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Results:
1-14
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Results: 14
Authors:
Melngailis, J
Citation: J. Melngailis, Microelectronics and nanometer structures - Processing, measurement, and phenomena - Preface, J VAC SCI B, 18(6), 2000, pp. 2876-2876
Authors:
Aggarwal, S
Ganpule, C
Jenkins, IG
Nagaraj, B
Stanishevsky, A
Melngailis, J
Williams, E
Ramesh, R
Citation: S. Aggarwal et al., High density ferroelectric memories: Materials, processing and scaling, INTEGR FERR, 29(1-2), 2000, pp. 213-225
Authors:
Machalett, F
Edinger, K
Melngailis, J
Diegel, M
Steenbeck, K
Steinbeiss, E
Citation: F. Machalett et al., Direct patterning of gold oxide thin films by focused ion-beam irradiation, APPL PHYS A, 71(3), 2000, pp. 331-335
Authors:
Machalett, F
Edinger, K
Melngailis, J
Seidel, P
Venkatesan, T
Citation: F. Machalett et al., Accurate location and marking of grain boundaries using focused ion and electron beams, NUCL INST B, 170(3-4), 2000, pp. 474-482
Authors:
Steinhauer, DE
Vlahacos, CP
Wellstood, FC
Anlage, SM
Canedy, C
Ramesh, R
Stanishevsky, A
Melngailis, J
Citation: De. Steinhauer et al., Quantitative imaging of dielectric permittivity and tunability with a near-field scanning microwave microscope, REV SCI INS, 71(7), 2000, pp. 2751-2758
Authors:
Machalett, F
Edinger, K
Ye, L
Melngailis, J
Venkatesan, T
Diegel, M
Steenbeck, K
Citation: F. Machalett et al., Focused-ion-beam writing of electrical connections into platinum oxide films, APPL PHYS L, 76(23), 2000, pp. 3445-3447
Authors:
DeMarco, AJ
Melngailis, J
Citation: Aj. Demarco et J. Melngailis, Lateral growth of focused ion beam deposited platinum for stencil mask repair, J VAC SCI B, 17(6), 1999, pp. 3154-3157
Authors:
Didenko, L
Guharay, SK
Orloff, J
Melngailis, J
Citation: L. Didenko et al., Coulomb interactions in a focused ion beam column and design guidelines for an experimental system: comparison of results from MONTEC and BOERSCH, NUCL INST A, 427(1-2), 1999, pp. 121-125
Authors:
Ganpule, CS
Stanishevsky, A
Su, Q
Aggarwal, S
Melngailis, J
Williams, E
Ramesh, R
Citation: Cs. Ganpule et al., Scaling of ferroelectric properties in thin films, APPL PHYS L, 75(3), 1999, pp. 409-411
Authors:
Ganpule, CS
Stanishevsky, A
Aggarwal, S
Melngailis, J
Williams, E
Ramesh, R
Joshi, V
de Araujo, CP
Citation: Cs. Ganpule et al., Scaling of ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films, APPL PHYS L, 75(24), 1999, pp. 3874-3876
Authors:
Steinhauer, DE
Vlahacos, CP
Wellstood, FC
Anlage, SM
Canedy, C
Ramesh, R
Stanishevsky, A
Melngailis, J
Citation: De. Steinhauer et al., Imaging of microwave permittivity, tunability, and damage recovery in (Ba,Sr)TiO3 thin films, APPL PHYS L, 75(20), 1999, pp. 3180-3182
Authors:
Edinger, K
Melngailis, J
Orloff, J
Citation: K. Edinger et al., Study of precursor gases for focused ion beam insulator deposition, J VAC SCI B, 16(6), 1998, pp. 3311-3314
Authors:
Wang, W
McCarthy, D
Park, D
Ma, D
Marrian, C
Peckerar, M
Goldsman, N
Melngailis, J
Berry, IL
Citation: W. Wang et al., Fabrication and characterization of buried subchannel implant n-metal-oxide-semiconductor transistors, J VAC SCI B, 16(6), 1998, pp. 3812-3816
Authors:
Stanishevsky, A
Aggarwal, S
Prakash, AS
Melngailis, J
Ramesh, R
Citation: A. Stanishevsky et al., Focused ion-beam patterning of nanoscale ferroelectric capacitors, J VAC SCI B, 16(6), 1998, pp. 3899-3902
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1-14
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