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Results:
1-19
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Results: 19
Authors:
Ma, YT
Liu, LT
Tian, LL
Yu, ZP
Li, ZJ
Citation: Yt. Ma et al., Analytical charge-control and I-V model for submicrometer and deep-submicrometer MOSFETs fully comprising quantum mechanical effects, IEEE COMP A, 20(4), 2001, pp. 495-502
Authors:
Pollock, GS
Vernon, E
Forbes, ME
Yan, Q
Ma, YT
Hsieh, T
Robichon, R
Frost, DO
Johnson, JE
Citation: Gs. Pollock et al., Effects of early visual experience and diurnal rhythms on BDNF mRNA and protein levels in the visual system, hippocampus, and cerebellum, J NEUROSC, 21(11), 2001, pp. 3923-3931
Authors:
Ma, YT
Li, ZJ
Liu, LT
Yu, ZP
Citation: Yt. Ma et al., Comprehensive analytical physical model of quantized inversion layer in MOS structure, SOL ST ELEC, 45(2), 2001, pp. 267-273
Authors:
Frost, DO
Ma, YT
Hsieh, T
Forbes, ME
Johnson, JE
Citation: Do. Frost et al., Developmental changes in BDNF protein levels in the hamster retina and superior colliculus, J NEUROBIOL, 49(3), 2001, pp. 173-187
Authors:
Ma, YT
Liu, LT
Yu, ZP
Li, ZJ
Citation: Yt. Ma et al., Characterization and modelling of carrier distribution and gate capacitance in MOS structure inversion layer, INT J ELECT, 88(4), 2001, pp. 395-409
Authors:
Ma, YT
Sluka, KA
Citation: Yt. Ma et Ka. Sluka, Reduction in inflammation-induced sensitization of dorsal horn neurons by transcutaneous electrical nerve stimulation in anesthetized rats, EXP BRAIN R, 137(1), 2001, pp. 94-102
Authors:
Wang, J
Ma, YT
Tian, LL
Li, ZJ
Citation: J. Wang et al., Modified Airy function method for modeling of direct tunneling current in metal-oxide-semiconductor structures, APPL PHYS L, 79(12), 2001, pp. 1831-1833
Authors:
Ma, YT
Liu, LT
Yu, ZP
Li, ZJ
Citation: Yt. Ma et al., Scale transformation method in self-consistent solution of Schrodinger andPoisson equations, JPN J A P 1, 39(8), 2000, pp. 4759-4760
Authors:
Ma, YT
Wanhammar, L
Citation: Yt. Ma et L. Wanhammar, A hardware efficient control of memory addressing for high-performance FFTprocessors, IEEE SIGNAL, 48(3), 2000, pp. 917-921
Authors:
Ma, YT
Liu, LT
Deng, W
Tian, LL
Li, ZJ
Yu, ZP
Citation: Yt. Ma et al., A new charge model including quantum mechanical effects in MOS structure inversion layer, SOL ST ELEC, 44(9), 2000, pp. 1697-1702
Authors:
Ma, YT
Liu, LT
Yu, ZP
Li, ZJ
Citation: Yt. Ma et al., Characterization and modeling of threshold voltage shift due to quantum mechanical effects in pMOSFET, SOL ST ELEC, 44(7), 2000, pp. 1335-1339
Authors:
Ma, YT
Li, ZJ
Liu, LT
Tian, LL
Yu, ZP
Citation: Yt. Ma et al., Effective density-of-states approach to QM correction in MOS structures, SOL ST ELEC, 44(3), 2000, pp. 401-407
Authors:
Ma, YT
Liu, LT
Yu, ZP
Li, ZJ
Citation: Yt. Ma et al., On the degeneracy of quantized inversion layer in MOS structures, SOL ST ELEC, 44(11), 2000, pp. 1925-1929
Thorough analysis of quantum mechanical effects on MOS structure characteristics in threshold region
Authors:
Ma, YT
Liu, LT
Yu, ZP
Li, ZJ
Citation: Yt. Ma et al., Thorough analysis of quantum mechanical effects on MOS structure characteristics in threshold region, MICROELEC J, 31(11-12), 2000, pp. 913-921
Authors:
Ma, YT
Liu, LT
Yu, ZP
Li, ZJ
Citation: Yt. Ma et al., Validity and applicability of triangular potential well approximation in modeling of MOS structure inversion and accumulation layer, IEEE DEVICE, 47(9), 2000, pp. 1764-1767
Authors:
Ma, YT
Liu, LT
Yu, ZP
Li, ZJ
Citation: Yt. Ma et al., Simplified method to investigate quantum mechanical effects in MOS structure inversion layer, IEEE DEVICE, 47(6), 2000, pp. 1303-1305
Authors:
Yang, Z
Ma, YT
Li, Y
Chen, ZH
Ma, LS
Citation: Z. Yang et al., The performance of some substitutes for HCFC22 under varying operating conditions, APPL TH ENG, 19(7), 1999, pp. 801-806
Authors:
Ma, YT
Citation: Yt. Ma, An effective memory addressing scheme for FFT processors, IEEE SIGNAL, 47(3), 1999, pp. 907-911
Authors:
Ma, YT
Liu, LT
Li, ZJ
Citation: Yt. Ma et al., A discussion on the universality of inversion layer mobility in MOSFET's, IEEE DEVICE, 46(9), 1999, pp. 1920-1922
Risultati:
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