulation in anesthetized rats, EXP BRAIN R, 137(1), 2001, pp. 94-102
Citation: J. Wang et al., Modified Airy function method for modeling of direct tunneling current in metal-oxide-semiconductor structures, APPL PHYS L, 79(12), 2001, pp. 1831-1833
Citation: Yt. Ma et al., Scale transformation method in self-consistent solution of Schrodinger andPoisson equations, JPN J A P 1, 39(8), 2000, pp. 4759-4760
Citation: Yt. Ma et L. Wanhammar, A hardware efficient control of memory addressing for high-performance FFTprocessors, IEEE SIGNAL, 48(3), 2000, pp. 917-921
Citation: Yt. Ma et al., A new charge model including quantum mechanical effects in MOS structure inversion layer, SOL ST ELEC, 44(9), 2000, pp. 1697-1702
Citation: Yt. Ma et al., Characterization and modeling of threshold voltage shift due to quantum mechanical effects in pMOSFET, SOL ST ELEC, 44(7), 2000, pp. 1335-1339
Citation: Yt. Ma et al., Thorough analysis of quantum mechanical effects on MOS structure characteristics in threshold region, MICROELEC J, 31(11-12), 2000, pp. 913-921
Citation: Yt. Ma et al., Validity and applicability of triangular potential well approximation in modeling of MOS structure inversion and accumulation layer, IEEE DEVICE, 47(9), 2000, pp. 1764-1767
Citation: Yt. Ma et al., Simplified method to investigate quantum mechanical effects in MOS structure inversion layer, IEEE DEVICE, 47(6), 2000, pp. 1303-1305