AAAAAA
Results: 1-25/28
Authors:
Pons, M
Meziere, J
Dedulle, JM
Kuan, SWT
Blanquet, E
Bernard, C
Ferret, P
Di Cioccio, L
Billon, T
Madar, R
Citation: M. Pons et al., Simulation of the large-area growth of homoepitaxial 4H-SiC by chemical vapor deposition, J PHYS IV, 11(PR3), 2001, pp. 1079-1086
Authors:
Hassen, F
M'Ghaieth, R
Maaref, H
Madar, R
Citation: F. Hassen et al., Morphological and optical characterization of porous silicon carbide, MAT SCI E C, 15(1-2), 2001, pp. 113-115
Authors:
Chenevier, B
Chaix-Pluchery, O
Matko, I
Madar, R
La Via, F
Citation: B. Chenevier et al., Structural investigations of the C49-C54 transformation in TiSi2 thin films, MICROEL ENG, 55(1-4), 2001, pp. 115-122
Authors:
Proust, M
Judong, F
Gilet, JM
Liauzu, L
Madar, R
Citation: M. Proust et al., CVD and PVD copper integration for dual damascene metallization in a 0.18 mu m process, MICROEL ENG, 55(1-4), 2001, pp. 269-275
Authors:
Pernot, E
Pernot-Rejmankova, P
Anikin, M
Pelissier, B
Moulin, C
Madar, R
Citation: E. Pernot et al., Structural defects in SiC ingots investigated by synchrotron diffraction imaging, J PHYS D, 34(10A), 2001, pp. A136-A139
Authors:
Chenevier, B
Chaix-Pluchery, O
Matko, I
Senateur, JP
Madar, R
La Via, F
Citation: B. Chenevier et al., In situ investigations of the metal/silicon reaction in Ti/Si thin films capped with TiN: Volumetric analysis of the C49-C54 transformation, APPL PHYS L, 79(14), 2001, pp. 2184-2186
Authors:
Madar, R
Pons, M
Citation: R. Madar et M. Pons, Crystallogenesis of silicon carbide: Principles, development, characterization and modeling, VIDE, 55(298), 2000, pp. 325
Authors:
Ramberg, CE
Blanquet, E
Pons, M
Bernard, C
Madar, R
Citation: Ce. Ramberg et al., Application of equilibrium thermodynamics to the development of diffusion barriers for copper metallization - (invited), MICROEL ENG, 50(1-4), 2000, pp. 357-368
Authors:
Pons, M
Bernard, C
Branquet, E
Madar, R
Citation: M. Pons et al., Combined thermodynamic and mass transport modeling for material processingfrom the vapor phase, THIN SOL FI, 365(2), 2000, pp. 264-274
Authors:
Grabarnik, M
Lemcoff, NG
Madar, R
Abramson, S
Weinman, S
Fuchs, B
Citation: M. Grabarnik et al., On five- vs six-membered diacetal formation from threitol and the intermediacy of unusually stable protonated species, J ORG CHEM, 65(6), 2000, pp. 1636-1642
Authors:
Jimenez, C
Paillous, M
Madar, R
Senateur, JP
Jones, AC
Citation: C. Jimenez et al., Deposition of Ta2O5 and (TiO2)-(Ta2O5) films from Ta(OEt)(4)(DMAE) and Ti(OEt)(2)(DMAE)(2), by IMOCVD, J PHYS IV, 9(P8), 1999, pp. 569-573
Authors:
de Caro, D
Brissonneau, L
Boursier, D
Madar, R
Vahlas, C
Citation: D. De Caro et al., Composition and magnetic properties of MOCVD processed thin films from nickelocene, J PHYS IV, 9(P8), 1999, pp. 1099-1106
Authors:
Pisch, A
Blanquet, E
Pons, M
Bernard, C
Anikin, M
Dedulle, JM
Madar, R
Citation: A. Pisch et al., Modelling of SiC sublimation growth process: Influence of experimental parameters on crystal shape, J PHYS IV, 9(P8), 1999, pp. 213-219
