AAAAAA
Results: 1-25/31
Authors:
Eliseev, PG
Li, H
Liu, GT
Stintz, A
Newell, TC
Lester, LF
Malloy, KJ
Citation: Pg. Eliseev et al., Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers, IEEE S T QU, 7(2), 2001, pp. 135-142
Authors:
Wang, RH
Stintz, A
Varangis, PM
Newell, TC
Li, H
Malloy, KJ
Lester, LF
Citation: Rh. Wang et al., Room-temperature operation of InAs quantum-dash lasers on InP (001), IEEE PHOTON, 13(8), 2001, pp. 767-769
Authors:
Gopaladasu, P
Cecchi, JL
Malloy, KJ
Kaspi, R
Citation: P. Gopaladasu et al., Response surface modeling of the composition of AlAsySb1-y alloys grown bymolecular beam epitaxy, J CRYST GR, 225(2-4), 2001, pp. 556-560
Authors:
Gray, AL
Stintz, A
Malloy, KJ
Newell, TC
Lester, LF
Citation: Al. Gray et al., Morphology and relaxation in InyGa1-yAs/GaAs multi-layer structures, J CRYST GR, 222(4), 2001, pp. 726-734
Authors:
Gelbard, F
Malloy, KJ
Citation: F. Gelbard et Kj. Malloy, Modeling quantum structures with the boundary element method, J COMPUT PH, 172(1), 2001, pp. 19-39
Authors:
Lee, SC
Malloy, KJ
Brueck, SRJ
Citation: Sc. Lee et al., Nanoscale selective growth of GaAs by molecular beam epitaxy, J APPL PHYS, 90(8), 2001, pp. 4163-4168
Authors:
Rice, AK
Malloy, KJ
Citation: Ak. Rice et Kj. Malloy, Microstructural contributions to hole transport in p-type GaN : Mg, J APPL PHYS, 89(5), 2001, pp. 2816-2825
Authors:
Lee, SC
Malloy, KJ
Citation: Sc. Lee et Kj. Malloy, Blocking of resonant tunneling by electron Bragg reflectors in GaAs/AlxGa1-xAs quantum well structures, J APPL PHYS, 89(2), 2001, pp. 1175-1179
Authors:
Huang, XD
Stintz, A
Li, H
Rice, A
Liu, GT
Lester, LF
Cheng, J
Malloy, KJ
Citation: Xd. Huang et al., Bistable operation of a two-section 1.3-mu m InAs quantum dot laser - Absorption saturation and the quantum confined Stark effect, IEEE J Q EL, 37(3), 2001, pp. 414-417
Authors:
Lee, SC
Dawson, LR
Malloy, KJ
Brueck, SRJ
Citation: Sc. Lee et al., Molecular-beam epitaxial growth of one-dimensional rows of InAs quantum dots on nanoscale-patterned GaAs, APPL PHYS L, 79(16), 2001, pp. 2630-2632
Authors:
Huang, XD
Stintz, A
Li, H
Lester, LF
Cheng, J
Malloy, KJ
Citation: Xd. Huang et al., Passive mode-locking in 1.3 mu m two-section InAs quantum dot lasers, APPL PHYS L, 78(19), 2001, pp. 2825-2827
Authors:
Stintz, A
Liu, GT
Gray, AL
Spillers, R
Delgado, SM
Malloy, KJ
Citation: A. Stintz et al., Characterization of InAs quantum dots in strained InxGa1-xAs quantum wells, J VAC SCI B, 18(3), 2000, pp. 1496-1501
Authors:
Eliseev, PG
Li, H
Liu, GT
Stintz, A
Newell, TC
Lester, LE
Malloy, KJ
Citation: Pg. Eliseev et al., Optical gain in InAs/InGaAs quantum-dot structures: Experiments and theoretical model, QUANTUM EL, 30(8), 2000, pp. 664-668
Authors:
Mojahedi, M
Schamiloglu, E
Hegeler, F
Malloy, KJ
Citation: M. Mojahedi et al., Time-domain detection of superluminal group velocity for single microwave pulses, PHYS REV E, 62(4), 2000, pp. 5758-5766
Authors:
Li, H
Liu, GT
Varangis, PM
Newell, TC
Stintz, A
Fuchs, B
Malloy, KJ
Lester, LF
Citation: H. Li et al., 150-nm tuning range in a grating-coupled external cavity quantum-dot laser, IEEE PHOTON, 12(7), 2000, pp. 759-761
Authors:
Stintz, A
Liu, GT
Li, H
Lester, LF
Malloy, KJ
Citation: A. Stintz et al., Low-threshold current density 1.3-mu m InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure, IEEE PHOTON, 12(6), 2000, pp. 591-593
Authors:
Huang, XD
Stintz, A
Hains, CP
Liu, GT
Cheng, J
Malloy, KJ
Citation: Xd. Huang et al., Very low threshold current density room temperature continuous-wave lasingfrom a single-layer InAs quantum-dot laser, IEEE PHOTON, 12(3), 2000, pp. 227-229
Authors:
Liu, GT
Stintz, A
Pease, EA
Newell, TC
Malloy, KJ
Lester, LF
Citation: Gt. Liu et al., 1.58-mu m lattice-matched and strained digital alloy AlGaInAs-InP multiple-quantum-well lasers, IEEE PHOTON, 12(1), 2000, pp. 4-6
Authors:
Mourad, C
Gianardi, D
Malloy, KJ
Kaspi, R
Citation: C. Mourad et al., 2 mu m GaInAsSb/AlGaAsSb midinfrared laser grown digitally on GaSb by modulated-molecular beam epitaxy, J APPL PHYS, 88(10), 2000, pp. 5543-5546
Authors:
Rice, AK
Malloy, KJ
Citation: Ak. Rice et Kj. Malloy, Bulk noise processes and their correlation to structural imperfections in magnesium-doped p-type GaN grown on sapphire, J APPL PHYS, 87(11), 2000, pp. 7892-7895
Authors:
Mojahedi, M
Schamiloglu, E
Agi, K
Malloy, KJ
Citation: M. Mojahedi et al., Frequency-domain detection of superluminal group velocity in a distributedBragg reflector, IEEE J Q EL, 36(4), 2000, pp. 418-424
Authors:
Eliseev, P
Li, H
Stintz, A
Liu, GT
Newell, TC
Malloy, KJ
Lester, LF
Citation: P. Eliseev et al., Tunable grating-coupled laser oscillation and spectral hole burning in an InAs quantum-dot laser diode, IEEE J Q EL, 36(4), 2000, pp. 479-485
Authors:
Liu, GT
Stintz, A
Li, H
Newell, TC
Gray, AL
Varangis, PM
Malloy, KJ
Lester, LF
Citation: Gt. Liu et al., The influence of quantum-well composition on the performance of quantum dot lasers using InAs/InGaAs dots-in-a-well (DWELL) structures, IEEE J Q EL, 36(11), 2000, pp. 1272-1279
Authors:
Varangis, PM
Li, H
Liu, GT
Newell, TC
Stintz, A
Fuchs, B
Malloy, KJ
Lester, LF
Citation: Pm. Varangis et al., Low-threshold quantum dot lasers with 201 nm tuning range, ELECTR LETT, 36(18), 2000, pp. 1544-1545
Authors:
Newell, TC
Varangis, PM
Pease, E
Stintz, A
Liu, GT
Malloy, KJ
Lester, LF
Citation: Tc. Newell et al., High-power AlGaInAs strained multiquantum well lasers operating at 1.52 mum, ELECTR LETT, 36(11), 2000, pp. 955-956