Authors:
El Maliki, H
Marsillac, S
Faulques, E
Wery, J
Citation: H. El Maliki et al., The influence of the substitution of Te for Se on the photoconductive properties of In2Se3-xTe3x thin films, J PHYS-COND, 13(9), 2001, pp. 1839-1850
Citation: So. Djobo et al., Poly(N-vinylcarbazole) (PVK) deposited by evaporation for light emitting diodes thin films structures, SYNTH METAL, 122(1), 2001, pp. 131-133
Citation: Jc. Bernede et S. Marsillac, Comment on the paper of M. Emziane and R. LeNy: 'Photoconductivity of textured gamma-In2Se3-xTex (0 <= x <= 0.5) thin films', THIN SOL FI, 385(1-2), 2001, pp. 311-311
Authors:
Barreau, N
Marsillac, S
Bernede, JC
Ben Nasrallah, T
Belgacem, S
Citation: N. Barreau et al., Optical properties of wide band gap indium sulphide thin films obtained byphysical vapor deposition, PHYS ST S-A, 184(1), 2001, pp. 179-186
Citation: N. Barreau et al., Physico-chemical characterization of beta-In2S3 thin films synthesized by solid-state reaction, induced by annealing, of the constituents sequentially deposited in thin layers, VACUUM, 56(2), 2000, pp. 101-106
Authors:
El Moctar, CO
Kambas, K
Marsillac, S
Anagnostopoulos, A
Bernede, JC
Benchouck, K
Citation: Co. El Moctar et al., Optical properties of CuAlX2 (X = Se, Te) thin films obtained by annealingof copper, aluminum and chalcogen layers sequentially deposited, THIN SOL FI, 371(1-2), 2000, pp. 195-200
Citation: Jc. Bernede et S. Marsillac, Some comments on the paper of M Emziane and R LeNy: 'Crystallization of In2Se3 semi-conductor thin films by post deposition heat treatment. Thicknessand substrate effects', J PHYS D, 33(7), 2000, pp. 874-875
Authors:
Gourmelon, E
Bernede, JC
Pouzet, J
Marsillac, S
Citation: E. Gourmelon et al., Textured MoS2 thin films obtained on tungsten: Electrical properties of the W/MoS2 contact, J APPL PHYS, 87(3), 2000, pp. 1182-1186
Authors:
Marsillac, S
Bernede, JC
Emziane, M
Wery, J
Faulques, E
Le Ray, P
Citation: S. Marsillac et al., Properties of photoconductive In2Se3 thin films, crystallized by post-deposition heat treatment in nitrogen atmosphere, APPL SURF S, 151(3-4), 1999, pp. 171-179
Authors:
Marsillac, S
Bernede, JC
Emziane, M
Conan, A
Citation: S. Marsillac et al., New gamma-In2Se3/TCO (SnO2 or ZnO) thin films rectifying heterojunction (vol 315, pg 5, 1998), THIN SOL FI, 342(1-2), 1999, pp. 317-317
Authors:
El Moctar, CO
Marsillac, S
Bernede, JC
Conan, A
Benchouk, K
Khelil, A
Citation: Co. El Moctar et al., Preparation of thin CuAlSe2 films by annealing of stacked Cu/Al/Se/Al... layers, study of deposition conditions, PHYS ST S-A, 174(1), 1999, pp. 213-220
Authors:
Benchouk, K
El Moctar, C
Bernede, JC
Marsillac, S
Pouzet, J
Barreau, N
Emziane, M
Citation: K. Benchouk et al., Growth and physicochemical characterization of CuAlTe2 films obtained by reaction, induced by annealing, between Cu/Al/Te/Al/Cu ... Al/Cu/Al/Te layers sequentially deposited, J MATER SCI, 34(8), 1999, pp. 1847-1853