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Results: 1-12 |
Results: 12
Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon: the case of BF2+ implantation
Authors: Dusch, A Marcon, J Masmoudi, K Olivie, F Benzohra, M Ketata, K Ketata, M
Citation: A. Dusch et al., Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon: the case of BF2+ implantation, MAT SCI E B, 80(1-3), 2001, pp. 65-67
Beryllium diffusion in InGaAs/InGaAsP structures grown by gas source molecular beam epitaxy
Authors: Koumetz, S Valet, O Marcon, J Ketata, K Ketata, M
Citation: S. Koumetz et al., Beryllium diffusion in InGaAs/InGaAsP structures grown by gas source molecular beam epitaxy, MAT SCI E B, 71, 2000, pp. 171-174
A comprehensive study of beryllium diffusion in InGaAs using different forms of kick-out mechanism
Authors: Marcon, J Koumetz, S Ketata, K Ketata, M Caputo, JG
Citation: J. Marcon et al., A comprehensive study of beryllium diffusion in InGaAs using different forms of kick-out mechanism, EPJ-APPL PH, 8(1), 1999, pp. 7-18
The modeling of beryllium diffusion in InGaAsP layers grown by GSMBE undernonequilibrium conditions
Authors: Ketata, M Ketata, K Koumetz, S Marcon, J Dubois, C
Citation: M. Ketata et al., The modeling of beryllium diffusion in InGaAsP layers grown by GSMBE undernonequilibrium conditions, EPJ-APPL PH, 8(1), 1999, pp. 19-24
Simulation of post-growth Be diffusion in InGaAsP grown by GSMBE
Authors: Koumetz, S Ketata, K Ketata, M Marcon, J
Citation: S. Koumetz et al., Simulation of post-growth Be diffusion in InGaAsP grown by GSMBE, COMP MAT SC, 15(1), 1999, pp. 63-68
Redistribution of Be in InGaAsP layers grown by GSMBE during post-growth annealing
Authors: Ketata, K Ketata, M Koumetz, S Marcon, J
Citation: K. Ketata et al., Redistribution of Be in InGaAsP layers grown by GSMBE during post-growth annealing, J ALLOY COM, 285(1-2), 1999, pp. L1-L4
Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaAs/InGaAsP, InGaAs/InP heterointerfaces
Authors: Koumetz, S Marcon, J Gautier, S Ketata, K Ketata, M Dubois, C
Citation: S. Koumetz et al., Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaAs/InGaAsP, InGaAs/InP heterointerfaces, MAT SCI E B, 66(1-3), 1999, pp. 55-57
Modeling the diffusion of Be in InGaAs/InGaAsP epitaxial heterostructures under non-equilibrium point defect conditions
Authors: Ketata, K Ketata, M Koumetz, S Marcon, J Valet, O
Citation: K. Ketata et al., Modeling the diffusion of Be in InGaAs/InGaAsP epitaxial heterostructures under non-equilibrium point defect conditions, PHYSICA B, 274, 1999, pp. 823-826
Beryllium diffusion mechanisms in InGaAs compounds grown by gas source molecular beam epitaxy
Authors: Ketata, K Ketata, M Koumetz, S Marcon, J
Citation: K. Ketata et al., Beryllium diffusion mechanisms in InGaAs compounds grown by gas source molecular beam epitaxy, EUROPH LETT, 45(3), 1999, pp. 348-353
Modelling and simulation of beryllium diffusion in InGaAs compounds grown by gas source molecular beam epitaxy
Authors: Ketata, K Ketata, M Koumetz, S Marcon, J Masmoudi, M
Citation: K. Ketata et al., Modelling and simulation of beryllium diffusion in InGaAs compounds grown by gas source molecular beam epitaxy, MODEL SIM M, 6(6), 1998, pp. 747-753
A study of Be diffusion in InGaAsP layers grown by gas-source molecular beam epitaxy
Authors: Koumetz, S Ketata, K Ketata, M Marcon, J
Citation: S. Koumetz et al., A study of Be diffusion in InGaAsP layers grown by gas-source molecular beam epitaxy, J PHYS D, 31(24), 1998, pp. 3421-3427
Be diffusion in InGaAs layers grown by gas source molecular beam epitaxy
Authors: Ketata, M Ketata, K Koumetz, S Martin, P Marcon, J Dubois, C
Citation: M. Ketata et al., Be diffusion in InGaAs layers grown by gas source molecular beam epitaxy, J CRYST GR, 194(3-4), 1998, pp. 297-300
Risultati: 1-12 |