Authors:
Brissonneau, L
de Caro, D
Boursier, D
Madar, R
Vahlas, C
Citation: L. Brissonneau et al., MOCVD-processed Ni films from nickelocene. Part II: Carbon content of the deposits, CHEM VAPOR, 5(4), 1999, pp. 143-149
Authors:
Anderbouhr, S
Gilles, S
Blanquet, E
Bernard, C
Madar, R
Citation: S. Anderbouhr et al., Thermodynamic modeling of the Ti-Al-N system and application to the simulation of CVD processes of the (Ti,Al)N metastable phase, CHEM VAPOR, 5(3), 1999, pp. 109-115
Authors:
Pons, M
Anikin, M
Chourou, K
Dedulle, JM
Madar, R
Blanquet, E
Pisch, A
Bernard, C
Grosse, P
Faure, C
Basset, G
Grange, Y
Citation: M. Pons et al., State of the art in the modelling of SiC sublimation growth, MAT SCI E B, 61-2, 1999, pp. 18-28
Authors:
Grosse, P
Basset, G
Calvat, C
Couchaud, M
Faure, C
Ferrand, B
Grange, Y
Anikin, M
Bluet, JM
Chourou, K
Madar, R
Citation: P. Grosse et al., Influence of reactor cleanness and process conditions on the growth by PVTand the purity of 4H and 6H SiC crystals, MAT SCI E B, 61-2, 1999, pp. 58-62
Authors:
Milita, S
Madar, R
Baruchel, J
Anikin, M
Argunova, T
Citation: S. Milita et al., Coherent X-ray imaging investigation of macrodefects and micropipes on SiC, MAT SCI E B, 61-2, 1999, pp. 63-67
Authors:
Anikin, M
Chourou, K
Pons, M
Bluet, JM
Madar, R
Grosse, P
Faure, C
Basset, G
Grange, Y
Citation: M. Anikin et al., Influence of growth conditions on the defect formation in SiC ingots, MAT SCI E B, 61-2, 1999, pp. 73-76
Authors:
Chourou, K
Anikin, M
Bluet, JM
Dedulle, JM
Madar, R
Pons, M
Blanquet, E
Bernard, C
Grosse, P
Faure, C
Basset, G
Grange, Y
Citation: K. Chourou et al., Modelling of SiC sublimation growth process: analyses of macrodefects formation, MAT SCI E B, 61-2, 1999, pp. 82-85
Authors:
Bluet, JM
Chourou, K
Anikin, M
Madar, R
Citation: Jm. Bluet et al., Weak phonon modes observation using infrared reflectivity for 4H, 6H and 15R polytypes, MAT SCI E B, 61-2, 1999, pp. 212-216
Authors:
Lauer, V
Bremond, G
Souifi, A
Guillot, G
Chourou, K
Anikin, M
Madar, R
Clerjaud, B
Naud, C
Citation: V. Lauer et al., Electrical and optical characterisation of vanadium in 4H and 6H-SiC, MAT SCI E B, 61-2, 1999, pp. 248-252
Authors:
Camassel, J
Juillaguet, S
Planes, N
Raymond, A
Grosse, P
Basset, G
Faure, C
Couchaud, M
Bluet, JM
Chourou, K
Anikin, M
Madar, R
Citation: J. Camassel et al., Optical assessment of purity improvement effects in bulk 6H and 4H-SiC wafers grown by physical vapor transport, MAT SCI E B, 61-2, 1999, pp. 258-264
Authors:
Bernard, C
Pons, M
Blanquet, E
Madar, R
Citation: C. Bernard et al., Thermodynamic calculations as the basis for CVD production of silicide coatings, MRS BULL, 24(4), 1999, pp. 27-31
Authors:
Kreisel, J
Chaix-Pluchery, O
Perrier, C
Vincent, H
Lucazeau, G
Madar, R
Citation: J. Kreisel et al., Vibrational spectra of transition metal phosphosilicides MSi4P4 (M = Fe, Ru, Os), J RAMAN SP, 30(5), 1999, pp. 417-420