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Results:
1-9
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Results: 9
VDMOSFET model parameter extraction based on electrical and optical measurements
Authors:
Salame, C Mialhe, P Charles, JP
Citation:
C. Salame et al., VDMOSFET model parameter extraction based on electrical and optical measurements, MICROELEC J, 32(7), 2001, pp. 599-603
Size effect on SEB cross-section of VDMOSFETs
Authors:
Salame, C Hoffmann, A Mialhe, P Charles, JP Kerns, DV Kerns, SE
Citation:
C. Salame et al., Size effect on SEB cross-section of VDMOSFETs, RADIAT EFF, 152(3), 2000, pp. 191-200
Determination of the interfacial dynamic velocity in silicon solar cells
Authors:
Azar, B de la Bardonnie, M Farah, J Khoury, A Pelanchon, F Mialhe, P
Citation:
B. Azar et al., Determination of the interfacial dynamic velocity in silicon solar cells, SOL EN MAT, 63(2), 2000, pp. 101-115
Degradation of the diode ideality factor of silicon n-p junctions
Authors:
El-Tahchi, M Khoury, A De Labardonnie, M Mialhe, P Pelanchon, F
Citation:
M. El-tahchi et al., Degradation of the diode ideality factor of silicon n-p junctions, SOL EN MAT, 62(4), 2000, pp. 393-398
Effects of low dimensions on junction parameters of MOS devices
Authors:
de la Bardonnie, M Toufik, N El-Tahchi, M Pelanchon, F Mialhe, P
Citation:
M. De La Bardonnie et al., Effects of low dimensions on junction parameters of MOS devices, MAT SCI E B, 74(1-3), 2000, pp. 286-288
Junction parameters for silicon devices characterization
Authors:
de la Bardonnie, M Toufik, N Salame, C Dib, S Mialhe, P Hoffmann, A Charles, JP
Citation:
M. De La Bardonnie et al., Junction parameters for silicon devices characterization, MICROEL REL, 39(6-7), 1999, pp. 751-753
Light emission studies of total dose and hot carrier effects on silicon junctions
Authors:
Kerns, S Jiang, D de la Bardonnie, M Pelanchon, F Barnaby, H Kerns, DV Schrimpf, RD Bhuva, BL Mialhe, P Hoffmann, A Charles, JP
Citation:
S. Kerns et al., Light emission studies of total dose and hot carrier effects on silicon junctions, IEEE NUCL S, 46(6), 1999, pp. 1804-1808
On the aging of avalanche light emission from silicon junctions
Authors:
de la Bardonnie, M Jiang, D Kerns, SE Kerns, DV Mialhe, P Charles, JP Hoffman, A
Citation:
M. De La Bardonnie et al., On the aging of avalanche light emission from silicon junctions, IEEE DEVICE, 46(6), 1999, pp. 1234-1239
Characterization of annealing of Co-60 Gamma-ray damage in N-channel powerMOSFETs
Authors:
Bendada, E Rais, K Mialhe, P
Citation:
E. Bendada et al., Characterization of annealing of Co-60 Gamma-ray damage in N-channel powerMOSFETs, RADIAT EFF, 143(3), 1998, pp. 247-254
Risultati:
1-9
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