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Results: 1-10 |
Results: 10

Authors: Mereuta, A Saint-Girons, G Bouchoule, S Sagnes, I Alexandre, F Le Roux, G Decobert, J Ougazzaden, A
Citation: A. Mereuta et al., (InGa)(NAs)/GaAs structures emitting in 1-1.6 mu m wavelength range, OPT MATER, 17(1-2), 2001, pp. 185-188

Authors: Saint-Girons, G Mereuta, A Patriarche, G Gerard, JM Sagnes, I
Citation: G. Saint-girons et al., Influence of the thermal treatment on the optical and structural properties of 1.3 mu m emitting LP-MOVPE grown InAs/CaAs quantum dots, OPT MATER, 17(1-2), 2001, pp. 263-266

Authors: Sagnes, I Le Roux, G Meriadec, C Mereuta, A Saint-Girons, G Bensoussan, M
Citation: I. Sagnes et al., MOCVD InP/AlGalnAs distributed Bragg reflector for 1.55 mu m VCSELs, ELECTR LETT, 37(8), 2001, pp. 500-501

Authors: Saint-Girons, G Patriarche, G Largeau, L Coelho, J Mereuta, A Moison, JM Gerard, JM Sagnes, I
Citation: G. Saint-girons et al., Bimodal distribution of Indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots, APPL PHYS L, 79(14), 2001, pp. 2157-2159

Authors: Saint-Girons, G Mereuta, A Gerard, JM Ramdane, A Sagnes, I
Citation: G. Saint-girons et al., 1.3 mu m electroluminescence of LP-MOVPE grown InAs/GaAs quantum dots, andinfluence of the re-growth temperature on the spectral response, MAT SCI E B, 78(2-3), 2000, pp. 145-147

Authors: Patriarche, G Glas, F Le Roux, G Largeau, L Mereuta, A Ougazzaden, A Benchimol, JL
Citation: G. Patriarche et al., TEM study of the morphological and compositional instabilities of InGaAsP epitaxial structures, J CRYST GR, 221, 2000, pp. 12-19

Authors: Mereuta, A Bouchoule, S Alexandre, F Sagnes, I Decobert, J Ougazzaden, A
Citation: A. Mereuta et al., Performance comparison of strained InGaNAs/GaAs and InGaAs/GaAs QW laser diodes grown by MOVPE, ELECTR LETT, 36(5), 2000, pp. 436-437

Authors: Lupu, A Sik, H Mereuta, A Boulet, P Carre, M Slempkes, S Ougazzaden, A Carenco, A
Citation: A. Lupu et al., Three-waveguide two-grating codirectional coupler for 1.3(-)/1.3(+)/1.5 mum demultiplexing in transceiver, ELECTR LETT, 36(24), 2000, pp. 2030-2032

Authors: Ougazzaden, A Bouchoule, S Mereuta, A Rao, EVK Decobert, J
Citation: A. Ougazzaden et al., Room temperature laser operation of bulk InGaAsN/GaAs structures grown by AP-MOVPE using N-2 as carrier gas, ELECTR LETT, 35(6), 1999, pp. 474-475

Authors: Rozenman, Y Mereuta, A Schechter, D Mosseri, M Lotan, C Nassar, H Weiss, AT Hasin, Y Chisin, R Gotsman, MS
Citation: Y. Rozenman et al., Long-term outcome of patients with very long stents for treatment of diffuse coronary disease, AM HEART J, 138(3), 1999, pp. 441-445
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