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Results:
1-13
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Results: 13
Authors:
Bellodi, M
Martino, JA
Citation: M. Bellodi et Ja. Martino, Study of the leakage drain current carriers in silicon-on-insulator MOSFETs at high temperatures, SOL ST ELEC, 45(5), 2001, pp. 683-688
Authors:
Marques, AEB
dos Santos, SG
Navia, AR
Sonnenberg, V
Martino, JA
Citation: Aeb. Marques et al., Physical and electrical characterization of thin nickel films obtained from electroless plating onto aluminum, PHYS ST S-A, 187(1), 2001, pp. 75-84
Authors:
Pavanello, MA
Martino, JA
Dessard, V
Flandre, D
Citation: Ma. Pavanello et al., An asymmetric channel SOI nMOSFET for reducing parasitic effects and improving output characteristics, EL SOLID ST, 3(1), 2000, pp. 50-52
Authors:
Pavanello, MA
Martino, JA
Dessard, V
Flandre, D
Citation: Ma. Pavanello et al., Analog performance and application of graded-channel fully depleted SOI MOSFETs, SOL ST ELEC, 44(7), 2000, pp. 1219-1222
Authors:
Pavanello, MA
Martino, JA
Flandre, D
Citation: Ma. Pavanello et al., Graded-channel fully depleted Silicon-On-Insulator nMOSFET for reducing the parasitic bipolar effects, SOL ST ELEC, 44(6), 2000, pp. 917-922
Authors:
Nicolett, AS
Martino, JA
Simoen, E
Claeys, C
Citation: As. Nicolett et al., Extraction of the lightly doped drain concentration of fully depleted SOINMOSFETs using the back gate bias effect, SOL ST ELEC, 44(4), 2000, pp. 677-684
Authors:
Nicolett, AS
Martino, JA
Simoen, E
Claeys, C
Citation: As. Nicolett et al., Simultaneous extraction of the silicon film and front oxide thicknesses onfully depleted SOI nMOSFETs, SOL ST ELEC, 44(11), 2000, pp. 1961-1969
Authors:
Bellodi, M
Martino, JA
Citation: M. Bellodi et Ja. Martino, Leakage drain current behavior in an accumulation mode SOI p-channel MOSFET operating at high temperatures, EL SOLID ST, 2(7), 1999, pp. 345-346
Authors:
Sonnenberg, V
Martino, JA
Citation: V. Sonnenberg et Ja. Martino, A simple method for minimizing the transient effect in SOI nMOSFETs at lowtemperature, EL SOLID ST, 2(11), 1999, pp. 585-586
Authors:
Martino, JA
Katritch, V
Olson, WK
Citation: Ja. Martino et al., Influence of nucleosome structure on the three-dimensional folding of idealized minichromosomes, STRUCT F D, 7(8), 1999, pp. 1009-1022
Authors:
Sonnenberg, V
Martino, JA
Citation: V. Sonnenberg et Ja. Martino, Analysis of transition region and accumulation layer effect in the subthreshold slope in SOI nMOSFETs and their influences on the interface trap density extraction, SOL ST ELEC, 43(12), 1999, pp. 2191-2199
Authors:
Pavanello, MA
Martino, JA
Citation: Ma. Pavanello et Ja. Martino, Extraction of the oxide charges at the silicon substrate interface in Silicon-On-Insulator MOSFET's, SOL ST ELEC, 43(11), 1999, pp. 2039-2046
Authors:
Sonnenberg, V
Martino, JA
Citation: V. Sonnenberg et Ja. Martino, Influence of accumulation layer on interface trap density extraction, ELECTR LETT, 34(25), 1998, pp. 2439-2441
Risultati:
1-13
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