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Citation: Wn. Washburn et al., Beta 3 agonists. Part 1: Evolution from inception to BMS-194449, BIOORG MED, 11(23), 2001, pp. 3035-3039
Authors:
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Abboa-Offei, BE
Cap, M
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George, RJ
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Dickinson, KE
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Citation: Av. Gavai et al., BMS-196085: A potent and selective full agonist of the human beta(3) adrenergic receptor, BIOORG MED, 11(23), 2001, pp. 3041-3044
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Citation: P. Bhattacharya et al., Carrier dynamics in self-organized quantum dots and their application to long-wavelength sources and detectors, J CRYST GR, 227, 2001, pp. 27-35
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Citation: S. Krishna et al., Intersubband gain and stimulated emission in long-wavelength (lambda=13 mum) intersubband In(Ga)As-GaAs quantum-dot electroluminescent devices, IEEE J Q EL, 37(8), 2001, pp. 1066-1074
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Krishna, S
Bhattacharya, P
McCann, PJ
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Citation: S. Krishna et al., Reply to Comment on 'Room-temperature long-wavelength (lambda=13.3 mu m) unipolar quantum dot intersubband laser, ELECTR LETT, 37(2), 2001, pp. 97-98
Citation: Wz. Shen et al., Study of band structure in PbSe/PbSrSe quantum wells for midinfrared laserapplications, APPL PHYS L, 79(16), 2001, pp. 2579-2581
Citation: Hz. Wu et al., Unambiguous observation of subband transitions from longitudinal valley and oblique valleys in IV-VI multiple quantum wells, APPL PHYS L, 78(15), 2001, pp. 2199-2201
Authors:
Fang, XM
Namjou, K
Chao, IN
McCann, PJ
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Citation: Xm. Fang et al., Molecular beam epitaxy of PbSrSe and PbSe/PbSrSe multiple quantum well structures for use in midinfrared light emitting devices, J VAC SCI B, 18(3), 2000, pp. 1720-1723
Citation: Cp. Li et al., Strain relaxation in PbSnSe and PbSe/PbSnSe layers grown by liquid-phase epitaxy on (100)-oriented silicon, J CRYST GR, 208(1-4), 2000, pp. 423-430
Authors:
Krishna, S
Bhattacharya, P
McCann, PJ
Namjou, K
Citation: S. Krishna et al., Room-temperature long-wavelength (lambda=13.3 mu m) unipolar quantum dot intersubband laser, ELECTR LETT, 36(18), 2000, pp. 1550-1551
Authors:
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Xu, G
McCann, PJ
Fang, XM
Dai, N
Felix, CL
Bewley, WW
Vurgaftman, I
Meyer, JR
Citation: Z. Shi et al., IV-VI compound midinfrared high-reflectivity mirrors and vertical-cavity surface-emitting lasers grown by molecular-beam epitaxy, APPL PHYS L, 76(25), 2000, pp. 3688-3690
Authors:
Krishna, S
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Bhattacharya, P
McCann, PJ
Namjou, K
Citation: S. Krishna et al., Room-temperature far-infrared emission from a self-organized InGaAs/GaAs quantum-dot laser, APPL PHYS L, 76(23), 2000, pp. 3355-3357
Authors:
McCann, PJ
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Citation: Pj. Mccann et al., IV-VI semiconductor growth on silicon substrates and new mid-infrared laser fabrication methods, SPECT ACT A, 55(10), 1999, pp. 1999-2005
Authors:
Wu, HZ
Fang, XM
Salas, R
McAlister, D
McCann, PJ
Citation: Hz. Wu et al., Molecular beam epitaxy growth of PbSe on BaF2-coated Si(111) and observation of the PbSe growth interface, J VAC SCI B, 17(3), 1999, pp. 1263-1266