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Results: 1-17 |
Results: 17
Effect of carbon doping on GaN : Er
Authors: Overberg, M Abernathy, CR MacKenzie, JD Pearton, SJ Wilson, RG Zavada, JM
Citation: M. Overberg et al., Effect of carbon doping on GaN : Er, MAT SCI E B, 81(1-3), 2001, pp. 121-126
Efficient exciton dissociation via two-step photoexcitation in polymeric semiconductors - art. no. 125211
Authors: Silva, C Dhoot, AS Russell, DM Stevens, MA Arias, AC MacKenzie, JD Greenham, NC Friend, RH Setayesh, S Mullen, K
Citation: C. Silva et al., Efficient exciton dissociation via two-step photoexcitation in polymeric semiconductors - art. no. 125211, PHYS REV B, 6412(12), 2001, pp. 5211
Self-organized discotic liquid crystals for high-efficiency organic photovoltaics
Authors: Schmidt-Mende, L Fechtenkotter, A Mullen, K Moons, E Friend, RH MacKenzie, JD
Citation: L. Schmidt-mende et al., Self-organized discotic liquid crystals for high-efficiency organic photovoltaics, SCIENCE, 293(5532), 2001, pp. 1119-1122
Photovoltaic performance and morphology of polyfluorene blends: A combinedmicroscopic and photovoltaic investigation
Authors: Arias, AC MacKenzie, JD Stevenson, R Halls, JJM Inbasekaran, M Woo, EP Richards, D Friend, RH
Citation: Ac. Arias et al., Photovoltaic performance and morphology of polyfluorene blends: A combinedmicroscopic and photovoltaic investigation, MACROMOLEC, 34(17), 2001, pp. 6005-6013
Raman microscopy determination of phase composition in polyfluorene composites
Authors: Stevenson, R Arias, AC Ramsdale, C MacKenzie, JD Richards, D
Citation: R. Stevenson et al., Raman microscopy determination of phase composition in polyfluorene composites, APPL PHYS L, 79(14), 2001, pp. 2178-2180
Comparison of the optical properties of Er3+ doped gallium nitride prepared by metalorganic molecular beam epitaxy (MOMBE) and solid source molecularbeam epitaxy (SSMBE)
Authors: Hommerich, U Seo, JT MacKenzie, JD Abernathy, CR Birkhahn, R Steckl, AJ Zavada, JM
Citation: U. Hommerich et al., Comparison of the optical properties of Er3+ doped gallium nitride prepared by metalorganic molecular beam epitaxy (MOMBE) and solid source molecularbeam epitaxy (SSMBE), MRS I J N S, 5, 2000, pp. NIL_709-NIL_714
Photodiodes based on polyfluorene composites: Influence of morphology
Authors: Halls, JJM Arias, AC MacKenzie, JD Wu, WS Inbasekaran, M Woo, EP Friend, RH
Citation: Jjm. Halls et al., Photodiodes based on polyfluorene composites: Influence of morphology, ADVAN MATER, 12(7), 2000, pp. 498
Near infrared (1.54 mu m) luminescence properties of erbium doped gallium nitride
Authors: Hommerich, U Seo, JT Thaik, M Abernathy, CR MacKenzie, JD Zavada, JM
Citation: U. Hommerich et al., Near infrared (1.54 mu m) luminescence properties of erbium doped gallium nitride, J ALLOY COM, 303, 2000, pp. 331-335
Luminescence characteristics of Er-doped GaN semiconductor thin films
Authors: Zavada, JM Thaik, M Hommerich, U MacKenzie, JD Abernathy, CR Pearton, SJ Wilson, RG
Citation: Jm. Zavada et al., Luminescence characteristics of Er-doped GaN semiconductor thin films, J ALLOY COM, 300, 2000, pp. 207-213
Near infrared luminescent device and optical spectroscopy of Er-doped gallium nitride prepared by metalorganic molecular beam epitaxy
Authors: Seo, JT Hommerich, U MacKenzie, JD Abernathy, CR Zavada, JM
Citation: Jt. Seo et al., Near infrared luminescent device and optical spectroscopy of Er-doped gallium nitride prepared by metalorganic molecular beam epitaxy, J KOR PHYS, 36(5), 2000, pp. 311-315
The effect of Er concentration on the morphology and photoluminescence of GaN : Er
Authors: Overberg, ME Brand, J MacKenzie, JD Abernathy, CR Pearton, SJ Zavada, JM
Citation: Me. Overberg et al., The effect of Er concentration on the morphology and photoluminescence of GaN : Er, J ELCHEM SO, 147(8), 2000, pp. 3117-3119
Defect formation near GaN surfaces and interfaces
Authors: Brillson, LJ Levin, TM Jessen, GH Young, AP Tu, C Naoi, Y Ponce, FA Yang, Y Lapeyre, GJ MacKenzie, JD Abernathy, CR
Citation: Lj. Brillson et al., Defect formation near GaN surfaces and interfaces, PHYSICA B, 274, 1999, pp. 70-74
Low-energy cathodoluminescence spectroscopy of erbium-doped gallium nitride surfaces
Authors: Levin, TM Young, AP Schafer, J Brillson, LJ MacKenzie, JD Abernathy, CR
Citation: Tm. Levin et al., Low-energy cathodoluminescence spectroscopy of erbium-doped gallium nitride surfaces, J VAC SCI A, 17(6), 1999, pp. 3437-3442
Ill-nitride dry etching: Comparison of inductively coupled plasma chemistries
Authors: Cho, H Hahn, YB Hays, DC Abernathy, CR Donovan, SM MacKenzie, JD Pearton, SJ Han, J Shul, RJ
Citation: H. Cho et al., Ill-nitride dry etching: Comparison of inductively coupled plasma chemistries, J VAC SCI A, 17(4), 1999, pp. 2202-2208
Predominant V-H genes expressed in innate antibodies are associated with distinctive antigen-binding sites
Authors: Seidl, KJ Wilshire, JA MacKenzie, JD Kantor, AB Herzenberg, LA Herzenberg, LA
Citation: Kj. Seidl et al., Predominant V-H genes expressed in innate antibodies are associated with distinctive antigen-binding sites, P NAS US, 96(5), 1999, pp. 2262-2267
Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics
Authors: Ren, F Abernathy, CR MacKenzie, JD Gila, BP Pearton, SJ Hong, M Marcus, MA Schurman, MJ Baca, AG Shul, RJ
Citation: F. Ren et al., Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics, SOL ST ELEC, 42(12), 1998, pp. 2177-2181
High-density plasma etch selectivity for the III-V nitrides
Authors: Shul, RJ Willison, CG Bridges, MM Han, J Lee, JW Pearton, SJ Abernathy, CR MacKenzie, JD Donovan, SM
Citation: Rj. Shul et al., High-density plasma etch selectivity for the III-V nitrides, SOL ST ELEC, 42(12), 1998, pp. 2269-2276
Risultati: 1-17 |