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Results:
1-7
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Results: 7
Authors:
Kunert, HW
Maurice, TP
Brink, DJ
Prinsloo, LC
Malherbe, JB
Camassel, J
Citation: Hw. Kunert et al., Raman and photoluminescence spectroscopy from N-2(+)-ion implanted and alpha-irradiated and annealed GaN/sapphire, NUCL INST B, 181, 2001, pp. 286-292
Authors:
Kunert, HW
Malherbe, JB
Brink, DJ
Odendaal, RQ
Prinsloo, LC
Camassel, J
Allegre, J
Zeaiter, K
Llinares, C
Citation: Hw. Kunert et al., Optical properties of as grown and ion implanted (Ar+,N-2(+),alpha) GaAs nipi doping superlattices, APPL SURF S, 166(1-4), 2000, pp. 77-81
Authors:
Hayes, M
Hauser, T
Friedland, E
Thugwane, SJ
Malherbe, JB
Naidoo, SR
Citation: M. Hayes et al., Range parameters of aluminium implants in medium and heavy mass metals, NUCL INST B, 161, 2000, pp. 150-154
Authors:
Kunert, HW
Juillaguet, S
Camassel, J
Malherbe, JB
Odendaal, RQ
Brink, DJ
Prinsloo, LC
Citation: Hw. Kunert et al., Optical properties of As-grown, alpha-particle irradiated and N-2(+)-ion implaned GaN, PHYS ST S-B, 216(1), 1999, pp. 619-623
Authors:
Malherbe, JB
Odendaal, RQ
Citation: Jb. Malherbe et Rq. Odendaal, Ton sputtering, surface topography, SPM and surface analysis of electronicmaterials, APPL SURF S, 145, 1999, pp. 192-200
Authors:
Legodi, MJ
Auret, FD
Goodman, SA
Malherbe, JB
Citation: Mj. Legodi et al., Schottky barrier modification and electrical characterization of low energy He-ion bombardment induced defects in n- and p-type GaAs, NUCL INST B, 148(1-4), 1999, pp. 441-445
Authors:
Mamor, M
Auret, FD
Goodman, SA
Malherbe, JB
Citation: M. Mamor et al., Argon plasma sputter etching induced defect levels in strained, epitaxial p-type Si-Ge alloys, THIN SOL FI, 344, 1999, pp. 416-419
Risultati:
1-7
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