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Results:
1-9
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Results: 9
Authors:
Salame, C
Mialhe, P
Charles, JP
Citation: C. Salame et al., VDMOSFET model parameter extraction based on electrical and optical measurements, MICROELEC J, 32(7), 2001, pp. 599-603
Authors:
Salame, C
Hoffmann, A
Mialhe, P
Charles, JP
Kerns, DV
Kerns, SE
Citation: C. Salame et al., Size effect on SEB cross-section of VDMOSFETs, RADIAT EFF, 152(3), 2000, pp. 191-200
Authors:
Azar, B
de la Bardonnie, M
Farah, J
Khoury, A
Pelanchon, F
Mialhe, P
Citation: B. Azar et al., Determination of the interfacial dynamic velocity in silicon solar cells, SOL EN MAT, 63(2), 2000, pp. 101-115
Authors:
El-Tahchi, M
Khoury, A
De Labardonnie, M
Mialhe, P
Pelanchon, F
Citation: M. El-tahchi et al., Degradation of the diode ideality factor of silicon n-p junctions, SOL EN MAT, 62(4), 2000, pp. 393-398
Authors:
de la Bardonnie, M
Toufik, N
El-Tahchi, M
Pelanchon, F
Mialhe, P
Citation: M. De La Bardonnie et al., Effects of low dimensions on junction parameters of MOS devices, MAT SCI E B, 74(1-3), 2000, pp. 286-288
Authors:
de la Bardonnie, M
Toufik, N
Salame, C
Dib, S
Mialhe, P
Hoffmann, A
Charles, JP
Citation: M. De La Bardonnie et al., Junction parameters for silicon devices characterization, MICROEL REL, 39(6-7), 1999, pp. 751-753
Authors:
Kerns, S
Jiang, D
de la Bardonnie, M
Pelanchon, F
Barnaby, H
Kerns, DV
Schrimpf, RD
Bhuva, BL
Mialhe, P
Hoffmann, A
Charles, JP
Citation: S. Kerns et al., Light emission studies of total dose and hot carrier effects on silicon junctions, IEEE NUCL S, 46(6), 1999, pp. 1804-1808
Authors:
de la Bardonnie, M
Jiang, D
Kerns, SE
Kerns, DV
Mialhe, P
Charles, JP
Hoffman, A
Citation: M. De La Bardonnie et al., On the aging of avalanche light emission from silicon junctions, IEEE DEVICE, 46(6), 1999, pp. 1234-1239
Authors:
Bendada, E
Rais, K
Mialhe, P
Citation: E. Bendada et al., Characterization of annealing of Co-60 Gamma-ray damage in N-channel powerMOSFETs, RADIAT EFF, 143(3), 1998, pp. 247-254
Risultati:
1-9
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